DHG 30 I 600HA
advanced
Sonic-FRD
Symbol Definition R a t i n g s
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
typ. max.
I
FSM
I
R
A
µA
V
200
I
FAV
A
V
F
2.36
R
thJC
0.70 K/W
V
R
=
13
min.
30
ms (50 Hz), sine
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
V
RRM
V600
50
T
VJ
V°C=
T
VJ
°C=mA
5
Package:
Part number
V
R
=
T
VJ
=°CI
F
=A
V
T
C
=85°C
P
tot
180 W
T
C
°C=
A
I
RM
12
/dt
I
F
=A;
V
R
=V
A
t
rr
E
AS
tbd mJ
T
VJ
°C
=
I
AS
=A;L = µH
I
AR
A
V
A
=tbd
f = 10 kHz
1.5·V
R
typ.;
T
VJ
150 °C
-55
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
V
I
t
RRM
FAV
rr
=
=
=
600
30
35
30
T
VJ
=45°C
30
-di
F
=600 A/µs
400
100
DHG 30 I 600HA
V
A
ns
600
V
600
25
25
25
t
p
=10
25
max. repetitive rev ers e voltage
reverse current
forward voltage
average forward current
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
non-repetitive avalanche energy
repetitive avalanche current
reverse recovery time
Conditions Unit
(Marking on product)
T
VJ
°C
=25
C
J
pF
j
unction capacitance V
R
=V;
300 T
VJ
125
V
F0
V
1.31
T
VJ
=150°C
r
F
28.6
f = 1 MHz C
25
m
TO-247AD
V2.20T
VJ
CI
F
=A
V
30 125
I
F
=A60
I
F
=A60
ns35
ns
Industry standard outline
Epoxy meets UL 94V-0
RoHS compliant
T
VJ
°C=25
T
VJ
°C=125
T
VJ
°C=25
T
VJ
°C=125
rectangular, d = 0.5
threshold voltage
slope resistance for power loss calculation only
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0614
* Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/
DHG 30 I 600HA
advanced
I
RMS
A
per pin* 70
R
thCH
K/W
0.25
M
D
Nm
1.2
mounting torque 0.8
T
stg
°C
150
storage temperature -55
Weight g
6
Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
Symbol Definition Ratings
typ. max.min.
Conditions
RMS current
thermal resistance case to heatsink
Unit
* Irms is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Outlines TO-247AD
F
C
N
120
mounting force with clip 20
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
0614
* Data according to IEC 60747and per diode unless otherwise specified
http://store.iiic.cc/