PD - 97459 AUTOMOTIVE GRADE AUIRF2804S-7P HEXFET(R) Power MOSFET Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * V(BR)DSS D G S 40V RDS(on) max. 1.6m ID (Silicon Limited) 320A ID (Package Limited) 240A Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. D D SS G S S S G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Absolute Maximum Ratings Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) Parameter 320 A ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 230 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) IDM PD @TC = 25C VGS EAS 240 Pulsed Drain Current c 1360 Maximum Power Dissipation 330 W Linear Derating Factor Gate-to-Source Voltage 2.2 20 W/C V 630 mJ EAS (tested) Single Pulse Avalanche Energy (Thermally Limited) Single Pulse Avalanche Energy Tested Value h c IAR Avalanche Current EAR Repetitive Avalanche Energy TJ Operating Junction and TSTG Storage Temperature Range d 1050 See Fig.12a,12b,15,16 g A mJ -55 to + 175 C 300 Soldering Temperature, for 10 seconds (1.6mm from case ) Thermal Resistance j Parameter RJC Junction-to-Case RCS Case-to-Sink, Flat, Greased Surface RJA Junction-to-Ambient RJA Junction-to-Ambient (PCB Mount, steady state) i Typ. Max. Units --- 0.50 C/W 0.50 --- --- 62 --- 40 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 02/19/2010 AUIRF2804S-7P Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS VDSS/TJ RDS(on) SMD VGS(th) Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage gfs IDSS Forward Transconductance Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 40 --- --- 2.0 220 --- --- --- --- --- 0.028 --- --- 1.2 --- --- --- --- --- --- 1.6 4.0 --- 20 250 200 -200 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 160A V VDS = VGS, ID = 250A S VDS = 10V, ID = 160A A VDS = 40V, VGS = 0V VDS = 40V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V e Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Typ. Max. Units Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 170 63 71 17 150 110 100 4.5 260 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 6930 1750 970 5740 1570 2340 --- --- --- --- --- --- nC ns nH Conditions ID = 160A VDS = 32V VGS = 10V VDD = 20V ID = 160A RG = 2.6 VGS = 10V Between lead, e d D 6mm (0.25in.) from package pF G S and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 32V, = 1.0MHz VGS = 0V, VDS = 0V to 32V Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current --- --- 320 ISM (Body Diode) Pulsed Source Current --- --- 1360 VSD trr Qrr (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge c Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Limited by TJmax, starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. Part not recommended for use above this value. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . 2 A --- --- --- --- 43 48 1.3 65 72 Conditions MOSFET symbol V ns nC D showing the integral reverse G S p-n junction diode. TJ = 25C, IS = 160A, VGS = 0V TJ = 25C, IF = 160A, VDD = 20V di/dt = 100A/s e e Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. This value is determined from sample failure population, starting TJ = 25C, L=0.049mH, RG = 25, IAS = 160A, VGS =10V. This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ of approximately 90C. www.irf.com AUIRF2804S-7P Qualification Information Automotive (per AEC-Q101) Qualification Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. Moisture Sensitivity Level D2Pak 7 Pin Machine Model MSL1 Class M4 AEC-Q101-002 ESD Human Body Model Class H3A AEC-Q101-001 Charged Device Model RoHS Compliant Class C5 AEC-Q101-005 Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF2804S-7P 10000 10000 1000 BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 4.5V 1000 BOTTOM 100 4.5V 60s PULSE WIDTH Tj = 25C 60s PULSE WIDTH Tj = 175C 10 10 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 240 Gfs, Forward Transconductance (S) 1000.0 ID, Drain-to-Source Current() 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100.0 TJ = 175C 10.0 TJ = 25C 1.0 VDS = 20V 60s PULSE WIDTH 0.1 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 8.0 TJ = 25C 200 160 TJ = 175C 120 80 40 VDS = 10V 380s PULSE WIDTH 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance vs. Drain Current www.irf.com ance AUIRF2804S-7P 14000 VGS, Gate-to-Source Voltage (V) 12000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10000 8000 Ciss 6000 4000 Coss 2000 Crss ID= 160A 16 12 8 4 0 0 1 10 0 100 50 100 150 1000.0 10000 ID, Drain-to-Source Current (A) TJ = 175C 100.0 10.0 TJ = 25C 1.0 1000 100sec 100 10 1 1msec Tc = 25C Tj = 175C Single Pulse 10msec DC 0.1 0.1 0.8 1.2 1.6 2.0 VSD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 300 OPERATION IN THIS AREA LIMITED BY R DS (on) VGS = 0V 0.4 250 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 0.0 200 QG Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) ISD , Reverse Drain Current (A) VDS = 32V VDS= 20V 2.4 0 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF2804S-7P 350 ID, Drain Current (A) 300 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 Limited By Package 250 200 150 100 50 ID = 160A VGS = 10V 1.5 1.0 0.5 0 25 50 75 100 125 150 -60 -40 -20 0 175 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) T C , Case Temperature (C) Fig 10. Normalized On-Resistance vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 C 2 1 2 Ri (C/W) 0.1951 0.3050 i (sec) 0.000743 0.008219 Ci= i/Ri Ci i/Ri 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V DRIVER L VDS D.U.T RG VGS 20V + V - DD IAS tp A 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS, Single Pulse Avalanche Energy (mJ) AUIRF2804S-7P 2500 I D 21A 33A BOTTOM 160A TOP 2000 1500 1000 500 0 tp 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms QG 10 V QGS QGD 4.5 VGS(th) Gate threshold Voltage (V) VG Charge Fig 13a. Basic Gate Charge Waveform L DUT 0 1K Fig 13b. Gate Charge Test Circuit www.irf.com VCC 4.0 3.5 3.0 2.5 2.0 ID = 1.0A ID = 1.0mA ID = 250A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) Fig 14. Threshold Voltage vs. Temperature 7 AUIRF2804S-7P 10000 Duty Cycle = Single Pulse Avalanche Current (A) 1000 Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 0.1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 800 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 160A 600 400 200 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy vs. Temperature 8 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f 175 ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF2804S-7P D.U.T Driver Gate Drive + P.W. + - - D.U.T. ISD Waveform Reverse Recovery Current + * dv/dt controlled by RG * Driver same type as D.U.T. * I SD controlled by Duty Factor "D" * D.U.T. - Device Under Test P.W. Period * RG D= VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer Period V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent Ripple 5% * ISD VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V DS V GS RG RD D.U.T. + -V DD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF2804S-7P D2Pak - 7 Pin Package Outline Dimensions are shown in millimeters (inches) D2Pak - 7 Pin Part Marking Information Part Number AUF2804S-7P YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF2804S-7P D2Pak - 7 Pin Tape and Reel IRF2804STRL-7P IRF2804STRL-7P IRF2804STRL-7P Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 11 AUIRF2804S-7P Ordering Information Base part AUIRF2804S-7P 12 Package Type D2Pak 7 Pin Standard Pack Form Tube Complete Part Number Quantity 75 AUIRF2804S-7P www.irf.com AUIRF2804S-7P IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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