1
Subject to change without notice.
www.cree.com
FEATURES
Small Chip - 200 x 200 x 85 μm
Low Forward Voltage
3.1 V Typical at 20 mA - Blue & Trafc Green
3.2 V Typical at 20 mA Green
RT230™ LED Performance
2.0 mW min. Blue
1.5 mW min. Green
Single Wire Bond Structure
Class 2 ESD Rating
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APPLICATIONS
Mobile Phone Key Pads
Blue LEDs
White LEDs
Audio Product Display Lighting
Mobile Appliance Keypads
Automobile Dashboard Lighting
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RazerThin® LEDs
CxxxRT230-S0200
Cree’s RazerThin LEDs combine highly efcient InGaN materials with Cree’s proprietary G•SiC® substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s RT series chips are tested for conformity to optical and electrical specications
and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
CxxxRT230-S0200 Chip Diagram
Datasheet: CPR3CO, Rev. A
Top View Bottom View
G•SiC® LED Chip
200 x 200 μm
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Gold Bond Pad
105 μm Diameter
Side View
Cathode (-)
Anode (+)
Mesa (junction)
176 x 176 μm
InGaN
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
2CPR3CO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Maximum Ratings at TA = 25°C Notes 1&3 CxxxRT230-S0200
DC Forward Current 30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz) 100 mA
LED Junction Temperature 125°C
Reverse Voltage 5 V
Operating Temperature Range -40°C to +100°C
Storage Temperature Range -40°C to +100°C
Electrostatic Discharge Threshold (HBM) Note 2 1000 V
Electrostatic Discharge Classication (MIL-STD-883E) Note 2 Class 2
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA Note 3
Part Number Forward Voltage (Vf, V) Reverse Current
[I(Vr=5V), μA]
Full Width Half Max
(λD, nm)
Min. Typ. Max. Max. Typ.
C460RT230-S0200 2.7 3.1 3.7 2 21
C470RT230-S0200 2.7 3.1 3.7 2 22
C505RT230-S0200 2.7 3.1 3.7 2 30
C527RT230-S0200 2.7 3.2 3.7 2 35
Mechanical Specications CxxxRT230-S0200
Description Dimension Tolerance
P-N Junction Area (μm) 176 x 176 ± 25
Top Area (μm) 200 x 200 ± 25
Bottom Area (μm) 200 x 200 ± 25
Chip Thickness (μm) 85 ± 10
Au Bond Pad Diameter (μm) 105 -5, +15
Au Bond Pad Thickness (μm) 1.2 ± 0.5
Back Contact Metal Area (μm) 80 x 80 ± 25
Notes:
Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specic package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classication of Class 2 is based on sample testing according to MIL-STD-883E.
All products conform to the listed minimum and maximum specications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efciency decreases at higher currents. Typical values given
are within the range of average values expected by manufacturer in large quantities and are provided for information only. All
measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Optical characteristics measured in an
integrating sphere using Illuminance E.
Caution: To obtain optimum output efciency, the amount of epoxy used should be characterized based upon the specic
application.
Specications are subject to change without notice.
1.
2.
3.
4.
5.
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
3CPR3CO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Standard Bins for CxxxRT230-S0200
LED chips are sorted to the radiant ux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxRT230-S0200) orders may be lled with any or all bins (CxxxRT230-0xxx) contained
in the kit. All radiant ux values are measured at If = 20 mA and all dominant wavelength values are measured at If =
20 mA.
C460RT230-S0200
C460RT230-0203 C460RT230-0204
C460RT230-0201 C460RT230-0202
455 nm 460 nm 465 nm
6.0 mW
4.0 mW
2.0 mW
Dominant Wavelength
Radiant Flux
C470RT230-S0200
C470RT230-0203 C470RT230-0204
C470RT230-0201 C470RT230-0202
465 nm 470 nm 475 nm
6.0 mW
4.0 mW
2.0 mW
Dominant Wavelength
Radiant Flux
C527RT230-S0200
C527RT230-0204 C527RT230-0205 C527RT230-0206
C527RT230-0201 C527RT230-0202 C527RT230-0203
520 nm 525 nm 530 nm 535 nm
4.0 mW
2.5 mW
1.5 mW
Dominant Wavelength
Radiant Flux
C505RT230-S0200
C505RT230-0205 C505RT230-0206
C505RT230-0203 C505RT230-0204
C505RT230-0201 C505RT230-0202
500 nm 505 nm 510 nm
6.0 mW
4.0 mW
2.5 mW
1.5 mW
Dominant Wavelength
Radiant Flux
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and RazerThin are registered trademarks, and RT230 is a trademark of Cree, Inc.
4CPR3CO Rev. A
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Characteristic Curves
These are representative measurements for the RT230 product. Actual curves will vary slightly for the various radiant
ux and dominant wavelength bins.
Forward Current vs Forward Voltage
0
5
10
15
20
25
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Vf (V)
If (mA)
Wavelength Shift vs Forward Current
-4.0
0.0
4.0
8.0
12.0
16.0
20.0
0 5 10 15 20 25 30
If (mA)
527nm
505nm
470nm
Relative Intensity vs. Peak Wavelength
0
20
40
60
80
100
350 400 450 500 550 600 650
Wavelength (nm)
Relative Intensity (%)
460 nm
505 nm
527 nm
Relative Intensity vs Forward Voltage
0
20
40
60
80
100
120
140
0 5 10 15 20 25 30
If (mA)
% Relative Intensity