
AUIRFZ44NS/L
2 2015-10-27
Notes:
Repetitive rating; pulse width limited by max. junction temperature. (See fig.11)
Limited by TJmax, starting TJ = 25°C, L = 0.48mH, RG = 25, IAS = 25A, VGS =10V. (See fig.12)
I
SD 25A, di/dt 230A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
This is a typical value at device destruction and represents operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 17.5 m VGS = 10V, ID = 25A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 19 ––– ––– S VDS = 25V, ID = 25A
IDSS Drain-to-Source Leakage Current ––– ––– 25 µA VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 63
nC
ID = 25A
Qgs Gate-to-Source Charge ––– ––– 14 VDS = 44V
Qgd Gate-to-Drain Charge ––– ––– 23 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 –––
ns
VDD = 28V
tr Rise Time ––– 60 ––– ID = 25A
td(off) Turn-Off Delay Time ––– 44 ––– RG= 12
tf Fall Time ––– 45 ––– VGS = 10V, See Fig. 10
LD Internal Drain Inductance ––– 4.5 ––– Between lead,
6mm (0.25in.)
LS Internal Source Inductance ––– 7.5 ––– from package
and center of die contact
Ciss Input Capacitance ––– 1470 ––– VGS = 0V
Coss Output Capacitance ––– 360 ––– pFVDS = 25V
Crss Reverse Transfer Capacitance ––– 88 ––– ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current ––– ––– 49
A
MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current ––– ––– 160 integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 25A,VGS = 0V
trr Reverse Recovery Time ––– 63 95 ns TJ = 25°C ,IF = 25A
Qrr Reverse Recovery Charge ––– 170 260 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
nH