Document Number: 93360 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Schottky Rectifier, 3 A
VS-30BQ100-M3
Vishay Semiconductors
FEATURES
• Low forward voltage drop
• Guard ring for enhanced ruggedness and long
term reliability
• Halogen-free according to IEC 61249-2-21
definition
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
DESCRIPTION
The VS-30BQ100-M3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and small foot prints on PC boards. Typical applications are
in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
PRODUCT SUMMARY
Package SMC
IF(AV) 3.0 A
VR100 V
VF at IF0.62 V
IRM 5 mA at 125 °C
TJ max. 175 °C
Diode variation Single die
EAS 3.0 mJ
Cathode Anode
SMC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 3.0 A
VRRM 100 V
IFSM tp = 5 μs sine 800 A
VF3.0 Apk, TJ = 125 °C 0.62 V
TJRange - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-30BQ100-M3 UNITS
Maximum DC reverse voltage VR100 V
Maximum working peak reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV)
50 % duty cycle at TL = 148 °C, rectangular waveform 3.0
A
50 % duty cycle at TL = 138 °C, rectangular waveform 4.0
Maximum peak one cycle
non-repetitive surge current IFSM
5 μs sine or 3 μs rect. pulse Following any rated
load condition and with
rated VRRM applied
800
10 ms sine or 6 ms rect. pulse 70
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 6 mH 3.0 mJ
Repetitive avalanche current IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93360
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 13-Sep-10
VS-30BQ100-M3
Vishay Semiconductors Schottky Rectifier, 3 A
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
Notes
(1) thermal runaway condition for a diode on its own heatsink
(2) Mounted 1" square PCB
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1)
3 A TJ = 25 °C 0.79
V
6 A 0.90
3 A TJ = 125 °C 0.62
6 A 0.70
Maximum reverse leakage current IRM
TJ = 25 °C VR = Rated VR
0.5 mA
TJ = 125 °C 5.0
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 115 pF
Typical series inductance LSMeasured lead to lead 5 mm from package body 3.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range TJ (1), TStg - 55 to 175 °C
Maximum thermal resistance,
junction to lead RthJL (2)
DC operation
12
°C/W
Maximum thermal resistance,
junction to ambient RthJA 46
Approximate weight 0.24 g
0.008 oz.
Marking device Case style SMC (similar to DO-214AB) 3J
dPtot
dTJ
------------- 1
RthJA
--------------<
Document Number: 93360 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
VS-30BQ100-M3
Schottky Rectifier, 3 A Vishay Semiconductors
Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
0.1
1
10
IF - Instantaneous Forward Current (A)
VFM - Forward Voltage Drop (V)
0.2 0.8 1.210.40 0.6
TJ = 175 °C
TJ = 125 °C
TJ = 25 °C
0.001
0.0001
0.00001
1
0.1
0.01
10
I
R
- Reverse Current (mA)
V
R
- Reverse Voltage (V)
20 40 60 800 100
TJ = 175 °C
TJ
= 125 °C
TJ = 100 °C
TJ = 50 °C
TJ = 75 °C
TJ = 25°C
TJ = 150 °C
10
100
1000
C
T
- Junction Capacitance (pF)
V
R
- Reverse Voltage (V)
20 40 600
TJ = 25 °C
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1 10010
Single pulse
(thermal resistance)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
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VS-30BQ100-M3
Vishay Semiconductors Schottky Rectifier, 3 A
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
100
120
140
160
180
Allowable Lead Temperature (°C)
IF(AV) - Average Forward Current (A)
3450
DC
See note (1)
Square wave (D = 0.50)
80% rated Vr applied
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
12
0
1.0
0.5
1.5
2.0
2.5
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.50
DC
RMS limit
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
10
100
1000
IFSM - Non-Repetitive Surge Current (A)
tp - Square Wave Pulse Duration (µs)
100 1000 10 00010
At any rated load condition
and with rated VRRM applied
following surge
Document Number: 93360 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 13-Sep-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5
VS-30BQ100-M3
Schottky Rectifier, 3 A Vishay Semiconductors
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-30BQ100-M3/9AT 9AT 3500 13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95402
Part marking information www.vishay.com/doc?95403
Packaging information www.vishay.com/doc?95404
2- Current rating
3- B = SMC
4- Q = Schottky “Q” series
5- Voltage rating (100 = 100 V)
1- Vishay Semiconductors product suffix
Device code
51 32 4 6
VS- 30 B Q 100 -M3
- Environmental digit:
-M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free
6
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 02-Oct-12 1Document Number: 91000
Disclaimer
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
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