www.irf.com 4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 1
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
Features
Most Rugged in Industry
Logic-Level Gate Drive
> 6KV ESD Gate Protection
Low Saturation Voltage
High Self-clamped Inductive Switching Energy
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Collector
Emitter
Gate
R
2
R
1
TERMINAL DIAGRAM
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
JEDEC TO-220AB
IRGB14C40L
JEDEC TO-262AA
IRGSL14C40L
JEDEC TO-263AB
IRGS14C40L
BVCES = 370V min, 430V max
IC @ TC = 110°C = 14A
VCE(on) typ= 1.2V @7A @25°C
IL(min)=11.5A @25°C,L=4.7mH
Absolute Maximum Ratings
Parameter Max Unit Condition
V
CES
Collector-t o-Emitter Voltage Clamped V R
G
= 1K
ohm
I
C
@ T
C
= 25°C
Continuous Colle ctor Current 20 A V
GE
= 5V
I
C
@ T
C
= 110°C
Continuous Colle ctor Current 14 A V
GE
= 5V
I
G
Continuous Gate Current 1 mA
I
Gp
Peak Gate Current 10 mA t
PK
= 1ms, f = 100Hz
V
GE
Gate-to-Emit ter Voltage Clamped V
P
D
@ T
C
= 25°C
Maximum Power Dissipation 125 W
P
D
@ T = 110°C
Maximum Power Dissipation 54 W
T
J
Operating Juncti on and - 40 to 175 °C
T
STG
Storage Temperature Range - 40 to 175 °C
V
ESD
Electrostatic Voltage 6 KV C = 100pF, R = 1.5K
ohm
I
L
Self-clamped I nductive Switching Current 11.5 A L = 4.7mH, T = 25°C
Thermal Resistance
Parameter Min Typ Max Unit
R
θJC
Thermal Resist ance, Junction-to-Case 1.2
R
θJA
Thermal Resist ance, Junction-to-Ambient 40 °C/W
(PCB Mounted, Steady State)
Z
θJC
Transient Thermal Impedance, Juction-to-Case (Fig.11)
PD - 93891A
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 2
Off-State Ele ctric al Charasteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
BV
CES
Collector-to-Emitter Breakdown Voltage 370 400 430 V R
G
= 1K ohm, I
C
=7A, V
GE
= 0V
BV
GES
Gate-to-Emitt er Breakdown Voltage 10 12 V I
G
=2m A
I
CES
Collector-to-Emitter Leakage Current 15 µA R
G
=1K ohm, V
CE
= 250V
100 µA R
G
=1K ohm, V
CE
= 250V, T
J
=150°C
BV
CER
Emitter-to-Collector Breakdown Voltage 24 28 V I
C
= -10m A
R
1
Gate Series Resistance 75 ohm
R
2
Gate-to-Emitter Resistance 10 20 30 K ohm
On-State Electrical Charasteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
1.2 1.40 I
C
= 7A, V
GE
= 4.5V
V
CE(on)
Collector-to-Emitter Saturation 1.35 1.55 V I
C
= 10A, V
GE
= 4.5V 1
Voltage 1.35 1.55 I
C
= 10A, V
GE
= 4.5V, T
C
= -40
o
C 2
1.5 1.7 I
C
= 14A, V
GE
= 5.0V, T
C
= -40
o
C4
1.55 1.75 I
C
= 14A, V
GE
= 5.0V
1.6 1.8 I
C
= 14A, V
GE
= 5.0V, T
C
=150
o
C
V
GE(th)
Gate Threshold Voltage 1.3 1.8 2.2 V V
CE
= V
GE
, I
C
= 1 m A, T
C
=25
o
C3, 5
0.75 1.8 V
CE
= V
GE
, I
C
= 1 m A, T
C
=150
o
C8
g
fs
Transconductance 10 15 19 S V
CE
= 25V, I
C
= 10A, T
C
=25
o
C
I
C
Collector Current 20 A V
CE
= 10V, V
GE
= 4.5V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min Typ Max Unit Conditions Fig
Q
g
Total Gate charge 27 I
C
= 10A, V
CE
=12V, V
GE
=5V 7
Q
ge
Gate - Emitter Charge 2.5 nC I
C
= 10A, V
CE
