AUIRFZ44NS
AUIRFZ44NL
VDSS 55V
RDS(on) max. 17.5m
ID 49A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and
power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Features
Advanced Planar Technology
Low On-Resistance
Dynamic dV/dT and dI/dT capability
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications
1 2015-10-27
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 49
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 35
IDM Pulsed Drain Current 160
PD @TA = 25°C Maximum Power Dissipation 3.8 W
PD @TC = 25°C Maximum Power Dissipation 94
Linear Derating Factor 0.63 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS (Thermally Limited) Single Pulse Avalanche Energy (Thermally Limited) 150
EAS (Tested) Single Pulse Avalanche Energy (Tested Limited) 530
IAR Avalanche Current 25 A
EAR Repetitive Avalanche Energy 9.4 mJ
dv/dt Peak Diode Recovery 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.5 °C/W
RJA Junction-to-Ambient (PCB Mount), D2 Pak ––– 40
D2Pak
AUIRFZ44NS
TO-262
AUIRFZ44NL
S
D
G
S
D
G
D
Base part number Package Type Standard Pack
Form Quantity
AUIRFZ44NL TO-262 Tube 50 AUIRFZ44NL
AUIRFZ44NS D2-Pak Tube 50 AUIRFZ44NS
Tape and Reel Left 800 AUIRFZ44NSTRL
Orderable Part Number
G D S
Gate Drain Source
HEXFET® Power MOSFET