SOT89 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 3 OCTOBER 1995 ✪
FEATURES
* 150 Volt VCEO
* 1 Amp cont i nuous cur rent
PARTMARKI N G DETAIL – N95
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 170 V
Collector-Emitter Voltage VCEO 150 V
Emitter-Base Voltage VEBO 5V
Continuous Collector Current IC1A
Peak Pulse Current ICM 2A
Base Current IB200 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperature Range Tj:Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25° C).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Breakdown Voltages V(BR)CBO 170 V IC=100µA
VCEO(sus) 150 V IC=10mA*
V(BR)EBO 5V
IE=100µA
Collector Cut-Off
Currents ICBO, ICES 100 nA VCB=150V, VCE=150V
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Emitter Saturation
Voltages VCE(sat) 0.2
0.3 V
VIC=250mA, IB=25mA*
IC=500mA, IB=50mA*
VBE(sat) 1.0 V IC=500mA, IB=50mA*
Base-Emitter
Turn On Voltage VBE(on) 1.0 V IC=500mA, VCE=10V*
Static Forward Current
Transfer Ratio hFE 100
100
50
10
300 IC=1mA, VCE=10V
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
Transition Frequency fT100 MHz IC=50mA , V CE=10V
f=100MHz
Collector-Base
Breakdown Voltage Cobo 10 pF VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
For typical characteristics graphs see FMMT495 Datasheet
FCX495
C
C
B
E
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