=12V, V
GE
=5V 15
Q
gc
Gate - Collector Charge 10 I
C
= 10A, V
CE
=12V, V
GE
=5V
t
d
(on) Turn - on delay time 0.6 0.9 1.35 V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=14V 12
t
r
Rise time 1.6 2.8 4 µs V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=14V 14
t
d
(off) Turn - off delay time 3.7 6 8.3 V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=300V
C
ies
Input Capacitance 550 825 V
GE
=0V, V
CE
=25V, f=1M H z
C
oes
Output Capacitance 100 150 pF V
GE
=0V, V
CE
=25V, f=1M H z 6
C
res
Reverse Transfer Capacitance 12 18 V
GE
=0V, V
CE
=25V, f=1M H z
25 L=0.7m H, T
C
=25°C
I
L
Self-Clamped 15.5 A L=2.2m H, T
C
=25°C9
Inductive Switching Current 11.5 L=4.7m H, T
C
=25°C10
16.5 L=1.5m H, T
C
=150°C13
7.5 L=4.7m H, T
C
=150°C14
6L=8.7m H, T
C
=150°C
T
J
=150
o
C,
t
SC
Short Circuit Withst and Ti m e 120 µs V
CC
= 16V, L = 10µH 14
R
G
= 1K ohm, V
GE
= 5V
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 3
Fi g.4 - Typi cal V
CE
vs T
J
V
GE
=4.5V
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-50 0 50 100 150 200
T
J
(°C)
V
C E
( V )
I
C
= 7A
I
C
= 10A
Fig. 3 - Tr an sfer Cha r acteristi cs
V
CE
=20V; tp=20µs
0
10
20
30
40
50
60
70
80
90
100
0246810
V
GE
(V)
I
C E
( A )
T
J
= 25°C
T
J
= 125°C
Fig.1 - Typ. Output Characteristics
TJ=25°C
0
10
20
30
40
50
60
0123456
VCE (V)
I
C
( A )
VGE = 10 V
VGE = 5.0V
VGE = 4.5V
VGE = 4.0V
VGE = 3.7V
Fig.2 - Typ. Ou tp ut Ch ara cterist ic s
T
J
=125°C
0
10
20
30
40
50
60
0123456
V
CE
(V)
I C ( A )
V
GE
= 10 V
V
GE
= 5.0V
V
GE
= 4.5V
V
GE
= 4.0V
V
GE
= 3.7V
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 4
Fi g.7 - Typ. Gat e C ha rge v s V
GE
I
C
=10A; V
CE
= 12V ; V
GE
=5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
0 5 10 15 20 25 30
Q
G
, Total Gat e Cha r ge (nC)
V G E ( V )
Fig.6 - Typ. Capacitance vs V
CE
V
GE
=0V; V
CE
=25V; f=1MHz
1
10
100
1000
110100
V
CE
(V)
C a p a c i t a n c e ( p F )
C
ies
C
res
C
oes
Fi g.8 - Typi c al V
CE
vs V
GE
0
2
4
6
8
10
12
14
16
18
20
2.533.544.5
V
GE
(V)
V
C E
( V )
I
C
= 7A; 125°C
I
C
= 7A; 25°C
I
C
=1 0A ; 125°C
I
C
=10A; 25°C
Fi g .5 - Typi cal V
GE(th)
vs T
J
I
C
=1mA
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 0 50 100 150 200
T
J
(°C)
V
G E ( t h )
( V )
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 5
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1 . Du ty fac tor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Re ct a ng ul a r Pu lse Duratio n (s e c)
T hermal Response(Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMA L RES P O NSE )
Fig.11 - Transient Thermal Impedance, Junction-to-Case
Fig.9 - Self-clamp Avalan ce Current vs
Inductance @ 25°C
10
15
20
25
30
35
40
012345
Inductance (mH)
O p e n - s e c o n d a r y C u r r e n t ( A )
Minimum
Typical
Fig.10 - Self-clamp Avalance Curren t
vs Indu ctance @ 150°C
4
6
8
10
12
14
16
18
20
0246810
Inductance (m H)
O p e n - s e c o n d a r y C u r r e n t ( A )
Minimum
