2009. 8. 19 1/2
SEMICONDUCTOR
TECHNICAL DATA
MJE13003
TRIPLE DIFFUSED NPN TRANSISTOR
Revision No : 10
SWITCHING REGULATOR APPLICATION.
HIGH VOLTAGE AND HIGH SPEED
SWITCHING APPLICATION.
FEATURES
·Excellent Switching Times
: ton=1.1μS(Max.), tf=0.7μS(Max.), at IC=1A
·High Collector Voltage : VCBO=700V.
MAXIMUM RATING (Ta=25℃)
TO-126
H
J
MILLIMETERS
C
E
F
G
D
A
B
DIM
A
C
E
F
G
H
J
K
M
OP
N
L
D
1. EMITTER
2. COLLECTOR
3. BASE
K
L
M
N
O
P
8.3 MAX
5.8
0.7
Φ3.2 0.1
3.5
11.0 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 0.15
2.3 0.1
0.65 0.15
1.6
3.4 MAX
B
123
+
_
+
_
+
_
15.50 0.5
+
_
+
_
+
_
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Emitter Cut-off Current IEBO VEB=9V, IC=0 - - 10 μA
Collector Cut-off Current ICBO VCB=700V, IE=0 - - 10 μA
DC Current Gain
hFE(1) (Note) VCE=2V, IC=0.5A 9 - 38
hFE(2) VCE=2V, IC=1A 5 - -
Collector-Emitter
Saturation Voltage VCE(sat)
IC=0.5A, IB=0.1A - - 0.5
V
IC=1A, IB=0.25A - - 1
IC=1.5A, IB=0.5A - - 3
Base-Emitter
Saturation Voltage VBE(sat)
IC=0.5A, IB=0.1A - - 1
V
IC=1A, IB=0.25A - - 1.2
Collector Output Capacitance Cob VCB=10V, f=0.1MHz, IE=0 - 21 - pF
Transition Frequency fTVCE=10V, IC=0.1A 4 - - MHz
Turn-On Time ton
IB1
125Ω
B1
I
CC
V =125V
IB2
IB2
300µS
I =I =0.2A
2%
B1 B2
OUTPUT
DUTY CYCLE
INPUT
<
=
- - 1.1 μS
Storage Time tstg - - 4.0 μS
Fall Time tf- - 0.7 μS
Note : hFE Classification R:9～15, O:13～21, Y:20~38
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 700 V
Collector-Emitter Voltage VCEO 400 V
Emitter-Base Voltage VEBO 9 V
Collector Current
DC IC1.5
A
Pulse ICP 3
Base Current IB0.75 A
Collector Power
Dissipation
Ta=25℃PC
1.5
W
Tc=25℃20
Junction Temperature Tj150 ℃
Storage Temperature Range Tstg -55～150 ℃
2009. 8. 19 2/2
MJE13003
Revision No : 10
POWER DISSIPATION P (W)
0
C
0
AMBIENT TEMPERATURE Ta ( C)
C
P - Ta
BASE-EMITTER VOLTAGE
BE(sat)
0.4
0.01
COLLECTOR CURRENT I (A)
C
V - IDC CURRENT GAIN
C
COLLECTOR CURRENT I (A)
0.01
FE
DC CURRENT GAIN h
1
COLLECTOR-EMITTER SATURATION
0.01
CE(sat)
0
COLLECTOR CURRENT I (A)
C
V - I
SWITCHING TIME (µs)
0.01
COLLECTOR CURRENT I (A)
0.1
C
0.1
SWITCHING CHARACTERISTIC
0.03 0.1 0.3 1 2
3
5
10
30
50
100 COMMON EMITTER
V =2V
CE
T =150 C
j
T =25 C
j
T =-55 C
j
BE(sat) C
V (V)
0.6
0.8
1
1.2
1.4
0.03 0.1 0.3 1 2
V @I /I =3
BE(sat) CB
V @V =2V
BE(on) CE
T =-55 C
j
T =25 C
j
T =25 C
j
T =150 C
j
CE(sat) C
VOLTAGE V (V)
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.03 0.1 0.3 1 2
COMMON
EMITTER
I /I =3
CB
T =150 C
j
T =25 C
j
T =-55 C
j
COLLECTOR CURRENT I (A)
COLLECTOR EMITTER VOLTAGE V (V)
1
CE
0.01
C
SAFE OPERATING AREA
0.03 0.3 1 2
0.3
0.5
1
3
5
10 V =125V
I /I =5
CC
CB
tstg
f
t
50 100 150 200
5
10
15
20
25
310 301003001
k
0.1
0.03
0.3
1
3
10
I MAX.(PULSED)
C
(DC)
SINGLE NONREPETITIVE
PULSE Tc=25 C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE
10µS
100µS
1mS
5mS
*
*
*
*
*
*
