MJE13002 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data





 

 

  !  

These devices are designed for high–voltage, high–speed power switching

inductive circuits where fall time is critical. They are particularly suited for 115 and

220 V SWITCHMODE applications such as Switching Regulators, Inverters, Motor

Controls, Solenoid/Relay drivers and Deflection circuits.

SPECIFICATION FEATURES:

•Reverse Biased SOA with Inductive Loads @ TC = 100

•Inductive Switching Matrix 0.5 to 1.5 Amp, 25 and 100

...tc @ 1 A, 100

C is 290 ns (Typ).

•700 V Blocking Capability

•SOA and Switching Applications Information.

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

MJE13002

ÎÎÎÎÎÎ

MJE13003

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎ

300

ÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎ

VCEV

ÎÎÎÎÎÎ

600

ÎÎÎÎÎÎ

700

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎÎÎÎ

1.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎÎ

IBM

ÎÎÎÎÎÎÎÎÎÎÎ

0.75

1.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Current — Continuous

— Peak (1)

ÎÎÎÎÎÎ

IEM

ÎÎÎÎÎÎÎÎÎÎÎ

2.25

4.5

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TA = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

1.4

11.2

ÎÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

320

ÎÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎÎÎÎÎÎ

3.12

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient

ÎÎÎÎÎÎ

RθJA

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Load Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

275

ÎÎÎÎ

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

10%.

Designer’s Data for “W orst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Preferred devices are Motorola recommended choices for future use and best overall value.

Designer’s and SWITCHMODE are trademarks of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJE13002/D

 Motorola, Inc. 1995





1.5 AMPERE

NPN SILICON

POWER TRANSISTORS

300 AND 400 VOLTS

40 WATTS

*Motorola Preferred Device



CASE 77–08

TO–225AA TYPE

REV 4

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 10 mA, IB = 0) MJE13002

MJE13003

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

300

400

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 100

ÎÎÎÎ

ICEV

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 9 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with bass forward biased

ÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎ

See Figure 11

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Clamped Inductive SOA with base reverse biased

ÎÎÎÎ

RBSOA

ÎÎÎÎÎÎÎÎÎÎ

See Figure 12

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.5 Adc, VCE = 2 Vdc)

(IC = 1 Adc, VCE = 2 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 0.5 Adc, IB = 0.1 Adc)

(IC = 1 Adc, IB = 0.25 Adc)

(IC = 1.5 Adc, IB = 0.5 Adc)

(IC = 1 Adc, IB = 0.25 Adc, TC = 100

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 0.5 Adc, IB = 0.1 Adc)

(IC = 1 Adc, IB = 0.25 Adc)

(IC = 1 Adc, IB = 0.25 Adc, TC = 100

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.2

1.1

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 100 mAdc, VCE = 10 Vdc, f = 1 MHz)

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 125 Vdc, IC = 1 A,

IB1 = IB2 = 0.2 A, tp = 25 µs,

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.05

ÎÎÎÎ

0.1

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 125 Vdc, IC = 1 A,

IB1 = IB2 = 0.2 A, tp = 25 µs,

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = IB2 = 0.2 A, tp = 25 µs,

Duty Cycle

1%)

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

1%)

ÎÎÎÎ

—

ÎÎÎÎ

0.4

ÎÎÎÎ

0.7

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load, Clamped (Table 1, Figure 13)

ÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 A, Vclamp = 300 Vdc,

IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎÎ

1.7

ÎÎÎÎ

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 1 A, Vclamp = 300 Vdc,

IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

—

ÎÎÎÎ

0.29

ÎÎÎÎ

0.75

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = 0.2 A, VBE(off) = 5 Vdc, TC = 100

ÎÎÎÎ

tfi

ÎÎÎÎ

—

ÎÎÎÎ

0.15

ÎÎÎÎ

—

ÎÎÎ

µs

(1) Pulse Test: PW = 300 µs, Duty Cycle

2%.

