SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT
MBRB2080/90/100CT
MBR2080/90/100CT-1
Technical Data
Data Sheet 2914 Rev. E
Applications:
•
••
• Switching power supply •
••
• Conve rters •
••
• Free-Wheeling diodes •
••
• Reverse bat t e ry protection
Features:
• 150 °C TJ operation
• Cent e r tap conf iguration
• Low forwar d voltage dr op
• High purity, high temperature epoxy encapsulation for enhanced mechanical strength and
moisture resistance
• Hig h fr e quenc y operation
• Guard ring for enhanced ruggedness and long term reliability
Case styles
MBR20…CT
TO-220AB
MBRB20…CT
D2PAK
MBR20…CT-1
TO-262
Mechanical Dimensions: In mm/ inches
TO-220AB
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT
MBRB2080/90/100CT
MBR2080/90/100CT-1
Technical Data
Data Sheet 2914 Rev. E D2PAK
10.16(0.400)
REF.
15.49(0.610)
14.73(0.580)
1.40(0.055)
1.14(0.045)
3
×
8.90(0.350)
8.50(0.335)
2
×
0.93(0.037)
0.69(0.027)
4.69(0.185)
4.20(0.165)
1.32(0.052)
1.22(0.048)
5.28(0.208)
4.78(0.188)
5.08(0.200)REF.
0.55(0.022)
0.46(0.018)
BASE
COMMON
CATHODE
ANODE 1 ANODE 2
CATHODE
COMMON
1.17(0.046)
1.37(0.054)
1.30(0.051)
1.70(0.067)
TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT
MBRB2080/90/100CT
MBR2080/90/100CT-1
Technical Data
Data Sheet 2914 Rev. E
Maximum Ratings:
Characteristics Symbol Condition Max. Units
80 MBR2080CT
MBRB2080CT
MBR2080CT-1
90 MBR2090CT
MBRB2090CT
MBR2090CT-1
Peak Inverse Voltage VRWM -
100 MBR20100CT
MBRB20100CT
MBR20100CT-1
V
10(Per leg) Max. Average Forward IF(AV) 50% duty cycle @TC =133℃,
rectangular wave form 20(Per device) A
Max. Peak One Cycle Non-
Repetiti ve Surge Current
(per leg)
IFSM
8.3 ms, half Sine pulse
150
A
Peak Repetitive Reverse
Surge Current (per leg) IRRM 2.0µs,1.0KHz 0.5 A
Electrical Characteristics:
Characteristics Symbol Condition Max. Units
Max. Forward Voltage Drop
(per leg)* VF1 @ 10A, Pulse, TJ = 25 ℃
@ 20 A, Pulse, TJ = 25 ℃
0.85
0.95 V
V
F2 @ 10 A, Pul se, TJ = 125 ℃
@ 20 A, Pulse, TJ = 125 ℃
0.75
0.85 V
Max. Reverse Current
(per leg)* IR1 @VR = rated VR
TJ = 25 ℃ 1.00 mA
I
R2 @VR = rated VR
TJ = 125 ℃
6.0 mA
Max. Voltage Rate of Change dv/dt - 10 ,00 0 V/µs
* Pulse Width < 300µs, Duty Cycle <2%
Thermal -Mec hanic al Spe cif ica tions:
Characteristics Symbol Condition Specification Units
Max. Junction Temperature TJ - -55 to +150
℃
Max. Storage Temperature Tstg - -55 to +150
℃
Maximum Thermal
Resistance Junction to Case
(per leg)
RθJC DC operation 2.0 ℃/W
Approximate Weight wt - 1.9 g
Mounting Torque TM - 6(Min.)
12(Max.) Kg-cm
Case Style TO-220AB D2PAK TO-262
SENSITRON
SEMICONDUCTOR
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
MBR2080/90/100CT
MBRB2080/90/100CT
MBR2080/90/100CT-1
Technical Data
Data Sheet 2914 Rev. E
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior not ice to improve
product characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the l ates t
version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment ,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or
by means of us ers’ fail -s a fe precautions or other arrangement .
3- In no event shall Sensi tr on Sem i c onduc t or be liable for any damages that m ay res ul t from an accident or any other cause duri ng
operation of the user’s units accordi ng to the dat as heet(s ). Sens i tr on Sem i conduc tor assumes no respons i bil i t y for any int ell ec tual
property claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall Sensi t ron Sem i c onduc tor be liable for any failure in a semi c onduc t or device or any secondary damage resulting
from us e at a value exceeding the absolut e m aximum rat ing.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or Sensitron Semiconductor.
6- The datasheet(s ) may not be reproduced or duplic ated, in any form, in whole or part, without the expressed writ ten perm iss i on of
Sensit ron S em i c onductor .
7- The products (tec hnolo gies ) descr ibed in the datas heet( s ) are not to be provided to any party whose purpose in their application will
hinder main tenanc e of int ernat ional peac e and safet y nor are they to be applied to that purpose by their direc t purchasers or any third
party. When exporting these products (t ec hnologi es ), the nec ess ary procedures are to be taken in acc ordanc e with related laws and
regulations.
