pF
V
F
C
T
250
V
R
TEST CONDITION
I
F
= 1mA
V
R
= 40V
I
F
= 10mA
Power Dissipation T
a
= 25
o
C
P
D
DESCRIPTION
SYMBOL
Storage Temperature Range
40
MIN
I
F
Surge Forward Current t=10ms
I
FSM
120
40
I
R
= 10uA
- 55 to +150
150
VALUE
MAX
0.38
V
R
= 30V
1
UNITS
K/W
430
Junction Temperature
mA
mW
Tstg
o
C
Tj
200
DESCRIPTION
SYMBOL
UNITS
Forward Current
V
mA
V
R
*Mounted on a ceramic substrate of 10mm x 8mm x 0.6mm
Thermal Resistance
From junction to ambient
R
th(j-a)*
Reverse Voltage
5.00
Reverse Current
I
R
V
R
= 40V
10
0.50
Forward Voltage
Diode Capacitance
Reverse Braekdown Voltage
V
uA
I
F
= 40mA
1.00
V
SILICON PLANAR SCHOTTKY DIODE
BAS40
BAS40-04
BAS40-05
BAS40-06
Electrical Characteristics
(Ta=25
o
C unless otherwise specified) (per diode)
Absolute Maximum Ratings
(per diode)
Unit: inch (mm)
SOT-23 SMD Package
Pin Configuration:
1. ANODE
2. CATHODE
3. ANODE/CATHODE
Pin Configuration:
1. ANODE
2. NC
3. CATHODE
Pin Configuration:
1. ANODE
2. ANODE
3. CATHODE
Pin Configuration:
1. CATHODE
2. CATHODE
3. ANODE
General Purpose Schottky Diode for High Speed switching
www.rectron.com
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