 

Motorola Bipolar Power Transistor Device Data

C, CAPACITANCE (pF) VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02

IC, COLLECTOR CURRENT (AMP)

0.35

0.3

0.2

1.4

IC, COLLECTOR CURRENT (AMP)

1.2

0.8

0.6

0.02

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

40.05 0.1 0.7 2

Figure 2. Collector Saturation Region

0.01 IB, BASE CURRENT (AMP)

0.02 0.05

1.2

0.4

hFE, DC CURRENT GAIN

VCE = 2 V

VCE = 5 V

0.1 0.2 0.5 1

Figure 3. Base–Emitter Voltage Figure 4. Collector–Emitter Saturation Region

Figure 5. Collector Cutoff Region

0.8

104

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10–1 0

TJ = 25

TJ = 150

0.07 0.3

–0.4

Figure 6. Capacitance

500

VR, REVERSE VOLTAGE (VOLTS)

Cib

0.1

, COLLECTOR CURRENT ( A)

0.05

103

102

101

100

–0.2 +0.2 +0.4 +0.6

REVERSE FORWARD

VCE = 250 V

2 20 500 1000

1.6

0.0050.002

0.4 0

0.1

–55

0.3 A

IC = 0.1 A

TJ = –55

0.03 0.2 0.5 1 2

0.03 0.1 0.70.07 20.02 0.05 0.30.2 0.5 1

0.15

0.25

1 A

VBE(sat) @ IC/IB = 3

VBE(on) @ VCE = 2 V

300

200

100

2001005010510.50.2

150

0.03 0.1 0.70.07 20.05 0.30.2 0.5 1

V, VOLTAGE (VOLTS)

IC/IB = 3

0.5 A 1.5 A

Cob

TJ = –55

150

TJ = 150

125

100

TJ = 25

 

4 Motorola Bipolar Power Transistor Device Data

REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING RESISTIVE

SWITCHING

OUTPUT WAVEFORMS

TEST CIRCUITS

CIRCUIT

VALUES

TEST WAVEFORMS

NOTE

PW and VCC Adjusted for Desired IC

RB Adjusted for Desired IB1

5 V

DUTY CYCLE

≤

10%

tr, tf

≤

10 ns 68 1 k

0.001

0.02

1N4933

270

+5 V

1 k 2N2905

1/2 W 100 –VBE(off)

MJE200

T.U.T.

1N4933

1N4933 33

2N2222

1 k

MJE210

VCC

+5 V

MR826*

Vclamp

*SELECTED FOR

≥

1 kV

VCE

5.1 k

+125 V

SCOPE

–4.0 V

RBTUT

Coil Data:

Ferroxcube Core #6656

Full Bobbin (~200 Turns) #20

GAP for 30 mH/2 A

Lcoil = 50 mH VCC = 20 V

Vclamp = 300 Vdc

VCC = 125 V

RC = 125

Ω

D1 = 1N5820 or Equiv.

RB = 47

Ω

VCE

IC(pk) t

tf CLAMPED

t1 Adjusted to

Obtain IC

≈

Lcoil (ICpk)

VCC

≈

Lcoil (ICpk)

Vclamp

Test Equipment

Scope–Tektronics

475 or Equivalent

+10.3 V 25

–8.5 V

tr, tf < 10 ns

Duty Cycle = 1.0%

RB and RC adjusted

for desired IB and IC

VCE or

Vclamp

TIME

t1tf

Table 1. Test Conditions for Dynamic Performance

trv

TIME

VCE 90% IB1

tsv

ICPK Vclamp

90% Vclamp 90% IC

10% Vclamp 10%

ICPK 2% IC

tfi tti

Figure 7. Inductive Switching Measurements

Table 2. Typical Inductive Switching Performance

ÎÎÎ

AMP

ÎÎÎ

tsv

µs

ÎÎÎ

trv

µs

ÎÎÎÎ

tfi

µs

ÎÎÎ

tti

µs

ÎÎÎ

µs

ÎÎÎ

0.5

ÎÎÎ

100

ÎÎÎ

1.3

1.6

ÎÎÎ

0.23

0.26

ÎÎÎÎ

0.30

ÎÎÎ

0.35

0.40

ÎÎÎ

0.30

0.36

ÎÎÎ

100

ÎÎÎ

1.5

1.7

ÎÎÎ

0.10

0.13

ÎÎÎÎ

0.14

0.26

ÎÎÎ

0.05

0.06

ÎÎÎ

0.16

0.29

ÎÎÎ

1.5

ÎÎÎ

100

ÎÎÎ

1.8

ÎÎÎ

0.07

0.08

ÎÎÎÎ

0.10

0.22

ÎÎÎ

0.05

0.08

ÎÎÎ

0.16

0.28

NOTE: All Data Recorded in the Inductive Switching Circuit in Table 1

 

