AO3401
30V P-Channel MOSFET
General Description Product Summary
V
DS
I
D
(at V
GS
=-10V) -4.0A
R
DS(ON)
(at V
GS
=-10V) < 50mΩ
R
DS(ON)
(at V
GS
=-4.5V) < 60mΩ
R
DS(ON)
(at V
GS
=-2.5V) < 85mΩ
Symbol
V
DS
The AO3401 uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
V
Maximum UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
-30V
Drain-Source Voltage
-30
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
V
DS
V
GS
I
DM
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Max
0.9
T
A
=70°C
Junction and Storage Temperature Range -55 to 150
°C/W
R
θJA
70
100 90
°C
Thermal Characteristics UnitsParameter Typ
V
Drain-Source Voltage
-30
A
I
D
-4
-3.2
-27
V±12Gate-Source Voltage T
A
=25°C
T
A
=70°C
Power Dissipation
B
P
D
Pulsed Drain Current
C
Continuous Drain
Current
T
A
=25°C W
1.4
Maximum Junction-to-Lead °C/W
°C/W
Maximum Junction-to-Ambient
A D
63 125
80
Maximum Junction-to-Ambient
A
SOT23
Top View Bottom View
D
G
S
G
S
D
G
D
S
Rev 6: Feb. 2011
www.aosmd.com Page 1 of 5
AO3401
Symbol Min Typ Max Units
BV
DSS
-30 V
V
DS
=-30V, V
GS
=0V -1
T
J
=55°C -5
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage -0.5 -0.9 -1.3 V
I
D(ON)
-27 A
41 50
T
J
=125°C 62 75
47 60 mΩ
60 85 mΩ
g
FS
17 S
V
SD
-0.7 -1 V
I
S
-2 A
I
SM
-27 A
C
iss
645 pF
C
oss
80 pF
C
rss
55 pF
R
g
4 7.8 12 Ω
Q
g
(10V) 14 nC
Q
g
(4.5V) 7 nC
Q
gs
1.5 nC
Q
2.5
nC
Pulsed Body-Diode Current
B
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
DYNAMIC PARAMETERS
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge
V
GS
=-10V, V
DS
=-15V, I
D
=-4.0A
Gate Source Charge
Gate Drain Charge
Total Gate Charge
R
DS(ON)
Static Drain-Source On-Resistance mΩ
I
S
=1A,V
GS
=0V
V
DS
=-5V, I
D
=-4.0A
V
GS
=-2.5V, I
D
=-2A
V
GS
=-4.5V, I
D
=-3.7A
V
DS
=V
GS
I
D
=-250µA
V
DS
=0V, V
GS
= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Forward Transconductance
Diode Forward Voltage
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
Drain-Source Breakdown Voltage
On state drain current
I
D
=-250µA, V
GS
=0V
V
GS
=-10V, V
DS
=5V
V
GS
=-10V, I
D
=-4.0A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=-15V, f=1MHz
SWITCHING PARAMETERS
Q
gd
2.5
nC
t
D(on)
6.5 ns
t
r
3.5 ns
t
D(off)
41 ns
t
f
9 ns
t
rr
11 ns
Q
rr
3.5 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Charge I
F
=-4.0A, dI/dt=100A/µs
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime V
GS
=-10V, V
DS
=-15V,
R
L
=3.75Ω, R
GEN
=3Ω
Turn-Off Fall Time
Gate Drain Charge
Body Diode Reverse Recovery Time I
F
=-4.0A, dI/dt=100A/µs
A. The value of RθJA is measured with the device mounted on 1in2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PDis based on TJ(MAX)=150°C, using ≤10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
Rev 6: Feb. 2011 www.aosmd.com Page 2 of 5
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
17
5
2
10
0
18
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
40
60
80
100
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-2.5V
ID=-2A
VGS=-10V
ID=-4A
VGS=-4.5V
ID=-3.7A
25°C
125°C
V
DS
=-5V
VGS=-4.5V
VGS=-10V
0
5
10
15
20
25
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-2.0V
-2.5V
10V
4.5V
VGS=-2.5V
40
0
5
10
15
20
0 0.5 1 1.5 2 2.5 3
-ID(A)
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
20
40
60
80
100
0 2 4 6 8 10
RDS(ON) (mΩ
Ω
Ω
Ω)
-ID(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
-IS(A)
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
25
°
C
125
°
C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
VGS=-2.5V
ID=-2A
VGS=-10V
ID=-4A
VGS=-4.5V
ID=-3.7A
30
50
70
90
110
130
150
0246810
RDS(ON) (mΩ
Ω
Ω
Ω)
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
25°C
125°C
V
DS
=-5V
VGS=-4.5V
VGS=-10V
ID=-4A
25
°
C
125°C
0
5
10
15
20
25
012345
-ID(A)
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
V
GS
=-2.0V
-2.5V
10V
4.5V
VGS=-2.5V
Rev 6: Feb. 2011 www.aosmd.com Page 3 of 5
AO3401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0 5 10 15
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 5 10 15 20 25
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-4A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
s
10ms
0
2
4
6
8
10
0 5 10 15
-VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
0
200
400
600
800
1000
0 5 10 15 20 25
Capacitance (pF)
-VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
VDS=-15V
ID=-4A
1
10
100
1000
10000
0.00001 0.001 0.1 10 1000
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
TA=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
-ID(Amps)
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
µ
s
10s
1ms
DC
RDS(ON)
limited
TJ(Max)=150°C
T
A
=25°C
100
µ
s
10ms
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Zθ
θ
θ
θJA Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
Rev 6: Feb. 2011 www.aosmd.com Page 4 of 5
AO3401
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
2
E = 1/2 LI
AR
AR
BV
DSS
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
VDC
Ig
Vds
DUT
VDC
Vgs
Vgs Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
-
+
-10V
Vdd
Vgs
Id
Vgs
Rg
DUT
VDC
Vgs
Vds
Id
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds L
-
+
2
E = 1/2 LI
AR
AR
BV
DSS
I
AR
Ig
Vgs
-
+
VDC
DUT
L
Vgs
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
dI/dt
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
-Isd
-Vds
F
-I
-I
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Resistive Switching Test Circuit & Waveforms
-
+
Vgs
Vds
t t
t
tt
t
90%
10%
r
on
d(off)
f
off
d(on)
Rev 6: Feb. 2011
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