HFA1130/883 S E M I C O N D U C T O R Output Clamping, 850MHz Current Feedback Amplifier July 1994 Features Description * This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HFA1130/883 is a high speed, wideband current feedback amplifier featuring programmable output clamps. Built with Harris' proprietary complementary bipolar UHF-1 process, it is the fastest monolithic amplifier available from any semiconductor manufacturer. * User Programmable Output Voltage Clamps * Low Distortion (HD3, 30MHz) . . . . . . . . . . -84dBc (Typ) * Wide -3dB Bandwidth . . . . . . . . . . . . . . . 850MHz (Typ) * Very High Slew Rate . . . . . . . . . . . . . . . 2300V/s (Typ) * Fast Settling (0.1%) . . . . . . . . . . . . . . . . . . . . 11ns (Typ) * Excellent Gain Flatness (to 50MHz) . . . . . 0.05dB (Typ) * High Output Current . . . . . . . . . . . . . . . . . . 65mA (Typ) * Fast Overdrive Recovery. . . . . . . . . . . . . . . . <1ns (Typ) Applications * Residue Amplifier This amplifier is the ideal choice for high frequency applications requiring output limiting, especially those needing ultra fast overdrive recovery times. The output clamp function allows the designer to set the maximum positive and negative output levels, thereby protecting later stages from damage or input saturation. The sub-nanosecond overdrive recovery time quickly returns the amplifier to linear operation following an overdrive condition. The HFA1130/883's wide bandwidth, fast settling characteristic, and low output impedance, coupled with the output clamping ability, make this amplifier ideal for driving fast A/D converters. Component and composite video systems will also benefit from this amplifier's performance, as indicated by the excellent gain flatness, and 0.03%/0.05 Degree Differential Gain/ Phase specifications (RL = 75). * Video Switching and Routing * Pulse and Video Amplifiers * Wideband Amplifiers Ordering Information * RF/IF Signal Processing * Flash A/D Driver PART NUMBER * Medical Imaging Systems TEMPERATURE RANGE HFA1130MJ/883 -55oC HFA1130ML/883 -55oC PACKAGE to +125oC 8 Lead CerDIP to +125oC 20 Lead Ceramic LCC Pinouts +IN 3 6 OUT V- 4 5 VL + NC 4 -IN 5 NC V+ 3 2 1 20 19 18 VH 17 V+ - 6 +IN 7 15 OUT NC 8 14 NC + 9 10 11 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1994 3-204 16 NC NC 12 13 NC 7 NC 2 NC -IN NC VH VL 8 V- 1 NC NC NC HFA1130/883 (CLCC) TOP VIEW NC HFA1130/883 (CERDIP) TOP VIEW 511082-883 File Number 3625.1 Spec Number Specifications HFA1130/883 Absolute Maximum Ratings Thermal Information Voltage Between V+ and V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12V Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VVoltage at VH or VL Terminal . . . . . . . . . . . . . .(V+) + 2V to (V-) - 2V Output Current (50% Duty Cycle) . . . . . . . . . . . . . . . . . . . . . . . .55mA Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . < 2000V Storage Temperature Range . . . . . . . . . . . . . . -65oC TA +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 30oC/W Ceramic LCC Package . . . . . . . . . . . . . . 