BSR18A BSR18A C E SOT-23 B Mark: T92 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switching applications at collector currents of 10 A to 100 mA. Sourced from Process 66. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 40 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm. 1997 Fairchild Semiconductor Corporation Max Units *BSR18A 350 2.8 357 mW mW/C C/W 3 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS IC = 10 A, IB = 0 V(BR)CBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage V(BR)EBO Emitter-Base Breakdown Voltage ICBO Collector-Cutoff Current VCB = 30 V 50 nA IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 50 nA V(BR)CEO 40 V IC = 1.0 mA, IE = 0 40 V IE = 10 A, IC = 0 5.0 V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 60 80 100 60 30 0.65 300 0.25 0.4 0.85 0.95 V V V V SMALL SIGNAL CHARACTERISTICS fT Transition Frequency Ccb Collector-Base Capacitance IC = 10 mA, VCE = 20, f = 100 MHz VCB = 5.0 V, IE = 0, f = 100 kHz 250 MHz Ceb hie Emitter-Base Capacitance VEB = 0.5 V, IC = 0, f = 100 kHz Input Impedance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz hfe Small-Signal Current Gain VCE= 10 V,IC= 1.0 mA,f=1.0 kHz hoe Output Admittance VCE= 10 V,IC= 1.0 mA,f=1.0 kHz 3.0 60 S ns 4.5 pF 10 pF 2.0 12 k 100 400 SWITCHING CHARACTERISTICS td Delay Time IC = 10 mA, IB1 = 1.0 mA, 35 tr Rise Time VEB = 0.5 V 35 ns ts Storage Time IC = 10 mA, IBon = IBoff = 1.0 mA 275 ns tf Fall Time 75 ns *Pulse Test: Pulse Width 300 s, Duty Cycle 0.01% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. Spice Model PNP (Is=1.41f Xti=3 Eg=1.11 Vaf=18.7 Bf=180.7 Ne=1.5 Ise=0 Ikf=80m Xtb=1.5 Br=4.977 Nc=2 Isc=0 Ikr=0 Rc=2.5 Cjc=9.728p Mjc=.5776 Vjc=.75 Fc=.5 Cje=8.063p Mje=.3677 Vje=.75 Tr=33.42n Tf=179.3p Itf=.4 Vtf=4 Xtf=6 Rb=10) BSR18A PNP General Purpose Amplifier (continued) 250 V CE = 1 .0V 125 C 200 150 25 C 100 50 0.1 - 40 C 0.2 0.5 1 2 5 10 20 I C - COLLECTOR CURRE NT (mA) 50 100 Base-Emitter Saturation Voltage vs Collector Current = 10 1 - 40 C 0.8 25 C 125 C 0.6 0.4 0.2 0 1 10 100 I C - COLLECTOR CURRE NT (mA) 200 V CESAT - COLLECTOR EMITTER VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBE( ON)- BASE EMITTER ON VOLTAGE (V) V BESAT - BASE EM ITTE R VOLTAGE (V) h F E - TYPICAL PULSED CURRENT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.3 = 10 0.25 0.2 0.15 25 C 0.1 125C 0.05 0 - 40 C 1 0.8 - 40 C = 25V 3 125 C 0.4 V CE = 1V 0.2 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 25 10 C obo CAPACITANCE (pF) I CBO - COLLE CTOR CURRENT (nA) 25 C 0.6 Common-Base Open Circuit Input and Output Capacitance vs Reverse Bias Voltage 10 1 0.1 0.01 25 200 1 100 CB 10 100 I C - COLLECTOR CURRENT (mA) Base Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature V 50 75 100 TA - AMBIE NT TEMP ERATURE ( C) 125 BSR18A PNP General Purpose Amplifier 8 6 4 C ibo 2 0 0.1 1 REVERSE BIAS VOLTAGE (V) 10 (continued) Typical Characteristics (continued) Noise Figure vs Frequency Noise Figure vs Source Resistance 6 12 NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) V CE = 5.0V 5 4 3 I C = 100 A, R S = 200 2 I C = 1.0 mA, R S = 200 1 I C = 100 A, R S = 2.0 k 0 0.1 1 10 f - FREQUENCY (kHz) V CE = 5.0V f = 1.0 kHz 10 I C = 1.0 mA 8 6 4 I C = 100 A 2 0 0.1 100 Switching Times vs Collector Current 100 Turn On and Turn Off Times vs Collector Current 500 500 ts tf 10 I B1 = I B2 = tr Ic t off 100 TIME (nS) 100 t on I B1 = Ic 10 t on VBE(OFF) = 0.5V 10 Ic t off I = I = B1 B2 10 10 td 1 1 10 I C - COLLECTOR CURRENT (mA) 100 1 1 I 10 - COLLECTOR CURRENT (mA) Power Dissipation vs Ambient Temperature 350 P D - POWER DISSIPATION (mW) TIME (nS) 1 10 R S - SOURCE RESISTANCE ( k ) 300 250 SOT-23 200 150 100 50 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 100 BSR18A PNP General Purpose Amplifier (continued) Typical Characteristics Input Impedance Voltage Feedback Ratio ) 100 10 h ie - INPUT IMPEDANCE (k ) _ 4 h re - VOLTAGE FEEDBACK RATIO (x10 (continued) 10 1 0.1 1 I C - COLLECTOR CURRENT (mA) 0.1 0.1 10 1 I C - COLLECTOR CURRENT (mA) 10 Current Gain 1000 V CE = 10 V f = 1.0 kHz 500 h fe - CURRENT GAIN h oe - OUTPUT ADMITTANCE ( mhos) VCE = 10 V f = 1.0 kHz 1 Output Admittance 1000 100 V CE = 10 V f = 1.0 kHz 200 3 100 50 20 10 0.1 BSR18A PNP General Purpose Amplifier 1 I C - COLLECTOR CURRENT (mA) 10 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G