VDRM ITGQM ITSM VT0 rT VDClin = = = = = = 4500 4000 25 1.08 0.29 2800 V A kA V Gate turn-off Thyristor 5SGT 40L4502 m V MARKETING INFORMATION Doc. No. 5SYA 1235-00 Aug. 2000 * Patented free-floating silicon technology * Low on-state and switching losses * Annular gate electrode * Industry standard housing * Cosmic radiation withstand rating The 5SGT 40L4502 is an 91 mm buffered layer, Transparent Emitter (non-shorted anode) GTO with exceptionally low dynamic and static losses and gate drive requirements. Housed in an industry-standard 120 mm wide housing, it is ideally suited for high reliability applications as Transportation and Medium Voltage Drives. Blocking VGR 2V VDRM Repetitive peak off-state voltage 4500 V VRRM Repetitive peak reverse voltage 17 V IDRM Repetitive peak off-state current 100 mA VD = VDRM VGR 2V IRRM Repetitive peak reverse current 50 mA VR = VRRM RGK = VDClink Permanent DC voltage for 100 2800 V FIT failure rate 0 Tj 125 C. Ambient cosmic radiation at sea level in open air. Mechanical data (see Fig. 19) Fm Mounting force A min. 36 kN max. 44 kN Acceleration: Device unclamped Device clamped 50 m/s2 200 m/s2 M Weight 1.5 kg DS Surface creepage distance 33 mm Da Air strike distance 14 mm ABB Semiconductors AG reserves the right to change specifications without notice. 5SGT 40L4502 GTO Data On-state ITAVM Max. average on-state current 1600 A ITRMS Max. RMS on-state current 2500 A ITSM Max. peak non-repetitive 25 kA tP = 10 ms surge current 45 kA tP = 1 ms After surge: 2 3.13106 A s tP = 10 ms VD = VR = 0V 2 1.01106 A s tP = 1 ms 4000 A I2t Limiting load integral Half sine wave, TC = 85 C VT On-state voltage 2.24 V IT = VT0 Threshold voltage 1.08 V IT = 400 - 4000 A rT Slope resistance 0.29 m IH Holding current 100 A Tj = 25 C VGT Gate trigger voltage 1.4 V VD = 24 V IGT Gate trigger current 1.5 A RA = 0.1 VGRM Repetitive peak reverse voltage 17 V IGRM Repetitive peak reverse current 20 mA VGR = VGRM Tj = Tj = 125C 125 C Gate Tj = 25 C Turn-on switching di/dtcrit Max. rate of rise of on-state current 500 A/s f = 200Hz IT = 4000 A, 1000 A/s f = 1Hz IGM = 25 A, diG/dt = 25 A/s td Delay time 2.5 s VD = tr Rise time 5.0 s IT ton(min) Min. on-time Eon Turn-on energy per pulse 0.5 VDRM Tj Tj = 125 C = 125 C = 4000 A di/dt = 300 A/s 100 s IGM = 25 A diG/dt = 25 A/s 3.00 Ws CS = 4000 A VDM = VDRM 6 F RS = 5 Turn-off switching ITGQM Max controllable turn-off current diGQ/dt = 40 A/s CS = 6 F LS 0.2 H 25.0 s VD = 1/2 VDRM VDM = VDRM Tj = ts Storage time tf Fall time 3.0 s toff(min) Min. off-time 100 s ITGQ = ITGQM Eoff Turn-off energy per pulse 12.0 Ws CS = IGQM Peak turn-off gate current 1000 A LS 125 C diGQ/dt = 6 F RS = 40 A/s 5 0.2 H ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 2 of 9 5SGT 40L4502 Thermal Tj Storage and operating 0...125C junction temperature range RthJC RthCH Thermal resistance 20 K/kW Anode side cooled junction to case 25 K/kW Cathode side cooled 11 K/kW Double side cooled 5 K/kW Single side cooled Thermal resistance case to heat sink 2.5 K/kW Double side cooled Analytical function for transient thermal impedance: 4 Z thJC (t) = R (1 - e i - t / i ) i 1 2 3 4 RI (K/kW) 6.89 3.49 0.61 0.0001 i (s) 2.01 0.26 0.003 0.001 i=1 ZthJC [K/kW] 12 Double Side Cooling Fm = 36...44 kN 10 8 6 4 5SGT 40L4502 2 0 10-3 2 3 4 5 6 7 10-2 2 3 4 5 6 7 10-1 2 3 4 5 5 67 100 2 3 4 5 6 78 101 2 3 4 5 6 78 102 t [ms] Fig. 1 Transient thermal impedance, junction to case. