MOC8111X,MOC8112X,MOC8113X MOC8111, MOC8112, MOC8113 NON-BASE LEAD OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead forms : - STD - G form - SMD approved to CECC 00802 l BSI approved - Certificate No. 8001 7.0 6.0 FEATURES l Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. l High Isolation Voltage (5.3kVRMS ,7.5kVPK ) l Base pin unconnected for improved noise immunity in high EMI environment 1 2 6 5 3 4 1.2 7.62 6.62 DESCRIPTION The MOC8111, MOC8112, MOC8113 series of optically coupled isolators consist of infrared light emitting diode and NPN silicon photo transistor in a standard 6 pin dual in line plastic package with the base pin unconnected. Dimensions in mm 2.54 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -55C to + 150C Operating Temperature -55C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE APPLICATIONS l DC motor controllers l Industrial systems controllers l Signal transmission between systems of different potentials and impedances Forward Current Reverse Voltage Power Dissipation 60mA 6V 105mW OUTPUT TRANSISTOR OPTION SM OPTION G SURFACE MOUNT 7.62 Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 30V 6V 160mW POWER DISSIPATION 0.6 0.1 10.46 9.86 1.25 0.75 0.26 Total Power Dissipation 200mW (derate linearly 2.67mW/C above 25C) 10.16 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 31/3/03 DB92197m-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.15 1.5 V IF = 10mA 10 A VR = 6V V IC = 1mA V nA IE = 100A VCE = 10V mA mA mA 10mA IF , 10V VCE 10mA IF , 10V VCE 10mA IF , 10V VCE V 10mA IF , 0.5mA IC Input to Output Isolation Voltage VISO 5300 7500 VRMS VPK See note 1 See note 1 Input-output Isolation Resistance RISO 5x1010 VIO = 500V (note 1) s s VCC = 5V , IF = 10mA RL = 75 (FIG 1) Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Output Collector Current ( IC ) MOC8111 MOC8112 MOC8113 30 6 50 2 5 10 Collector-emitter Saturation VoltageVCE (SAT) Response Time (Rise), tr Response Time (Fall), tf Note 1 Note 2 TEST CONDITION 0.15 2 2 0.4 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE1 31/3/03 DB92197m-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage TA = 25C 50 Collector current IC (mA) Collector power dissipation PC (mW) 200 150 100 50 50 30 40 20 30 15 20 10 10 IF = 5mA 0 0 -30 0 25 50 75 100 0 125 Forward Current vs. Ambient Temperature 70 280 Current transfer ratio CTR (%) 320 60 50 40 30 20 0 8 10 VCE = 10V TA = 25C 240 200 MOC8113 160 120 MOC8112 80 MOC8111 40 0 -30 0 25 50 75 100 1 125 2 Ambient temperature TA ( C ) Collector-emitter saturation voltage VCE(SAT) (V) 1.5 IF = 10mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 Ambient temperature TA ( C ) 5 10 20 50 Forward current IF (mA) Relative Current Transfer Ratio vs. Ambient Temperature Relative current transfer ratio 6 Current Transfer Ratio vs. Forward Current 80 10 31/3/03 4 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( C ) Forward current IF (mA) 2 100 Collector-emitter Saturation Voltage vs. Ambient Temperature 0.14 0.12 IF = 10mA IC = 0.5mA 0.10 0.08 0.06 0.04 0.02 0 -30 0 25 50 75 100 Ambient temperature TA ( C ) DB92197m-AAS/A2