© 2005 IXYS All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA 150 V
VGS(th) VDS = VGS, ID = 250µA 3.0 5.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS 25 µA
VGS = 0 V TJ = 175°C 500 µA
RDS(on) VGS = 10 V, ID = 0.5 ID25 16 m Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C 150 V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ150 V
VDSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C 120 A
ID(RMS) External lead current limit 75 A
IDM TC= 25°C, pulse width limited by TJM 260 A
IAR TC= 25°C60A
EAR TC= 25°C60mJ
EAS TC= 25°C 2.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS, 10 V/ns
TJ≤ 150°C, RG = 4 Ω
PDTC= 25°C 600 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 s 260 °C
MdMounting torque (TO-3P) 1.13/10 Nm/lb.in.
Weight TO-3P 5.5 g
TO-268 5.0 g
G = Gate D = Drain
S = Source TAB = Drain
DS99280E(10/05)
PolarHTTM
Power MOSFET
IXTQ 120N15P VDSS = 150 V
IXTT 120N15P ID25 = 120 A
RDS(on) ≤ ≤
≤ ≤
≤ 16 mΩΩ
ΩΩ
Ω
N-Channel Enhancement Mode
Avalanche Rated
Features
lInternational standard packages
lUnclamped Inductive Switching (UIS)
rated
lLow package inductance
- easy to drive and to protect
Advantages
lEasy to mount
lSpace savings
lHigh power density
TO-3P (IXTQ)
GDS(TAB)
TO-268 (IXTT)
GSD (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 120N15P
IXTT 120N15P
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
gfs VDS= 10 V; ID = 0.5 ID25, pulse test 40 60 S
Ciss 4900 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 pF
Crss 330 pF
td(on) 33 ns
trVGS = 10 V, VDS = 0.5 VDSS, ID = 60 A 42 ns
td(off) RG = 4 Ω (External) 85 ns
tf26 ns
Qg(on) 150 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 40 nC
Qgd 80 nC
RthJC 0.25°C/W
RthCS (TO-3P) 0.21 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0 V 120 A
ISM Repetitive 260 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = 25 A, -di/dt = 100 A/µs 150 ns
QRM VR = 100 V, VGS = 0 V 2.3 µC
TO-268 Outline
TO-3P (IXTQ) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2
© 2005 IXYS All rights reserved
IXTQ 120N15P
IXTT 120N15P
Fig. 2. Exte nded Output Characteristics
@ 25
º
C
0
40
80
120
160
200
240
280
012345678910
V
D S
- Volts
I
D
- Amperes
VGS
= 10V
7V
6V
8V
9V
Fig. 3. Output Characteristics
@ 150
º
C
0
20
40
60
80
100
120
01 23 45
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
5V
6V
7V
8V
Fig. 1. Output Characteristics
@ 25
º
C
0
20
40
60
80
100
120
00.511.5 22.5
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
9V
7V
6V
5V
8V
Fig. 4. R
DS(on
)
Norm alized to 0.5 I
D25
Value vs. Junction Tem perature
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 120A
I
D
= 60A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit
Fig. 5. R
DS(on)
Norm alized to 0.5 I
D25
Value vs. Drain Current
0.5
1
1.5
2
2.5
3
3.5
4
0 30 60 90 120 150 180 210 240 270 300
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 25ºC
V
GS
= 10V
T
J
= 175ºC
VGS = 15V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTQ 120N15P
IXTT 120N15P
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
iss
C
oss
C
rss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 20406080100120140160
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 75V
I
D
= 60A
I
G
= 10mA
Fig. 7. Input Admittance
0
30
60
90
120
150
180
210
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G S
- Volts
I
D
- Amperes
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
10
20
30
40
50
60
70
80
90
0 30 60 90 120 150 180 210 240 270
I
D
- Amperes
g f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Curre nt vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2005 IXYS All rights reserved
IXTQ 120N15P
IXTT 120N15P
Fig. 13. M axim um Transient The rm al Re s is tance
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse W idth - milliseconds
R( t h ) J C - ºC / W
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications.Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