75oC/W 23oC/W Maximum Package Power Dissipation at +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.87W Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33W Package Power Dissipation Derating Factor above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/oC CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Operating Conditions Operating Supply Voltage (VS) . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Operating Temperature Range . . . . . . . . . . . . .-55oC TA +125oC RL 50 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 5V, AV = +1, RF = 510, RSOURCE = 0, RL = 100, VOUT = 0V, Unless Otherwise Specified. PARAMETERS Input Offset Voltage SYMBOL VIO Common Mode Rejection Ratio CMRR Power Supply Rejection Ratio PSRRP PSRRN Non-Inverting Input (+IN) Current +IN Current Common Mode Sensitivity +IN Resistance Inverting Input (-IN) Current IBSP CMSIBP +RIN IBSN TEMPERATURE MIN MAX UNITS 1 +25oC -6 6 mV 2, 3 +125oC, -55oC -10 10 mV 1 +25oC 40 - dB 38 - dB VCM = 0V VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V 2, 3 VSUP = 1.25V V+ = 6.25V, V- = -5V V+ = 3.75V, V- = -5V VSUP = 1.25V V+ = 5V, V- = -6.25V V+ = 5V, V- = -3.75V VCM = 0V VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V Note 1 VCM = 0V CMSIBN -IN Current Power Supply Sensitivity PPSSIBN NPSSIBN VOP100 VON100 VCM = 2V V+ = 3V, V- = -7V V+ = 7V, V- = -3V VSUP = 1.25V V+ = 6.25V, V- = -5V V+ = 3.75V, V- = -5V VSUP = 1.25V V+ = 5V, V- = -6.25V V+ = 5V, V- = -3.75V AV = -1 RL =100 AV = -1 RL =100 +125oC, -55oC 1 +25oC 45 - dB 2, 3 +125oC, -55oC 42 - dB 1 +25oC 45 - dB 2, 3 +125oC, -55oC 42 - dB 1 +25oC -40 40 A 2, 3 +125oC, -55oC -65 65 A 1 +25oC - 40 A/V 2, 3 +125oC, -55oC - 50 A/V 1 +25oC 25 - k 2, 3 +125oC, -55oC 20 - k 1 +25oC -50 50 A -75 75 A 1 +25oC - 7 A/V 2, 3 +125oC, -55oC - 10 A/V 1 +25oC - 15 A/V 2, 3 +125oC, -55oC - 27 A/V 1 +25oC - 15 A/V - 27 A/V V 2, 3 -IN Current Common Mode Sensitivity Output Voltage Swing CONDITIONS LIMITS GROUP A SUBGROUPS 2, 3 +125oC, +125oC, -55oC -55oC VIN = 3.5V 1 +25oC 3 - VIN = -3V 2, 3 +125oC, -55oC 2.5 - V VIN =+3.5V 1 +25oC - -3 V VIN = +3V 2, 3 +125oC, -55oC - -2.5 V Spec Number 3-205 511082-883 Specifications HFA1130/883 TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 5V, AV = +1, RF = 510, RSOURCE = 0, RL = 100, VOUT = 0V, Unless Otherwise Specified. PARAMETERS SYMBOL Output Voltage Swing VOP50 AV = -1 RL = 50 VON50 Output Current AV = -1 RL = 50 +IOUT Quiescent Power Supply Current ICC MAX UNITS 1, 2 +25oC, +125oC 2.5 - V VIN = -2V 3 -55oC 1.5 - V VIN = +3V 1, 2 +25oC, +125oC - -2.5 V VIN = +2V 3 -55oC - -1.5 V 1, 2 +25oC, +125oC 50 - mA 3 -55oC 30 - mA 1, 2 +25oC, +125oC - -50 mA 3 -55oC - -30 mA 1 +25oC 14 26 mA VIN = -3V RL = 100 +125oC, 2, 3 RL = 100 VHCLMP AV = -1, VIN = -2V VH = 1V VLCLMP Clamp Input Current MIN Note 2 IEE Clamp Accuracy TEMPERATURE Note 2 -IOUT AV = -1, VIN = +2V VL = -1V VHBIAS VH = 1V VL = -1V -55oC - 33 mA -26 -14 mA 1 +25oC 2, 3 +125oC, -55oC -33 - mA 1 +25oC -125 125 mV 2, 3 +125oC, -55oC -200 200 mV 1 +25oC -125 125 mV 2, 3 +125oC, -55oC -200 200 mV 1 +25oC - 200 A A +125oC, 2, 3 VLBIAS LIMITS GROUP A SUBGROUPS CONDITIONS -55oC - 300 1 +25oC -200 - A 2, 3 +125oC, -55oC -300 - A NOTES: 1. Guaranteed from +IN Common Mode Rejection Test, by: +RIN = 1/CMSIBP . 