BSS123LT1 - ON Semiconductor

October, 2011 − Rev. 6

1Publication Order Number:

BSS123LT1/D

BSS123LT1G,

BVSS123LT1G

Power MOSFET

170 mAmps, 100 Volts

N−Channel SOT−23

Features

•AEC−Q101 Qualified and PPAP Capable − BVSS123LT1G

•These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Drain−Source Voltage VDSS 100 Vdc

Gate−Source Voltage

− Continuous

− Non−repetitive (tp ≤ 50 ms)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current

− Continuous (Note 1)

− Pulsed (Note 2)

IDM

0.17

0.68

Adc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 3) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance,

Junction−to−Ambient

RqJA 556 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

1. The Power Dissipation of the package may result in a lower continuous drain

current.

2. Pulse Width v 300 ms, Duty Cycle v 2.0%.

3. FR−5 = 1.0  0.75  0.062 in.

N−Channel

SOT−23

CASE 318

STYLE 21

MARKING DIAGRAM

& PIN ASSIGNMENT

SA MG

SA = Device Code

M = Date Code

G= Pb−Free Package

Drain

Gate

Source

170 mAMPS

100 VOLTS

RDS(on) = 6 W

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

(*Note: Microdot may be in either location)

*Date Code orientation and/or position may

vary depending upon manufacturing location.

BSS123LT1G, BVSS123LT1G

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0, ID = 250 mAdc)

V(BR)DSS 100 − − Vdc

Zero Gate Voltage Drain Current

(VGS = 0, VDS = 100 Vdc) TJ = 25°C

TJ = 125°C

IDSS

−

mAdc

Gate−Body Leakage Current

(VGS = 20 Vdc, VDS = 0)

IGSS − − 50 nAdc

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

(VDS = VGS, ID = 1.0 mAdc)

VGS(th) 0.8 −2.8 Vdc

Static Drain−Source On−Resistance

(VGS = 10 Vdc, ID = 100 mAdc)

rDS(on) −5.0 6.0 W

Forward Transconductance

(VDS = 25 Vdc, ID = 100 mAdc)

gfs 80 − − mmhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Ciss −20 −pF

Output Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Coss −9.0 −pF

Reverse Transfer Capacitance

(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)

Crss −4.0 −pF

SWITCHING CHARACTERISTICS(4)

Turn−On Delay Time (VCC = 30 Vdc, IC = 0.28 Adc,

VGS = 10 Vdc, RGS = 50 W)

td(on) −20 −ns

Turn−Off Delay Time td(off) −40 −ns

REVERSE DIODE

Diode Forward On−Voltage

(ID = 0.34 Adc, VGS = 0 Vdc)

VSD − − 1.3 V

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

ORDERING INFORMATION

Device Package Shipping†

BSS123LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

BSS123LT3G SOT−23

(Pb−Free)

10000 / Tape & Reel

BVSS123LT1G SOT−23

(Pb−Free)

3000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

BSS123LT1G, BVSS123LT1G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

ID, DRAIN CURRENT (AMPS)

rDS(on), STATIC DRAIN-SOURCE ON-RESISTANCE

(NORMALIZED)

VGS(th), THRESHOLD VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPS)

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

VDS, DRAN SOURCE VOLTAGE (VOLTS)

Figure 1. Ohmic Region

1.0

0.8

0.6

0.4

0.2

100 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0

VGS, GATE SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

1.2

1.05

1.1

1.10

1.0

0.95

0.9

0.85

0.8

0.75

0.7

-60 -20 +20 +60 +100 +140 -60 -20 +20 +60 +100 +140

T, TEMPERATURE (°C)

Figure 3. Temperature versus Static

Drain−Source On−Resistance

T, TEMPERATURE (°C)

Figure 4. Temperature versus Gate

Threshold Voltage

TA = 25°C

VGS = 10 V

9 V

8 V

7 V

6 V

4 V

3 V

5 V

VDS = 10 V -55°C25°C

125°C

VGS = 10 V

ID = 200 mA

VDS = VGS

ID = 1.0 mA

RDS(on) LIMIT

0.001

0.01

Figure 5. Maximum Rated Forward Biased

Safe Operating Area

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

0.1 10

VGS = 20 V

SINGLE PULSE

TC = 25°C

1 ms

100 ms

10 ms

0.1

THERMAL LIMIT

PACKAGE LIMIT

100 1000

BSS123LT1G, BVSS123LT1G

http://onsemi.com

TYPICAL ELECTRICAL CHARACTERISTICS

1000

100

0.1

1001010.10.001 1000

t, TIME (s)

1 oz. Cu Pad, 5mm thick, 25mm2 area

Figure 6. Thermal Response

0.010.00010.000001

D = 0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

0.00001

r(t), EFFECTIVE TRANSIENT THERMAL

RESPONSE RESISTANCE

BSS123LT1G, BVSS123LT1G

http://onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

STYLE 21:

PIN 1. GATE

2. SOURCE

3. DRAIN

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BSS123LT1/D

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