1. Product profile
1.1 General description
75 W LDMOS power transistor for base station applications at frequencies from 2500 MHz
to 2700 MHz.
[1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at
0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features
nTypical 1-carrier N-CDMA performance (Single carrier IS-95 with pilot, paging, sync
and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on the
CCDF. Channel bandwidth is 1.2288 MHz) at a frequency of 2500 MHz and
2700 MHz, a supply voltage of 28 V and an IDq of 600 mA:
uAverage output power=9W
uPower gain = 17 dB
uDrain efficiency = 23 %
uACPR885 = −50.0 dBc in 30 kHz bandwidth
nEasy power control
nIntegrated ESD protection
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (2500 MHz to 2700 MHz)
nInternally matched for ease of use
BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Rev. 01 — 22 October 2009 Product data sheet
Table 1. Typical performance
RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) PL(M) GpηDACPR885k ACPR1980k
(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc)
1-carrier N-CDMA[1] 2500 to 2700 28 9 75 17 23 −50[2] −60[2]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 2 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
nCompliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
nRF power amplifiers for base stations and multicarrier applications in the
2500 MHz to 2700 MHz frequency range
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G27-75 (SOT502A)
1 drain
2 gate
3 source [1]
BLF6G27LS-75 (SOT502B)
1 drain
2 gate
3 source [1]
3
2
1
sym112
1
3
2
3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF6G27-75 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads SOT502A
BLF6G27LS-75 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 18 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 3 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
[1] Measured within 30 kHz bandwidth.
[2] Measured at 2.7 GHz and 3 dB compression of the CCDF at 0.01 % probability.
Table 5. Thermal characteristics
Symbol Parameter Conditions Type Typ Unit
Rth(j-case) thermal resistance from
junction to case Tcase =80°C;
PL= 60 W (CW) BLF6G27-75 0.85 K/W
BLF6G27LS-75 0.75 K/W
Table 6. Characteristics
T
j
= 25
°
C per section; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 0.5 mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10V;I
D= 100 mA 1.4 2 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 3 µA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 14.9 18 - A
IGSS gate leakage current VGS = +11 V; VDS = 0 V - - 300 nA
gfs forward transconductance VDS =10V; I
D=5A - 7 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID= 3.5 A - 0.14 0.25 Ω
Crs feedback capacitance VGS =0 V; V
DS =28V;
f=1MHz - 1.6 - pF
Table 7. Application information
Mode of operation: 1-carrier N-CDMA, single carrier IS-95 with pilot, paging, sync and 6 traffic
channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on the CCDF, channel bandwidth
is 1.2288 MHz; f
1
= 2500 MHz; f
2
= 2600 MHz; f
3
= 2700 MHz; RF performance at V
DS
=28V;
I
Dq
= 600 mA; T
case
=25
°
C; unless otherwise specified, in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) =9W 1517- dB
RLin input return loss PL(AV) =9W - −10 - dB
ηDdrain efficiency PL(AV) = 9 W 19.0 23 - %
ACPR885k adjacent channel power ratio
(885 kHz) PL(AV) =9W [1] -−50 −45 dBc
ACPR1980k adjacent channel power ratio
(1980 kHz) PL(AV) =9W [1] -−60 −55 dBc
PL(M) peak output power [2] 70 75 - W
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 4 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.1 Ruggedness in class-AB operation
The BLF6G27-75 and BLF6G27LS-75 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 600 mA; PL= 65 W (CW); f = 2500 MHz.
