MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL 2N3766 2N3767 UNITS
Collector-Base Voltage VCBO 80 100 V
Collector-Emitter Voltage VCEO 60 80 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current IC4.0 A
Base Current IB2.0 A
Power Dissipation PD25 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 7.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV VCE=Rated VCBO, VBE=1.5V 10 μA
ICBO VCB=Rated VCBO 10 μA
ICEO VCE=Rated VCEO 500 μA
IEBO VEB=6.0V 500 μA
BVCEO IC=100mA (2N3766) 60 V
BVCEO IC=100mA (2N3767) 80 V
VCE(SAT) IC=500mA, IB=50mA 1.0 V
VCE(SAT) IC=1.0A, IB=100mA 2.5 V
VBE(ON) VCE=10V, IC=1.0A 1.5 V
hFE VCE=5.0V, IC=50mA 30
hFE VCE=5.0V, IC=500mA 40 160
hFE VCE=10V, IC=1.0A 20
fTVCE=10V, IC=500mA, f=10MHz 10 MHz
Cob VCB=10V, IC=0, f=100KHz 50 pF
2N3766
2N3767
NPN SILICON
POWER TRANSISTOR
TO-66 CASE
Central
Semiconductor Corp.
TM
R1 (25-October 2007))
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3766, 2N3767 types
are silicon NPN power transistors manufactured by the
epitaxial base process designed for power amplifier and
medium speed switching applications.
MARKING CODE: FULL PART NUMBER
Central
Semiconductor Corp.
TM
TO-66 CASE - MECHANICAL OUTLINE
2N3766
2N3767
NPN SILICON
POWER TRANSISTOR
R1 (25-October 2007))
MARKING CODE: FULL PART NUMBER
