ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
Tel: (01429) 863609 Fax :(01429) 863581
31/3/03
OPTION G
7.62
APPROVALS
lUL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
ll VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
lBSI approved - Certificate No. 8001
DESCRIPTION
The MOC8111, MOC8112, MOC8113 series of
optically coupled isolators consist of infrared
light emitting diode and NPN silicon photo
transistor in a standard 6 pin dual in line plastic
package with the base pin unconnected.
FEATURES
lOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
lHigh Isolation Voltage (5.3kVRMS ,7.5kVPK )
lBase pin unconnected for improved noise
immunity in high EMI environment
APPLICATIONS
lDC motor controllers
lIndustrial systems controllers
lSignal transmission between systems of
different potentials and impedances
0.26
0.5
1
3 4
6
Dimensions in mm
SURFACE MOUNT
OPTION SM
10.16
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
0.26
7.62
6.62
2 5
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature -55°C to + 150°C
Operating Temperature -55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 60mA
Reverse Voltage 6V
Power Dissipation 105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 30V
Emitter-collector Voltage BVECO 6V
Power Dissipation 160mW
POWER DISSIPATION
Total Power Dissipation 200mW
(derate linearly 2.67mW/°C above 25°C)
MOC8111X,MOC8112X,MOC8113X
MOC8111, MOC8112, MOC8113
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
0.5
10.46
9.86
0.6
0.1 1.25
0.75
DB92197m-AAS/A2
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (VF)1.15 1.5 VIF = 10mA
Reverse Current (IR)10 µA VR = 6V
Output Collector-emitter Breakdown (BVCEO)30 VIC = 1mA
( Note 2 )
Emitter-collector Breakdown (BVECO) 6 VIE = 100µA
Collector-emitter Dark Current (ICEO)50 nA VCE = 10V
Coupled Output Collector Current ( IC )
MOC8111 2mA 10mA IF , 10V VCE
MOC8112 5mA 10mA IF , 10V VCE
MOC8113 10 mA 10mA IF , 10V VCE
Collector-emitter Saturation VoltageVCE (SAT) 0.15 0.4 V10mA IF , 0.5mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Response Time (Rise), tr 2µsVCC = 5V , IF = 10mA
Response Time (Fall), tf 2µsRL = 75Ω (FIG 1)
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
31/3/03
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
DB92197m-AAS/A2
FIGURE 1
31/3/03
50
Ambient temperature TA ( °C )
150
0
200
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
-30 0 25 50 75 100
100
0
0.5
1.0
1.5 IF = 10mA
VCE = 10V
Forward current IF (mA)
0
80
120
160
200
240
40
280
320
Forward current IF (mA)
Current Transfer Ratio vs. Forward Current
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative current transfer ratio
Current transfer ratio CTR (%)
MOC8112
VCE = 10V
TA = 25°C
70
80
1 2 5 10 20 50
Collector Current vs. Collector-emitter Voltage
Collector-emitter voltage VCE ( V )
Collector current IC (mA)
0 2 4 6 8 10
0
10
20
30
40
50 TA = 25°C
IF = 5mA
10
15
20
30
50
MOC8111
MOC8113
-30 0 25 50 75 100 125
Ambient temperature TA ( °C ) Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
IF = 10mA
IC = 0.5mA
-30 0 25 50 75 100
DB92197m-AAS/A2
