BUZ73LH - Infineon Technologies

Rev. 2.4 Page 1 2009-11-10

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• Logic Level

Pin 1 Pin 2 Pin 3

GDS

Type

V

DS

I

D

R

DS(on)Package Pb-free

BUZ 73 L H 200 V 7 A 0.4

Ω

PG-TO220-3 Yes

Maximum Ratings

Parameter Symbol Values Unit

Continuous drain current

T

C = 28 ˚C

I

D

7

A

Pulsed drain current

T

C = 25 ˚C

I

Dpuls

28

Avalanche current,limited by

T

jmax

I

AR 7

Avalanche energy,periodic limited by

T

jmax

E

AR 6.5 mJ

Avalanche energy, single pulse

I

D = 7 A,

V

DD = 50 V,

R

GS = 25

Ω

L

= 3.67 mH,

T

j = 25 ˚C

E

AS

120

Gate source voltage

V

GS

±

20 V

ESD-Sensitivity HBM as per MIL-STD 883 Class 1

Power dissipation

T

C = 25 ˚C

P

tot

40

W

Operating temperature

T

j -55 ... + 150 ˚C

Storage temperature

T

stg -55 ... + 150

Thermal resistance, chip case

R

thJC

≤

3.1 K/W

Thermal resistance, chip to ambient

R

thJA 75

DIN humidity category, DIN 40 040 E

IEC climatic category, DIN IEC 68-1 55 / 150 / 56

BUZ 73L H

Rev. 2.4 Page 2 2009-11-10

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain- source breakdown voltage

V

GS = 0 V,

I

D = 0.25 mA,

T

j = 25 ˚C

V

(BR)DSS

200 --

V

Gate threshold voltage

V

GS=

V

DS,

I

D = 1 mA

V

GS(th)

1.2 1.6 2

Zero gate voltage drain current

V

DS = 200 V,

V

GS = 0 V,

T

j = 25 ˚C

V

DS = 200 V,

V

GS = 0 V,

T

j = 125 ˚C

I

DSS

-

10

0.1

100

1

µA

Gate-source leakage current

V

GS = 20 V,

V

DS = 0 V

I

GSS - 10 100

nA

Drain-Source on-resistance

V

GS = 5 V,

I

D = 3.5 A

R

DS(on)

- 0.3 0.4

Ω

BUZ 73L H

Rev. 2.4 Page 3 2009-11-10

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

DS

≥

2 *

I

D *

R

DS(on)max,

I

D = 3.5 A

g

fs

5 6.5 -

S

Input capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

iss

- 630 840

pF

Output capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

oss

- 120 200

Reverse transfer capacitance

V

GS = 0 V,

V

DS = 25 V,

f

= 1 MHz

C

rss - 60 90

Turn-on delay time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

d(on)

- 15 20

ns

Rise time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

r

- 60 90

Turn-off delay time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

d(off)

- 100 130

Fall time

V

DD = 30 V,

V

GS = 5 V,

I

D = 3 A

R

GS = 50

Ω

t

f

- 40 50

BUZ 73L H

Rev. 2.4 Page 4 2009-11-10

Electrical Characteristics, at

T

j = 25˚C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

C = 25 ˚C

I

S

-- 7

A

Inverse diode direct current,pulsed

T

C = 25 ˚C

I

SM -- 28

Inverse diode forward voltage

V

GS = 0 V,

I

F = 14 A

V

SD

- 1.1 1.7

V

Reverse recovery time

V

R = 100 V,

I

F=

l

S, d

i

F/d

t

= 100 A/µs

t

rr

- 140 -

ns

Reverse recovery charge

V

R = 100 V,

I

F=

l

S, d

i

F/d

t

= 100 A/µs

Q

rr - 0.7 -

µC

BUZ 73L H

Rev. 2.4 Page 5 2009-11-10

Power dissipation

P

tot =

ƒ

(

T

C)

020 40 60 80 100 120 ˚C 160

T

C

0

5

10

15

20

25

30

35

W

45

P

tot

Drain current

I

D =

ƒ

(

T

C)

parameter:

V

GS

≥

5 V

020 40 60 80 100 120 ˚C 160

T

C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

6.5

A

7.5

I

D

Safe operating area

I

D =

ƒ

(

V

DS)

parameter:

