MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE CM200DU-24NFH IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM TC measured point 108 (7.5) Dimensions in mm (7.5) 93 0.25 14 14 E2 G2 14 E2 25 17.5 6 G1 E1 62 48 0.25 15 25 CIRCUIT DIAGRAM (7) 8.85 C1 E2 C1 6 E2 G2 G1 E1 CM C2E1 21.5 2.5 3-M6 NUTS 25.7 4-6. 5 MOUNTING HOLES 4 18 2.8 29 LABEL 0.5 0.5 4 7 8.5 18 0.5 22 7 0.5 7.5 18 +1.0 -0.5 (18) (8.25) C2E1 Feb. 2009 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC' (Note 3) Tj Tstg Viso -- -- -- (Tj = 25C, unless otherwise specified) Parameter Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight ELECTRICAL CHARACTERISTICS Symbol Conditions Collector-emitter voltage Gate-emitter voltage G-E Short C-E Short Operation Pulse Operation Pulse TC = 25C TC' = 25C*4 Ratings 1200 20 200 400 200 400 830 1300 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Unit V V A A A A W W C C Vrms N*m N*m g (Tj = 25C, unless otherwise specified) Test conditions Parameter Limits Typ. -- Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. -- VGE(th) Gate-emitter threshold voltage IC = 20mA, VCE = 10V 4.5 6 7.5 V IGES Gate leakage current VGE = VGES, VCE = 0V -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6 -- 5.0 5.0 -- -- -- 900 -- -- -- -- -- 7.5 -- -- -- 0.04 -- -- -- 0.7 6.5 -- 32 2.7 0.6 -- 300 80 500 150 250 -- 3.5 0.15 0.24 -- A VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c')Q Rth(j-c')R RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 Tj = 25C Tj = 125C IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = 15V RG = 1.6, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) External gate resistance mA V nF nF nF nC ns ns ns ns ns 0.095*3 0.14*3 16 C V K/W K/W K/W K/W K/W *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC') measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 400 14 VCE = 10V COLLECTOR CURRENT IC (A) 13 15 12 300 250 11 200 150 10 100 9 50 8 0 2 4 6 8 350 300 250 200 150 100 50 0 10 Tj = 25C Tj = 125C 0 5 10 15 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 9 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) VGE=20 (V) 350 0 VGE = 15V 8 Tj = 25C Tj = 125C 7 6 5 4 3 2 1 0 EMITTER CURRENT IE (A) Tj = 25C 0 10 IC = 200A 4 IC = 80A 2 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE CHARACTERISTICS (TYPICAL) 102 7 5 7 5 Tj = 125C 3 Tj = 25C 2 102 7 5 3 2 0 IC = 400A 6 103 101 Tj = 25C 8 0 50 100 150 200 250 300 350 400 CAPACITANCE Cies, Coes, Cres (nF) COLLECTOR CURRENT IC (A) 400 1 2 3 4 5 3 2 Cies 101 7 5 3 2 Coes 100 7 5 3 2 Cres VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM200DU-24NFH HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) REVERSE RECOVERY TIME trr (ns) 103 SWITCHING TIME (ns) 7 5 3 2 td(off) td(on) 102 7 5 tr tf 3 2 101 7 5 3 2 100 1 10 2 3 5 7 102 Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 2 3 5 7 103 5 5 3 3 Irr 2 102 7 5 3 2 101 1 10 2 3 5 7 102 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 7 5 3 2 Single Pulse TC = 25C 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 7 5 3 Per unit base = 2 7 5 3 2 Rth(j-c) = 0.15K/W 10-3 2 102 trr 7 Conditions: 5 VCC = 600V VGE = 15V 3 RG = 1.6 2 Tj = 25C Inductive load 101 2 3 5 7 103 COLLECTOR CURRENT IC (A) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25C 7 7 REVERSE RECOVERY CURRENT Irr (A) HIGH POWER SWITCHING USE 7 5 3 2 Single Pulse TC = 25C 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 7 5 3 Per unit base = 2 Rth(j-c) = 0.24K/W 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 7 5 3 2 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 200A 15 VCC = 400V VCC = 600V 10 5 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 4