7.2 One-tone CW
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 1. Power gain as a function of load power;
typical values Fig 2. Drain efficiency as a function of load power;
typical values
PL (W)
0806020 40
001aak974
14
16
12
18
20
Gp
(dB)
10
(1)
(3)
(2)
PL (W)
0806020 40
001aak975
40
50
30
20
10
60
70
ηD
(%)
0
(2)
(1)
(3)
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 5 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.3 Single carrier IS-95
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 3. Power gain as a function of load power;
typical values Fig 4. Drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 5. Adjacent channel power ratio (885 kHz) as a
function of load power; typical values Fig 6. Adjacent channel power ratio (1980 kHz) as a
function of load power; typical values
PL (W)
0504020 3010
001aak976
16
17
15
18
19
Gp
(dB)
14
(1)
(3)
(2)
PL (W)
0504020 3010
001aak977
20
30
10
40
50
ηD
(%)
0
(2)
(1)
(3)
PL (W)
0504020 3010
001aak978
(2)
(1)
(3)
−50
−40
−60
−30
−20
−70
ACPR885k
(dBc)
PL (W)
0504020 3010
001aak979
(1)
(2)
(3)
−60
−70
−50
−40
ACPR1980k
(dBc)
−80
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 6 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.4 Single carrier W-CDMA
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 7. Power gain as a function of load power;
typical values Fig 8. Drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 9. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values Fig 10. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
PL (W)
0504020 3010
001aak980
16
17
15
18
19
Gp
(dB)
14
(1)
(3)
(2)
PL (W)
0504020 3010
001aak981
20
40
60
ηD
(%)
0
(2)
(3)
(1)
PL (W)
0504020 3010
001aak982
(2)
(1)
(3)
−40
−30
−50
−20
−10
−60
ACPR5M
(dBc)
PL (W)
0504020 3010
001aak983
(1)
(2)
(3)
−50
−40
−60
−30
−20
−70
ACPR10M
(dBc)
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 7 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
7.5 2-carrier W-CDMA
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 11. Power gain as a function of load power;
typical values Fig 12. Drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS = 28 V; IDq = 600 mA; carrier spacing = 10 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 13. Adjacent channel power ratio (5 MHz) as a
function of load power; typical values Fig 14. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
PL (W)
0504020 3010
001aak984
16
17
15
18
19
Gp
(dB)
14
(1)
(3)
(2)
PL (W)
0504020 3010
001aak985
20
40
60
ηD
(%)
0
(2)
(3)
(1)
PL (W)
0504020 3010
001aak986
(3)
(1)
(2)
−40
−30
−50
−20
−10
−60
ACPR5M
(dBc)
PL (W)
0504020 3010
001aak987
(3)
(2)
(1)
−40
−30
−50
−20
−10
−60
ACPR10M
(dBc)
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 8 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
8. Test information
8.1 Impedance information
8.2 Test circuit
Table 8. Typical impedance
Typical values per section unless otherwise specified.
f ZSZL
GHz Ω Ω
2.5 5.3 − j7.7 6.0 − j3.3
2.6 8.7 − j8.7 4.7 − j2.6
2.7 12.2 + j0.4 3.9 − j2.4
Fig 15. Definition of transistor impedance
001aaf059
drain
ZL
ZS
gate
Printed-Circuit Board (PCB) material: Taconic RF35 with εr= 3.5 and thickness = 0.762 mm.
See Table 9 for list of components.
Fig 16. Component layout
001aak988
BLF6G27-75
OUTPUT REV2
NXP
BLF6G27-75
INPUT REV2
NXP
C5
R1
C3
C6
R2
C7
B1
C4
C1
C2
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 9 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
[1] American Technical Ceramics type 100A or capacitor of same quality.
[2] American Technical Ceramics type 100B or capacitor of same quality.
Table 9. List of components
See Figure 16 for component layout.
Component Description Value Remarks
B1 ferrite bead -
C1, C2, C3 multilayer ceramic chip capacitor 13 pF [1]
C4 multilayer ceramic chip capacitor 10 pF [2]
C5, C6 multilayer ceramic chip capacitor 4.7 µF TDK
C7 electrolytic capacitor 220 µF; 63 V
R1, R2 SMD resistor 10 ΩSMD 1206
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 10 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
9. Package outline
Fig 17. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502A
p
L
AF
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035 1.345
1.335
0.210
0.170 0.133
0.123 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 11 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
Fig 18. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 12 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
10. Abbreviations
11. Revision history
Table 10. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
N-CDMA Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
W-CDMA Wideband Code Division Multiple Access
WiMAX Worldwide Interoperability for Microwave Access
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF6G27-75_6G27LS-75_1 20091022 Product data sheet - -
BLF6G27-75_6G27LS-75_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 22 October 2009 13 of 14
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF6G27-75; BLF6G27LS-75
WiMAX power LDMOS transistor
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 October 2009
Document identifier: BLF6G27-75_6G27LS-75_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 4
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Single carrier IS-95. . . . . . . . . . . . . . . . . . . . . . 5
7.4 Single carrier W-CDMA . . . . . . . . . . . . . . . . . . 6
7.5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
8.1 Impedance information. . . . . . . . . . . . . . . . . . . 8
8.2 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13 Contact information. . . . . . . . . . . . . . . . . . . . . 13
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
