CREAT BY ART
- Dual rectifier construction, positive center-tap
- Glass passivated chip junctions
- Superfast recovery time, high voltage
- Low forward voltage, high current capability
- Low thermal resistance
- Low power loss, high efficiency
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - halogen-free
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
V
RRM
50 100 150 200 300 400 600 V
V
RMS
35 70 105 140 210 280 420 V
V
DC
50 100 150 200 300 400 600 V
I
F(AV)
A
Trr ns
Cj pF
R
θJC O
C/W
T
JO
C
T
STG O
C
Document Number: DS_D1401017 Version: G14
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: TO-247AD (TO-3P)
Polarity: As marked
SF3001PT thru SF3008PT
Taiwan Semiconductor
Glass Passivated Su
er Fast Rectifiers
FEATURES
SF
3001
PT
SF
3002
PT
SF
3003
PT
SF
3004
PT
SF
3005
PT
TO-247AD (TO-3P)
SF
3006
PT
SF
3008
PT
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Mounting torque: 10 in-lbs maximum
Weight: 5.6g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum reverse recovery time (Note 2)
SYMBOL
Maximum DC blocking voltage
Maximum average forward rectified current 30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
300
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
A
Maximum instantaneous forward voltage (Note 1)
I
F
= 15 A V
F
1.7 V
Typical thermal resistance 1.0
Operating junction temperature range
175
- 55 to +150
Storage temperature range - 55 to +150
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, Recover to 0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse Test with PW=300 μs, 1% Duty Cycle
0.95 1.3
10
500 μA
35
Typical junction capacitance (Note 3)