VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 1Document Number: 94286
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Schottky Rectifier, 16 A
FEATURES
150 °C TJ operation
Low forward voltage drop
High frequency operation
High purity, high temperature epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
The VS-MBR16... Schottky rectifier has been optimized for
low reverse leakage at high temperature. The proprietary
barrier technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
PRODUCT SUMMARY
Package TO-220AC
IF(AV) 16 A
VR35 V, 45 V
VF at IF0.57 V
IRM max. 40 mA at 125 °C
TJ max. 150 °C
Diode variation Single die
EAS 24 mJ
Anode
13
Cathode
Base
cathode
2
TO-220AC
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
IF(AV) Rectangular waveform 16 A
VRRM 35/45 V
IFSM tp = 5 μs sine 1800 A
VF16 Apk, TJ = 125 °C 0.57 V
TJRange - 65 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-MBR1635PbF VS-MBR1635-N3 VS-MBR1645PbF VS-MBR1645-N3 UNITS
Maximum DC reverse
voltage VR
35 35 45 45 V
Maximum working peak
reverse voltage VRWM
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current IF(AV) TC = 134 °C, rated VR16 A
Non-repetitive peak surge current IFSM
5 µs sine or 3 µs rect. pulse
Following any rated load
condition and with rated
VRRM applied
1800
A
Surge applied at rated load condition half wave
single phase, 60 Hz 150
Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 3.6 A, L = 3.7 mH 24 mJ
Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical 3.6 A
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 2Document Number: 94286
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop VFM (1) 16 A TJ = 25 °C 0.63 V
TJ = 125 °C 0.57
Maximum instantaneous reverse current IRM (1) TJ = 25 °C Rated DC voltage 0.2 mA
TJ = 125 °C 40
Maximum junction capacitance CTVR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
Typical series inductance LSMeasured from top of terminal to mounting plane 8.0 nH
Maximum voltage rate of change dV/dt Rated VR10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 65 to 150 °C
Maximum storage temperature range TStg - 65 to 175
Maximum thermal resistance,
junction to case RthJC DC operation 1.50
°C/W
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.50
Approximate weight 2g
0.07 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style TO-220AC (JEDEC) MBR1635
MBR1645
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 3Document Number: 94286
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1
10
1.20.4
V
FM
- Forward Voltage Drop (V)
I
F
- Instantaneous Forward Current (A)
100
0 0.2 0.6 0.8
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1.0
0.1
1
10
100
0.01
0.001
0
V
R
- Reverse Voltage (V)
I
R
- Reverse Current (µA)
15 35 4525
0.0001
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
510 20 30 40
1000
020 50
100
V
R
- Reverse Voltage (V)
C
T
- Junction Capacitance (pF)
10 30 40
TJ = 25 °C
10 000
0.001
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
t1 - Rectangular Pulse Duration (s)
ZthJC - Thermal Impedance (°C/W)
1 10
0.01
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
Single pulse
(thermal resistance)
.
PDM
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 4Document Number: 94286
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Fig. 8 - Unclamped Inductive Test Circuit
Note
(1) Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR applied
120
025
I
F(AV)
- Average Forward Current (A)
Allowable Case Temperature (°C)
125
140
135
155
150
130
145
2015105
DC
See note (1)
Square wave (D = 0.50)
Rated VR applied
15
0
025
Average Power Loss (W)
IF(AV) - Average Forward Current (A)
5 101520
5
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
RMS limit
DC
1000
100 1000
t
p
- Square Wave Pulse Duration (µs)
I
FSM
- Non-Repetitive Surge Current (A)
100
10 00010
At any rated load condition
and with rated VRRM applied
following surge
10 000
Current
monitor
High-speed
switch
D.U.T.
Rg = 25 Ω
+
Freewheel
diode Vd = 25 V
L
IRFP460
40HFL40S02
VS-MBR16...PbF Series, VS-MBR16...-N3 Series
www.vishay.com Vishay Semiconductors
Revision: 29-Aug-11 5Document Number: 94286
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
ORDERING INFORMATION (Example)
PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MBR1635PbF 50 1000 Antistatic plastic tube
VS-MBR1635-N3 50 1000 Antistatic plastic tube
VS-MBR1645PbF 50 1000 Antistatic plastic tube
VS-MBR1645-N3 50 1000 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95221
Part marking information TO-220AC PbF www.vishay.com/doc?95224
TO-220AC -N3 www.vishay.com/doc?95068
- Schottky MBR series
- Current rating (16 = 16 A)
- Voltage ratings 35 = 35 V
45 = 45 V
Device code
2 43 5
MBR 16 45 PbFVS-
1
-Vishay Semiconductors product
-
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
Environmental digit
2
3
4
5
1
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
TO-220AC
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters and inches
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimension: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
SYMBOL MILLIMETERS INCHES NOTES SYMBOL MILLIMETERS INCHES NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
13
2
D
D1
H1
Q
Detail B
C
A
B
L
e1
Lead tip
L4
L3
E
E2
Ø P
0.015 AB
MM
0.014 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
Conforms to JEDEC outline TO-220AC
(6)
(6)
(7)
(6)
(7)
View A - A
θ
E1 (6)
D2 (6)
H1
Thermal pad
E
Detail B
D
L1
D
123
CC
2 x b2 2 x b
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Revision: 12-Mar-12 1Document Number: 91000
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