2N4401RLRAG - ON SEMICONDUCTOR

February, 2010 − Rev. 4

1Publication Order Number:

2N4401/D

2N4401

General Purpose

Transistors

NPN Silicon

Features

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector − Emitter Voltage VCEO 40 Vdc

Collector − Base Voltage VCBO 60 Vdc

Emitter − Base Voltage VEBO 6.0 Vdc

Collector Current − Continuous IC600 mAdc

Total Device Dissipation

@ TA = 25°C

Derate above 25°C

PD625

5.0

mW/°C

Total Device Dissipation

@ TC = 25°C

Derate above 25°C

PD1.5

mW/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg −55 to

+150

°C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W

Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques Reference

Manual, SOLDERRM/D.

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

COLLECTOR

BASE

EMITTER

MARKING DIAGRAM

4401

AYWW G

2N4401 = Device Code

A = Assembly Location

Y = Year

WW = Work Week

G= Pb−Free Package

(Note: Microdot may be in either location)

123

BENT LEAD

TAPE & REEL

AMMO PACK

STRAIGHT LEAD

BULK PACK

TO−92

CASE 29

STYLE 1

2N4401

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 −Vdc

Collector−Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) V(BR)CBO 60 −Vdc

Emitter−Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) V(BR)EBO 6.0 −Vdc

Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) IBEV −0.1 mAdc

Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) ICEX −0.1 mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 150 mAdc, VCE = 1.0 Vdc)

(IC = 500 mAdc, VCE = 2.0 Vdc)

hFE 20

100

−

300

−

Collector−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VCE(sat) −

−

0.4

0.75

Vdc

Base−Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc)

(IC = 500 mAdc, IB = 50 mAdc)

VBE(sat) 0.75

−

0.95

1.2

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) fT250 −MHz

Collector−Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Ccb −6.5 pF

Emitter−Base Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Ceb −30 pF

Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hie 1.0 15 k W

Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hre 0.1 8.0 X 10−4

Small−Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hfe 40 500 −

Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) hoe 1.0 30 mmhos

SWITCHING CHARACTERISTICS

Delay Time (VCC = 30 Vdc, VBE = 2.0 Vdc,

IC = 150 mAdc, IB1 = 15 mAdc)

td−15 ns

Rise Time tr−20 ns

Storage Time (VCC = 30 Vdc, IC = 150 mAdc,

IB1 = IB2 = 15 mAdc)

ts−225 ns

Fall Time tf−30 ns

1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%.

ORDERING INFORMATION

Device Package Shipping†

2N4401 TO−92 5000 Units / Bulk

2N4401G TO−92

(Pb−Free)

5000 Units / Bulk

2N4401RLRA TO−92 2000 / Tape & Reel

2N4401RLRAG TO−92

(Pb−Free)

2000 / Tape & Reel

2N4401RLRMG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

2N4401RLRP TO−92 2000 / Tape & Ammo Box

2N4401RLRPG TO−92

(Pb−Free)

2000 / Tape & Ammo Box

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

2N4401

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Figure 1. Turn−On Time Figure 2. Turn−Off Time

SWITCHING TIME EQUIVALENT TEST CIRCUITS

Scope rise time < 4.0 ns

*Total shunt capacitance of test jig connectors, and oscilloscope

+16 V

-2.0 V < 2.0 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1.0 kW

+30 V

200 W

CS* < 10 pF

+16 V

-14 V

< 20 ns

1.0 to 100 ms,

DUTY CYCLE ≈ 2.0%

1.0 kW

+30 V

200 W

CS* < 10 pF

-4.0 V

Figure 3. Capacitances

REVERSE VOLTAGE (VOLTS)

7.0

5.0

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

0.1 2.0 5.0 10 20

2.0

30 50

CAPACITANCE (pF)

Q, CHARGE (nC)

3.0

2.0

3.0

5.0

7.0

1.0

10 20 50 70 100 200

0.1 300 500

0.7

0.5

VCC = 30 V

IC/IB = 10

Cobo QT

25°C 100°C

TRANSIENT CHARACTERISTICS

3.01.00.50.30.2

0.3

0.2

Ccb

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT (mA)

5.0

7.0

Figure 6. Rise and Fall Times

IC, COLLECTOR CURRENT (mA)

t, TIME (ns)

100

10 20 50 70 100 200 300 50030

IC/IB = 10

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VEB = 2.0 V

td @ VEB = 0 20

5.0

7.0

100

10 20 50 70 100 200 300 50030

VCC = 30 V

IC/IB = 10

2N4401

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Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

100

5.0

7.0

ts, STORAGE TIME (ns)′

tf, FALL TIME (ns)