Typical
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 6
Fi g .13 - Se lf-cl amped Induct iv e Switching Wav eform
L=4.7mH; T
C
=25°C; used circuit in Fig.14
0
2
4
6
8
10
12
-2.E-05 -1.E-05 0.E+00 1.E-05 2.E-05 3.E-05 4.E-05 5.E-05 6.E-05
time
I
C E
( A )
-100
0
100
200
300
400
500
V
c l a m p
( V )
V clamp
I CE
Fig.12 - Switching Wav eform for Tim e Measurem ent
V
GE
= 5V; R
G
= 1KΩ; L= 1mH; V
CE
= 14V; u s ed cir cuit in Fig.14
-50
0
50
100
150
200
250
300
350
400
450
-14 -10 -6 -2 2 6 10 14
t (µs)
V c l a m p ( V )
-2
-1
0
1
2
3
4
5
6
7
8
V G E ( V )
V
cl (measured)
VClamp
VGE
t
d (o f f )
t
r
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 7
1K
VCC
DUT
0
L
Fig.15 - Gate Charge Circuit
Fig.14 - Test Circuit
L
0.47 Ω
D.U.T.
Ice
1KΩ
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 8
10.16 (.400)
REF.
6.47 (.255)
6.18 (.243)
2.61 (.103)
2.32 (.091)
8.89 (.350)
REF.
- B -
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1.39 (.055)
1.14 (.045)
5.28 (.208)
4.78 (.188)
4.69 (.185)
4.20 (.165)
10.54 (.415)
10.29 (.405)
- A -
2
1 3 15.49 (.610)
14.73 (.580)
3X 0.93 (.037)
0.69 (.027)
5.08 (.200)
3X 1.40 (.055)
1.14 (.045)
1.78 (.070)
1.27 (.050)
1.40 (.055)
MAX.
NOTES:
1 DIMENSIONS AFTER SOLDER DIP.
2 DIM EN SI O NING & T OLER ANCING PER ANSI Y1 4.5M, 1 9 82.
3 CONTROLLING DI M ENSI O N : INCH.
4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BU RRS.
0.55 (.022)
0.46 (.018)
0.25 (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
17.78 (.700)
3.81 (.150)
2.08 (.0 8 2)
2X
LEAD ASSIGNMENT S
1 - GATE
2 - DRAIN
3 - SOURCE
2.54 (.100)
2X
TO-263AB Package Outline
Dimensions are shown in millimeters (inches)
www.irf.com 4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 9
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (. 063)
1.50 (. 059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DI MENSION: MILLIM ETER.
3. DIMENSION MEASU RED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
TO-263AB Package Outline in Tape and Reel
Dimensions are shown in millimeters (inches)
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IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 10
TO-262AA Package Outline
Dimensions are shown in millimeters (inches)
www.irf.com 4/7/2000
IRGS14C40L
IRGSL14C40L
IRGB14C40L
Ignition IGBT
Page 11
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1.32 (.052)
1.22 (.048)
3X 0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
4.69 (.185)
4.20 (.165)
3X 0.93 (.037)
0.69 (.027)
4.06 (.160)
3.55 (.140)
1.15 (.045)
MIN
6.47 (.255)
6.10 (.240)
3.78 (.149)
3.54 (.139)
- A -
10 . 54 ( . 41 5 )
10 . 29 ( . 40 5 )
2.87 (.113)
2.62 (.103)
15.24 (.600)
14.84 (.584)
14.09 (.555)
13.47 (.530)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0.36 (.014) M B A M
4
1 2 3
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLI NE TO-220AB.
2 CONTROLLING DI MENSION : I NCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
