KSD-T0O012-000 1
STK0250F
Advanced Power MOSFET
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SWITCHING REGULATOR APPLICATIONS
Features
• High Voltage : BVDSS=500V(Min.)
• Low Crss : Crss=6.5pF(Typ.)
• Low gate charge : Qg=8.5nC(Typ.)
• Low RDS(on) : RDS(on)=3.3Ω(Max.)
Ordering Information
Type NO. Marking Package Code
STK0250F STK0250 TO-220F-3L
Outline Dimensions unit : mm
9.80~10.20
15.40~15.80
Φ3.05~3.35
12.20~12.60
9.10~9.30
3.46 Typ.
1.07 Min.
0.90 Max.
2.54 Typ. 2.54 Typ.
4.70 Max.
2.70 Max.
0.60 Max.
1 2 3
0.60 Max.
2.60~3.00
PIN Connections
1. Gate
2. Drain
3. Source
KSD-T0O012-000 2
STK0250F
Absolute maximum ratings (Tc=25°C)
Characteristic Symbol Rating Unit
Drain-source voltage VDSS 500 V
Gate-source voltage VGSS ±30 V
(Tc=25℃) 2.0 A
Drain current (DC) ID (Tc=100℃) 1.7 A
Drain current (Pulsed) * I
DP 8.0 A
Drain Power dissipation PD 22 W
Avalanche current (Single) ② IAS 2.0 A
Single pulsed avalanche energy ② EAS 59 mJ
Avalanche current (Repetitive) ① IAR 2.0 A
Repetitive avalanche energy ① EAR 3.0 mJ
Junction temperature TJ 150
Storage temperature range Tstg -55~150
°C
* Limited by maximum junction temperature
Characteristic Symbol Typ. Max Unit
Junction-case Rth(J-C) - 5.7
Thermal
resistance Junction-ambient Rth(J-a) - 62.5
℃/W
KSD-T0O012-000 3
STK0250F
Electrical Characteristics (Tc=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 500 - - V
Gate-threshold voltage VGS(th) ID=250µA, VDS= VGS 3.0 - 5.0 V
Drain-source leakage current IDSS V
DS=500V, VGS=0V - - 1
µA
Gate-source leakage IGSS VDS=0V, VGS=±30V - -
±100 nA
Drain-Source on-resistance ④ RDS(ON) V
GS=10V, ID=1.0A - 3.1 3.4
Ω
Forward transfer admittance ④ gfs V
DS=10V, ID=1.0A - 1.4 - S
Input capacitance Ciss - 268 402
Output capacitance Coss - 13 19.5
Reverse transfer capacitance Crss
VGS=0V, VDS=25V, f=1MHz
- 6.5 9.8
pF
Turn -o n de lay ti me td(on) - 8.5 -
Rise time tr - 10.2 -
Turn-off delay time td(off) - 19 -
Fall time tf
VDD=250V, VGS=10V
ID=2.0A, RG=25Ω
③④
- 10.2 -
ns
Total gate charge Qg - 8.5 12.8
Gate-source charge Qgs - 1.7 2.6
Gate-drain charge Qgd
VDD=250V, VGS=10V
ID=2.0A
③④ - 3.0 4.5
nC
Source-Drain Diode Ratings and Characteristics (Tc=25°C)
Characteristic Symbol Test Condition Min Typ Max Unit
Continuous source current IS - - 2
Source current (Pulsed) ① ISP
Integral reverse diode
in the MOSFET - - 8
A
Forward voltage ④ VSD V
GS=0V, IS=2.0A - - 1.4 V
Reverse recovery time trr - 200 - ns
Reverse recovery charge Qrr
Is=2.0A, VGS=0V
dis/dt=100A/us - 0.7 - uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=26.5mH, IAS=2.0A, VDD=50V, RG=25Ω
③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T0O012-000 4
STK0250F
℃
Fig. 5 Capacitance - VDS
-
:
℃
Fig. 1 ID - VDS
Fig. 4 IS - VSD
Fig. 3 RDS
(
on
)
- ID
Fig. 6 VGS - QG
Electrical Characteristic Curves
Fig. 2 ID - VGS
KSD-T0O012-000 5
STK0250F
ㅋ
`
C
Fig. 8 RDS(on) - TJ
C
Fig. 7 VDSS - TJ
*
Fig. 10 Safe Operating Area
Fig. 9 I
D - TC
KSD-T0O012-000 6
STK0250F
Fig. 11 Gate Charge Test Circuit & Waveform
Fig. 12 Resistive Switching Test Circuit & Waveform
Fig. 13 E
AS Test Circuit & Waveform
KSD-T0O012-000 7
STK0250F
Fig. 14 Diode Reverse Recovery Time Test Circuit & Waveform
KSD-T0O012-000 8
STK0250F
The AUK Corp. products are intended for the use as components in general electronic
equipment (Office and communication equipment, measuring equipment, home
appliance, etc.).
Please make sure that you consult with us before you use these AUK Corp. products
in equipments which require high quality and / or reliability, and in equipments which
could have major impact to the welfare of human life(atomic energy control, airplane,
spaceship, transportation, combustion control, all types of safety device, etc.). AUK
Corp. cannot accept liability to any damage which may occur in case these AUK Corp.
products were used in the mentioned equipments without prior consultation with AUK
Corp..
Specifications mentioned in this publication are subject to change without notice.