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 3 of 9 5SGT 40L4502 IT [A] 4000 125C 3500 typ. 3000 max. 2500 2000 1500 1000 500 0 0.6 0.9 1.2 1.5 1.8 2.1 2.4 VT [V] Fig. 2 On-state characteristics Fig. 4 Surge current and fusing integral vs. pulse width Fig. 3 Average on-state power dissipation vs. average on-state current. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 4 of 9 5SGT 40L4502 Fig. 5 Forward blocking voltage vs. gate-cathode resistance. Fig. 7 Forwarde gate current vs. forard gate voltage. Fig. 6 Static dv/dt capability: Forward blocking voltage vs. neg. gate voltage or gate cathode resistance. Fig. 8 Gate trigger current vs. junction temperature ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 5 of 9 5SGT 40L4502 Fig. 9 Turn-on energy per pulse vs. on-state current and turn-on voltage. Fig. 10 Turn-on energy per pulse vs. on.-state current and current rise rate Common Test conditions for figures 9, 10 and 11: diG/dt CS = 25 A/s = 6 F RS =5 Tj = 125 C Definition of Turn-on energy: 20 s E on = V D ITdt (t = 0, IG = 0.1 IGM ) 0 Common Test conditions for figures 12, 13 and 15: Definition of Turn-off energy: E off = 40 s V D ITdt ( t = 0, IT = 0.9 ITGQ ) 0 Fig. 11 Turn-on energy per pulse vs. on-state current and turn-on voltage. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 6 of 9 Preliminary Data 5SGT 40L4502 5SGT 40L4502 Fig. 12 Turn-off energy per pulse vs. turn-off current and peak turn-off voltage. Extracted gate charge vs. turn-off current. Fig. 13 Turn-off energy per pulse vs. turn-off current and snubber capacitance. Fig. 14 Required snubber capacitor vs. max allowable turn-off current. Fig. 15 Turn-off energy per pulse, storage time and peak turn-off gate current vs. junction temperature Fig. 16 Storage time and peak turn-off gate current vs. neg. gate current rise rate. Fig. 17 Storage time and peak turn-off gate current vs. turn-off current ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 7 of 9 5SGT 40L4502 Fig. 18 General current and voltage waveforms with GTO-specific symbols Fig. 19 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. ABB Semiconductors AG reserves the right to change specifications without notice. Doc. No. 5SYA 1235-00 Aug. 2000 page 8 of 9 5SGT 40L4502 Reverse avalanche capability In operation with an antiparallel freewheeling diode, the GTO reverse voltage VR may exceed the rate value VRRM due to stray inductance and diode turn-on voltage spike at high di/dt. The GTO is then driven into reverse avalanche. This condition is not dangerous for the GTO provided avalanche time and current are below 10 s and 1000 A respectively. However, gate voltage must remain negative during this time. Recommendation : VGR = 10... 15 V. ABB Semiconductors AG reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 2 CH-5600 Lenzburg, Switzerland Tel: Fax: E-mail Internet +41 (0)62 888 6419 +41 (0)62 888 6306 info@ch.abb.com www.abbsem.com Doc. No. 5SYA 1235-00 Aug. 2000