ES3A thru ES3M 3.0 Amps. Super Fast Surface Mount Rectifiers SYNSEMI SEMICONDUCTOR Voltage Range 50 to 1000 Volts Forward Current 3.0 Amperes Features @ Glass passivated junction chip @ For surface mounted application @ Low profile package @ Built-in strain relief a @ Ideal for automated placement @ Easy pick and place @ Superfast recovery time for high efficiency DO-214AB (SMC) @ Glass passivated chip junction 1218 @ High temperature soldering: Visi. 82, i 250C/10 seconds at terminals i | 245(6.22) @ Plastic material used carries Underwriters Laboratory ee Classification 94-0 i Mechanical Data oise0) @ Cases: Molded plastic boar 1s) @ Terminals: Solder plated @ Polarity: Indicated by cathode band @ Weight: 0.007 ounce, 0.21 gram -B20(8. 13 : ee Lo S213) __ | Maximum Ratings and Electrical Characteristics Difhistialoti in tnehes and {ian lmetaral Ratings at 2c ambient temperature unless cthensise specified. Single phase, half waye, G@OHz, resistive or indudive bad. For capadtive load, derate current by 209% ES ES Es ES ES ES ES Es ES - Eeraiete! Symbols | 3, | 3B | 3c 3D 3F 3G | 4 3k | an [| Uns Maximum repetitive peak reverse voltage Misi 5 400 160 20g 300 400 goo B00 qooo Volts Mlasiroum RMS voltage Wie 36 Fo 105 140 #10 280 420 56d Fo Volts Mlasiroum CC Bleeking voltage Vow 50 100 160 20) 300 400 6od aod 1a08 Valts Maximum average fonyard rectified current See Fig. 1 Kany 3.0 Arps Peak fonvard sume current, 8.3rmes single half sine-wave superinpe sed on rated load esi 100.0 Amps WEDEC Method) GT, =1 00C Masimurn instantaneous torvand voltage @ 3.04, Ve 0.96 14 VW Volts Masimum OG reverse current @ T,=25C 70.0 wh, at rated OC blocking voltage MT =100ec k 5O0 uA Maximum reverse recovery time (Mote 13 1 36 ns Typieal junction capacitance (Mete 2) C, 50 40 pF Typical thennal resistance (Mote ah Foun at oly Ra 12 Operating tarnperature range Tj -65 to +760 aS Storage temperature range Teas -66 te +760) i Notes: = 1. Reverse Recovery Test Conditions: |=0.54, .=1.04, .=0.254 2. Measured at1 MHz and Applied =4.0 Volts 3. Units Mounted on PoC.B. with 0.37 0.31"(8.0% 9.0mm) Copper Pad AreasRATINGS AND CHARACTERISTIC CURVES ES3A thru ES3M (T, =26C unless othenwise notech INSTANTANEOUS FORWARD CURRENT. (A) AVERAGE FORWARD CURRENT. [A] JUNCTION GAPACITANCE (nF) FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 30 RESISTIVE OR INDUCTIVE LOAD 20 N 16 PEt = Ms, = C.8. MOUNTED ON X 0.391%0.31(8.0X%8.0rmm) COPPER PADS Bo 0 100 10 120 130 LEAD TEMPERATURE. (C) FIG.3- TYPICAL INSTANTANEOUS 100 of 6.01 o4 FORWARD CHARACTERISTICS T= PULSE WIOTH-30005 1% DUTY 2 a g . & O68 Of 10 12 14 16 FORWARD VOLTAGE. (Vv) 140 14 FIG.5- TYPICAL JUNCTION CAPACITANCE Tj=28C f=1,0MHz Vsig=SOmp-p FSa4_ 1 10 REVERSE VOLTAGE. (Vv) 150 FIG.2- MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 150 T TTT x 6.3ms Single Half Sine Wave <n (JEDEC Mathod) at Ti=120C _| | z= e 5 100 5 gel ee g 7h 2 bn Q meee i rs ik ha 3 235 fas a oO 10 100 - NUMBER OF CYCLES AT 60Hz FIG.4- TYPICAL REVERSE CHARACTERISTICS 8 = a Tja76C INSTANTANEOUS REVERSE CURRENT, (pA) 2 = 0.04 o 20 40 60 80 100 120 PERCENT OF RATED PEAK REVERSE VOLTAGE. (%4) 140