BAV200...BAV203
Vishay Telefunken
Rev. 3, 01-Apr-99 1 (4)
www.vishay.de FaxBack +1-408-970-5600
Document Number 85544
Silicon Epitaxial Planar Diodes
Applications
General purposes
96 12009
Absolute Maximum Ratings
Tj = 25
_
CParameter Test Conditions Type Symbol Value Unit
Peak reverse voltage BAV200 VRRM 60 V
g
BAV201 VRRM 120 V
BAV202 VRRM 200 V
BAV203 VRRM 250 V
Reverse voltage BAV200 VR50 V
g
BAV201 VR100 V
BAV202 VR150 V
BAV203 VR200 V
Forward current IF250 mA
Peak forward surge current tp=1s, Tj=25
°
C IFSM 1 A
Forward peak current f=50Hz IFM 625 mA
Junction temperature Tj175
°
C
Storage temperature range Tstg –65...+175
°
C
Maximum Thermal Resistance
Tj = 25
_
C
Parameter Test Conditions Symbol Value Unit
Junction ambient on PC board 50mmx50mmx1.6mm RthJA 500 K/W
BAV200...BAV203
Vishay Telefunken
Rev. 3, 01-Apr-992 (4)
www.vishay.de FaxBack +1-408-970-5600 Document Number 85544
Electrical Characteristics
Tj = 25
_
C
Parameter Test Conditions Type Symbol Min Typ Max Unit
Forward voltage IF=100mA VF1 V
Reverse current VR=50V BAV200 IR100 nA
VR=100V BAV201 IR100 nA
VR=150V BAV202 IR100 nA
VR=200V BAV203 IR100 nA
Tj=100
°
C, VR= 50V BAV200 IR15
m
A
Tj=100
°
C, VR= 100V BAV201 IR15
m
A
Tj=100
°
C, VR= 150V BAV202 IR15
m
A
Tj=100
°
C, VR= 200V BAV203 IR15
m
A
Breakdown voltage IR=100
m
A, tp/T=0.01, BAV200 V(BR) 60 V
g
R
m
tp=0.3ms BAV201 V(BR) 120 V
BAV202 V(BR) 200 V
BAV203 V(BR) 250 V
Diode capacitance VR=0, f=1MHz CD1.5 pF
Differential forward
resistance IF=10mA rf5
W
Reverse recovery time IF=IR=30mA, iR=3mA,
RL=100
W
trr 50 ns
Characteristics (Tj = 25
_
C unless otherwise specified)
m
0 40 80 120 160
0.01
0.1
1
10
1000
I – Reverse Current ( A )
R
Tj – Junction Temperature ( °C )
200
94 9084
100
Scattering Limit
VR=VRRM
Figure 1. Reverse Current vs. Junction Temperature
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I – Forward Current ( mA )
F
VF – Forward Voltage ( V )
2.0
94 9085
Scattering Limit
Tj=25°C
Figure 2. Forward Current vs. Forward Voltage
BAV200...BAV203
Vishay Telefunken
Rev. 3, 01-Apr-99 3 (4)
www.vishay.de FaxBack +1-408-970-5600
Document Number 85544
0.1 1 10
1
10
100
1000
r – Differential Forward Resistance ( )
f
IF – Forward Current ( mA )
100
94 9089
W
Tj=25°C
Figure 3. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
96 12071
BAV200...BAV203
Vishay Telefunken
Rev. 3, 01-Apr-994 (4)
www.vishay.de FaxBack +1-408-970-5600 Document Number 85544
Ozone Depleting Substances Policy Statement
It is the policy of V ishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. V arious national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423