2007-03-29
1
BCV29, BCV49
1
2
2
3
NPN Silicon Darlington Transistors
• For general AF applications
• High collector current
• High current gain
• Complementary types: BCV28, BCV48 (PNP)
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
Type Marking Pin Configuration Package
BCV29
BCV49 EF
EG 1=B
1=B 2=C
2=C 3=E
3=E SOT89
SOT89
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage
BCV29
BCV49
VCEO
30
60
V
Collector-base voltage
BCV29
BCV49
VCBO
40
80
Emitter-base voltage VEBO 10
Collector current IC500 mA
Peak collector current ICM 800
Base current IB100
Peak base current IBM 200
Total power dissipation-
TS ≤ 130 °C Ptot 1 W
Junction temperature Tj150 °C
Storage temperature Tstg -65 ... 150
1Pb-containing package may be available upon special request
2007-03-29
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BCV29, BCV49
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS ≤ 20 K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-03-29
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BCV29, BCV49
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BCV29
IC = 10 mA, IB = 0 , BCV49
V(BR)CEO
30
60
-
-
-
-
V
Collector-base breakdown voltage
IC = 100 µA, IE = 0 , BCV29
IC = 100 µA, IE = 0 , BCV49
V(BR)CBO
40
80
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0 V(BR)EBO 10 - -
Collector-base cutoff current
VCB = 30 V, IE = 0 , BCV29
VCB = 60 V, IE = 0 , BCV49
VCB = 30 V, IE = 0 , TA = 150 °C, BCV29
VCB = 60 V, IE = 0 , TA = 150 °C, BCV49
ICBO
-
-
-
-
-
-
-
-
0.1
0.1
10
10
µA
Emitter-base cutoff current
VEB = 4 V, IC = 0 IEBO - - 100 nA
DC current gain1)
IC = 100 µA, VCE = 1 V, BCV29
IC = 100 µA, VCE = 1 V, BCV49
IC = 10 mA, VCE = 5 V, BCV29
IC = 10 mA, VCE = 5 V, BCV49
IC = 100 mA, VCE = 5 V, BCV29
IC = 100 mA, VCE = 5 V, BCV49
IC = 0.5 A, VCE = 5 V, BCV29
IC = 0.5 A, VCE = 5 V, BCV49
hFE
4000
2000
10000
4000
20000
10000
4000
2000
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA VCEsat - - 1 V
Base emitter saturation voltage1)
IC = 100 mA, IB = 0.1 mA VBEsat - - 1.5
1Pulse test: t < 300µs; D < 2%
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BCV29, BCV49
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz fT- 150 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz Ccb - 3 - pF
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BCV29, BCV49
DC current gain hFE = ƒ(IC)
VCE = 5 V
10
EHP00325BCV 29/49
-1 3
10mA
3
10
6
10
5
5
10
0
10
1
10
4
C
FE
h
Ι
2
10
5
10 ˚C
125
5
25
˚C
-55
˚C
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 1000
0
10
EHP00322BCV 29/49
CEsat
V
1.5
0
3
10
Ι
C
mA
0.5 1.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 1000
0
10
EHP00323BCV 29/49
BEsat
V
3.0
0
3
10
Ι
CmA
1.0 2.0
1
10
2
10
˚C
V
5
5
150
25
˚C
-50
˚C
Collector cutoff current ICBO = ƒ(TA)
VCB = VCEmax
0
10
EHP00318BCV 29/49
A
T
150
0
4
10
Ι
CBO
nA
50 100
1
10
2
10
3
10
˚C
max
typ
2007-03-29
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BCV29, BCV49
Transition frequency fT = ƒ(IC)
VCE = 5 V
10
EHP00321BCV 29/49
03
10mA
1
10
3
10
5
10
1
10
2
10
2
C
T
fMHz
Ι
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
0 4 8 12 16 V22
VCB/VEB
1
3
5
7
9
11
13
15
pF
19
CCB/CEB
CCB
CEB
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
200
400
600
800
mW
1200
Ptot
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10
EHP00319BCV 29/49
-6 -5
10 0
10s
0
10
2
10
5
5
10-4 10-3 10-2
101
5
0
0.5
0.2
0.1
0.05
0.02
0.01
0.005
=
D
totmax
tot
PDC
P
p
t
t
p
=
DT
t
p
T
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BCV29, BCV49
Package SOT89
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
0.8
0.8
2.0
1.01.2 2.5
0.7
0.45 +0.2
1) Ejector pin markings possible
1.5
30.2
-0.1
B
0.25
1)
±0.05 45˚
0.15
2.5
±0.1
4
±0.25
MB
B
0.15
±0.1
0.35
±0.2
1MAX.
10˚
1.5±0.1
±0.2
1.6
-0.15
+0.1
2.75
±0.1
4.5
±0.1
1
x3
0.2 MAX.1)
123
80.2
4.3 1.6
4.6
12
Pin 1
2005, June
Date code (YM)
BAW78D
Type code
Pin 1
Manufacturer
2007-03-29
8
BCV29, BCV49
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