D

= 0.01

, T

C = 25˚C

-1

10

0

10

1

10

2

10

A

I

D

10 0 10 1 10 2 V

V

DS

R

DS(on)

=

V

DS

/

I

D

DC

10 ms

1 ms

100 µs

t

p = 15.0µs

Transient thermal impedance

Z

th JC =

ƒ

(

t

p)

parameter:

D = t

p /

T

-3

10

-2

10

-1

10

0

10

1

10

K/W

Z

thJC

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0

s

t

p

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

BUZ 73L H

Rev. 2.4 Page 6 2009-11-10

Typ. output characteristics

I

D =

ƒ(

V

DS)

parameter:

t

p = 80 µs

02468V12

V

DS

0

2

4

6

8

10

12

A

16

I

D

V

GS [V]

a

a 2.0

b

b 2.5

c

c 3.0

d

d 3.5

e

e 4.0

f

f 4.5

g

g 5.0

h

h 5.5

i

i 6.0

j

j 7.0

k

k 8.0

l

P

tot = 40W

l 10.0

Typ. drain-source on-resistance

R

DS (on) =

ƒ(

I

D)

parameter:

V

GS

0246810 A13

I

D

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ω

1.3

R

DS (on)

V

GS [V] =

a

2.0

V

GS [V] =

a

2.5

b

3.0

c

3.5

d

4.0

e

4.5

f

5.0

g

5.5

h

6.0

i

7.0

j

8.0

k

10.0

Typ. transfer characteristics

I

D =

f

(

V

GS)

parameter:

t

p = 80 µs

V

DS

≥

2 x

I

D x

R

DS(on)max

012345678V10

V

GS

0

2

4

6

8

10

12

14

A

18

I

D

Typ. forward transconductance

g

fs =

f

(

I

D)

parameter:

t

p = 80 µs,

V

DS

≥

2 x

I

D

x R

DS(on)max

0246810 12 A15

I

D

0

1

2

3

4

5

6

7

8

9

10

S

12

g

fs

BUZ 73L H

Rev. 2.4 Page 7 2009-11-10

Drain-source on-resistance

R

DS (on) =

ƒ

(

T

j)

parameter:

I

D = 3.5 A,

V

GS = 5 V

-60 -20 20 60 100 ˚C 160

T

j

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

Ω

1.3

R

DS (on)

typ

98%

Gate threshold voltage

V

GS (th) =

ƒ

(

T

j)

parameter:

V

GS =

V

DS,

I

D = 1 mA

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

3.6

4.0

V

4.6

V

GS(th)

-60 -20 20 60 100 ˚C 160

T

j

2%

typ

98%

Typ. capacitances

C

=

f

(

V

DS)

parameter:

V

GS = 0V,

f

= 1MHz

0510 15 20 25 30 V40

V

DS

1

10

2

10

3

10

4

10

pF

C

iss

C

oss

C

rss

Forward characteristics of reverse diode

I

F =

ƒ

(

V

SD)

parameter:

T

j

, t

p = 80 µs

-1

10

0

10

1

10

2

10

A

I

F

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V3.0

V

SD

T

j = 25 ˚C typ

T

j = 25 ˚C (98%)

T

j = 150 ˚C typ

T

j = 150 ˚C (98%)

BUZ 73L H

Rev. 2.2 Page 8 2007-01-16

Avalanche energy

E

AS =

ƒ

(

T

j)

parameter:

I

D = 7 A,

V

DD = 50 V

R

GS = 25

Ω

,

L

= 3.67 mH

20 40 60 80 100 120 ˚C 160

T

j

0

10

20

30

40

50

60

70

80

90

100

110

mJ

130

E

AS

Typ. gate charge

V

GS =

ƒ

(

Q

Gate)

parameter:

I

D puls = 63 A

010 20 30 40 50 60 70 80 nC 100

Q

Gate

0

2

4

6

8

10

12

V

16

V

GS

DS max

V

0,8

DS max

V

0,2

Drain-source breakdown voltage

V

(BR)DSS =

ƒ

(

T

j)

-60 -20 20 60 100 ˚C 160

T

j

180

185

190

195

200

205

210

215

220

225

230

V

240

V

(BR)DSS

Published by

Infineon Technologies AG

81726 Munich, Germany

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conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

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including without limitation, warranties of non-infringement of intellectual property rights

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on the types in question, please contact the nearest Infineon Technologies Office.

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