Motorola Bipolar Power Transistor Device Data

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power supplies

and hammer drivers, current and voltage waveforms are not

in phase. Therefore, separate measurements must be made

on each waveform to determine the total switching time. For

this reason, the following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC

tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the inductive switching waveforms is

shown in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained us-

ing the standard equation from AN–222:

PSWT = 1/2 VCCIC(tc)f

In general, trv + tfi

]

tc. However, at lower test currents this

relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified at 25

C and has become a benchmark

for designers. However, for designers of high frequency con-

verter circuits, the user oriented specifications which make

this a “SWITCHMODE” transistor are the inductive switching

speeds (tc and tsv) which are guaranteed at 100

t, TIME ( s)

t, TIME OR PULSE WIDTH (ms)

0.01 0.02

0.7

0.2

0.1

0.05

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

0.05 1 2 5 10 20 50 100 200 500

JC(t) = r(t) R

JC = 3.12

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.1 0.50.2

RESISTANCE (NORMALIZED)

1000

0.5

0.3

0.07

0.03

0.03 0.3 3

IC, COLLECTOR CURRENT (AMP)

0.02 0.2 10.1

0.5 20.05 0.7

td @ VBE(off) = 5 V

Figure 8. Turn–On Time Figure 9. Turn–Off Time

0.1

0.7

0.5

0.3

0.2

Figure 10. Thermal Response

0.03

0.02

0.5

0.3

0.7

0.2

IC, COLLECTOR CURRENT (AMP)

0.1 0.5 200.3 0.70.02 0.2 10

VCC = 125 V

IC/IB = 5

TJ = 25

0.07

0.05

0.07

0.1

7VCC = 125 V

IC/IB = 5

TJ = 25

0.03 0.07 0.30.050.03

0.01

RESISTIVE SWITCHING PERFORMANCE

 

6 Motorola Bipolar Power Transistor Device Data

The Safe Operating Area figures shown in Figures 1 1 and 12 are

specified ratings for these devices under the test conditions

shown.

IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)

1.6

0800

0.4

100 300

≤

100

IB1 = 1 A

500 700

VBE(off) = 9 V

0.8

VCEV, COLLECTOR–EMITTER CLAMP VOLTAGE (VOLTS)

1.2

100

s10

1.0 ms

5VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.01 10 500

0.5

0.2

0.05

0.02

20 50 100 200

Figure 11. Active Region Safe Operating Area

TC = 25

Figure 12. Reverse Bias Safe Operating Area

0.1

300

200 400 600

5 V

1.5 V

5.0 ms

MJE13002

MJE13003

MJE13002 MJE13003

3 V

THERMAL LIMIT (SINGLE PULSE)

BONDING WIRE LIMIT

SECOND BREAKDOWN LIMIT

CURVES APPLY BELOW RATED VCEO

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 11 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown pulse

limits are valid for duty cycles to 10% but must be derated

when TC ≥ 25

C. Second breakdown limitations do not der-

ate the same as thermal limitations. Allowable current at the

voltages shown on Figure 11 may be found at any case tem-

perature by using the appropriate curve on Figure 13.

TJ(pk) may be calculated from the data in Figure 10. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases, with

the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished by several means such as active clamping,

RC snubbing, load line shaping, etc. The safe level for these

devices is specified as Reverse Bias Safe Operating Area

and represents the voltage–current conditions during re-

verse biased turn–off. This rating is verified under clamped

conditions so that the device is never subjected to an ava-

lanche mode. Figure 12 gives RBSOA characteristics.

TC, CASE TEMPERATURE (

040 120 160

0.6

POWER DERATING FACTOR

SECOND BREAKDOWN

DERATING

0.8

0.4

0.2

60 100 14080

THERMAL

DERATING

Figure 13. Forward Bias Power Derating

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 3:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

 

8 Motorola Bipolar Power Transistor Device Data

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