2. Guaranteed from VOUT Test with RL = 50, by: IOUT = VOUT/50. TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Table 2 Intentionally Left Blank. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 5V, AV = +2, RF = 360, RL = 100, Unless Otherwise Specified. LIMITS PARAMETERS -3dB Bandwidth Gain Flatness SYMBOL CONDITIONS NOTES TEMPERATURE MIN MAX UNITS 300 - MHz - MHz BW(-1) AV = -1, RF = 430 VOUT = 200mVP-P 1 +25oC BW(+1) AV = +1, RF = 510 VOUT = 200mVP-P 1 +25oC 550 BW(+2) AV = +2, VOUT = 200mVP-P 1 +25oC 350 - MHz GF30 AV = +2, RF = 510, f 30MHz VOUT = 200mVP-P 1 +25oC - 0.04 dB GF50 AV = +2, RF = 510, f 50MHz VOUT = 200mVP-P 1 +25oC - 0.10 dB GF100 AV = +2, RF = 510, f 100MHz, VOUT = 200mVP-P 1 +25oC - 0.30 dB Spec Number 3-206 511082-883 Specifications HFA1130/883 TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Characterized at: VSUPPLY = 5V, AV = +2, RF = 360, RL = 100, Unless Otherwise Specified. LIMITS PARAMETERS SYMBOL Slew Rate Rise and Fall Time Overshoot Settling Time 2nd Harmonic Distortion 3rd Harmonic Distortion NOTES TEMPERATURE MIN MAX UNITS +SR(+1) AV = +1, RF = 510 VOUT = 5VP-P CONDITIONS 1, 2 +25oC 1200 - V/s -SR(+1) AV = +1, RF = 510 VOUT = 5VP-P 1, 2 +25oC 1100 - V/s +SR(+2) AV = +2, VOUT = 5VP-P 1, 2 +25oC 1650 - V/s -SR(+2) AV = +2, VOUT = 5VP-P 1, 2 +25oC 1500 - V/s TR AV = +2, VOUT = 0.5VP-P 1, 2 +25oC - 1 ns TF AV = +2, VOUT = 0.5VP-P 1, 2 +25oC - 1 ns +OS AV = +2, VOUT = 0.5VP-P 1, 3 +25oC - 25 % -OS AV = +2, VOUT = 0.5VP-P 1, 3 +25oC - 20 % TS(0.1) AV = +2, RF = 510 VOUT = 2V to 0V, to 0.1% 1 +25oC - 20 ns TS(0.05) AV = +2, RF = 510 VOUT = 2V to 0V, to 0.05% 1 +25oC - 33 ns HD2(30) AV = +2, f = 30MHz VOUT = 2VP-P 1 +25oC - -48 dBc HD2(50) AV = +2, f = 50MHz VOUT = 2VP-P 1 +25oC - -45 dBc HD2(100) AV = +2, f = 100MHz VOUT = 2VP-P 1 +25oC - -35 dBc HD3(30) AV = +2, f = 30MHz VOUT = 2VP-P 1 +25oC - -65 dBc HD3(50) AV = +2, f = 50MHz VOUT = 2VP-P 1 +25oC - -60 dBc HD3(100) AV = +2, f = 100MHz VOUT = 2VP-P 1 +25oC - -40 dBc NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot-to-lot and within lot variation. 2. Measured between 10% and 90% points. 3. For 200ps input transition times. Overshoot decreases as input transition times increase, especially for AV = +1. Please refer to Performance Curves. TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLE 1) Interim Electrical Parameters (Pre Burn-In) 1 Final Electrical Test Parameters 1 (Note 1), 2, 3 Group A Test Requirements 1, 2, 3 Groups C and D Endpoints 1 NOTE: 1. PDA applies to Subgroup 1 only. Spec Number 3-207 511082-883 HFA1130/883 Die Characteristics DIE DIMENSIONS: 63 x 44 x 19 mils 1 mils 1600 x 1130 x 483m 25.4m METALLIZATION: Type: Metal 1: AICu(2%)/TiW Thickness: Metal 1: 8kA 0.4kA Type: Metal 2: AICu(2%) Thickness: Metal 2: 16kA 0.8kA GLASSIVATION: Type: Nitride Thickness: 4kA 0.5kA WORST CASE CURRENT DENSITY: 2.0 x 105 A/cm2 at 47.5mA TRANSISTOR COUNT: 52 SUBSTRATE POTENTIAL (Powered Up): Floating (Recommend Connection to V-) Metallization Mask Layout HFA1130/883 +IN -IN V- BAL VL VH BAL V+ OUT Spec Number 3-208 511082-883