10 20 50 70 100 200 300 50030

100

200

300

10 20 50 70 100 200 300 50030

ts′ = ts - 1/8 tf

IB1 = IB2

IC/IB = 10 to 20

VCC = 30 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

6.0

8.0

4.0

2.0

0.1 2.0 5.0 10 20 501.00.50.20.01 0.02 0.05 100

Figure 9. Frequency Effects

f, FREQUENCY (kHz)

SMALL−SIGNAL CHARACTERISTICS

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C; Bandwidth = 1.0 Hz

NF, NOISE FIGURE (dB)

IC = 1.0 mA, RS = 150 W

IC = 500 mA, RS = 200 W

IC = 100 mA, RS = 2.0 kW

IC = 50 mA, RS = 4.0 kW

RS = OPTIMUM

RS = SOURCE

RS = RESISTANCE

100k50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k

6.0

8.0

4.0

2.0

NF, NOISE FIGURE (dB)

Figure 10. Source Resistance Effects

RS, SOURCE RESISTANCE (OHMS)

f = 1.0 kHz

IC = 50 mA

IC = 100 mA

IC = 500 mA

IC = 1.0 mA

2N4401

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h PARAMETERS

VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C

This group of graphs illustrates the relationship between

hfe and other “h” parameters for this series of transistors. To

obtain these curves, a high−gain and a low−gain unit were

selected from the 2N4401 lines, and the same units were

used to develop the correspondingly numbered curves on

each graph.

Figure 11. Current Gain

IC, COLLECTOR CURRENT (mA)

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3

100

200

300

hfe, CURRENT GAIN

hie, INPUT IMPEDANCE (OHMS)

Figure 12. Input Impedance

IC, COLLECTOR CURRENT (mA)

50k

500

5.0 7.0

20k

10k

5.0k

2.0k

1.0k

0.1 0.2 0.5 0.7 1.0 2.0 3.0 100.3 5.0 7.0

Figure 13. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3

0.2

Figure 14. Output Admittance

IC, COLLECTOR CURRENT (mA)

100

1.0

5.0 7.0

5.0

2.0

7.0

5.0

3.0

2.0

1.0

0.7

0.5

0.3

h , OUTPUT ADMITTANCE ( mhos)

h , VOLTAGE FEEDBACK RATIO (X 10 )

-4

2N4401 UNIT 1

2N4401 UNIT 2

2N4401 UNIT 1

2N4401 UNIT 2

2N4401 UNIT 1

2N4401 UNIT 2

2N4401 UNIT 1

2N4401 UNIT 2

0.1 0.2 0.5 0.7 1.0 2.0 3.0 10

0.3 5.0 7.0

2N4401

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STATIC CHARACTERISTICS

Figure 15. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 16. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 500.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 100 mA

10 20 30

500 mA

0.3

0.5

0.7

1.0

3.0

0.1

h , NORMALIZED CURRENT GAIN

0.5 2.0 3.0 10 50 700.2 0.3

0.2

1001.00.7 50030205.0 7.0

TJ = 125°C

-55°C

2.0

200 300

25°C

VCE = 1.0 V

VCE = 10 V

Figure 17. “On” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

100

-0.5

+0.5

-1.0

-1.5

-2.0

500

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

qVC for VCE(sat)

qVB for VBE

200

0.1 0.2 0.5

COEFFICIENT (mV/ C)°

-2.5 1.0 2.0 5.0 10 20 50 100 500200

0.1 0.2 0.5

2N4401

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PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 29−11

ISSUE AM

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.175 0.205 4.45 5.20

B0.170 0.210 4.32 5.33

C0.125 0.165 3.18 4.19

D0.016 0.021 0.407 0.533

G0.045 0.055 1.15 1.39

H0.095 0.105 2.42 2.66

J0.015 0.020 0.39 0.50

K0.500 --- 12.70 ---

L0.250 --- 6.35 ---

N0.080 0.105 2.04 2.66

P--- 0.100 --- 2.54

R0.115 --- 2.93 ---

V0.135 --- 3.43 ---

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION:

MILLIMETERS.

3. CONTOUR OF PACKAGE BEYOND

DIMENSION R IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN

P AND BEYOND DIMENSION K MINIMUM.

SECTION X−X

SEATING

PLANE DIM MIN MAX

MILLIMETERS

A4.45 5.20

B4.32 5.33

C3.18 4.19

D0.40 0.54

G2.40 2.80

J0.39 0.50

K12.70 ---

N2.04 2.66

P1.50 4.00

R2.93 ---

V3.43 ---

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

STYLE 1:

PIN 1. EMITTER

2. BASE

3. COLLECTOR

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2N4401/D

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