Symbol
VDS
VGS
IDM
IAR
EAR
TJ, TSTG
Symbol Typ Ma
x
55 62.5
90 110
RθJL 40 48
Maximum Junction-to-Lead
CSteady-State °C/W
Parameter Units
Maximum Junction-to-Ambient
A
Ft ≤ 10s RθJA
°C/W
Maximum Junction-to-Ambient
A
Steady-State °C/W
Junction and Storage Temperature Range -55 to 150 °C
Thermal Characteristics
TA=70°C 1.2 W
Power Dissipation
TA=25°C PD
1.9
A
TA=70°C 5.8
Pulsed Drain Current
B40
Continuous Drain
Current AF
TA=25°C
ID
6.9
Drain-Source Voltage 30 V
Gate-Source Voltage ±12 V
Absolute Maximum Ratings T
A=25°C unless otherwise noted
Parameter Maximum Units
Avalanche Current
B12 A
Repetitive avalanche energy 0.3mH
B22 mJ
AO4800B, AO4800BL
Dual N-Channel Enhancement Mode Field Effect Transistor
Features
VDS (V) = 30V
ID = 6.9A (VGS = 10V)
RDS(ON) < 27mΩ (VGS = 10V)
RDS(ON) < 32mΩ (VGS = 4.5V)
RDS(ON) < 50mΩ (VGS = 2.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested!
General Description
The AO4800B/L uses advanced trench technology to
provide excellent R
DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in buck
converters. Standard Product AO4800B/L is Pb-free
(meets ROHS & Sony 259 specifications).
G1
S1
G2
S2
D1
D1
D2
D2
1
2
3
4
8
7
6
5
G1
D1
S1 G2
D2
S2
SOIC-8
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4800B/L
Symbol Min Typ Max Units
BVDSS 30 V
0.002 1
TJ=55°C 5
IGSS 100 nA
VGS(th) 0.7 1 1.5 V
ID(ON) 40 A
20 27
TJ=125°C 25 40
23 32 m
Ω
34 50 m
Ω
gFS 10 26 S
VSD 0.71 1 V
IS4.5 A
Ciss 900 1100 pF
Coss 88 pF
Crss 65 pF
Rg0.95 1.5 Ω
Qg10 12 nC
Qgs 1.8 nC
Qgd 3.75 nC
tD(on) 3.2 ns
tr3.5 ns
tD(off) 21.5 ns
tf2.7 ns
trr 16.8 20 ns
Qrr 812nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
ID=250µA, VGS=0V
VGS=2.5V, ID=5A
VGS=4.5V, VDS=5V
VGS=10V, ID=6.9A
Reverse Transfer Capacitance
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
IDSS µA
Gate Threshold Voltage VDS=VGS ID=250µA
VDS=24V, VGS=0V
VDS=0V, VGS= ±12V
Zero Gate Voltage Drain Current
Gate-Body leakage current
RDS(ON) Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
IF=5A, dI/dt=100A/µs
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=4.5V, VDS=15V, ID=8.5A
Gate Source Charge
Gate Drain Charge
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=15V, RL=1.8Ω,
RGEN=6Ω
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Gate resistance VGS=0V, VDS=0V, f=1MHz
mΩ
VGS=4.5V, ID=6A
IS=1A,VGS=0V
VDS=5V, ID=5A
A: The value of R
θJA is measured with the device mounted on 1in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The value in
any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R
θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C. The SOA curve
provides a single pulse rating.
Rev 1 : Dec 2007
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
G
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
10
20
30
40
50
60
012345
VDS (Volts)
Fig 1: On-Region Characteristics
ID (A)
VGS=2V
2.5V
3V
4.5V
10V
0
4
8
12
16
20
0 0.5 1 1.5 2 2.5 3
VGS(Volts)
Figure 2: Transfer Characteristics
ID(A)
10
20
30
40
50
60
0 5 10 15 20
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
RDS(ON) (mΩ)
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
IS (A)
25°C
125°C
0.5
0.7
0.9
1.1
1.3
1.5
1.7
-50 -25 0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
VGS=2.5V
VGS=10V
VGS=4.5V
VGS=4.5 VGS=10V
VGS=2.5V
10
20
30
40
50
60
70
80
90
100
0246810
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
RDS(ON) (mΩ)
25°C
125°C
VDS=5V
VGS=2.5V
V
GS
=4.5V
V
GS
=10V
ID=6.9A
25°C
125°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO4800B/L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISIN
G
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
1
2
3
4
5
024681012
Qg (nC)
Figure 7: Gate-Charge Characteristics
VGS (Volts)
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30
VDS (Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
Ciss
0
10
20
30
40
50
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
ZθJA Normalized Transient
Thermal Resistance
Coss
Cr
ss
0.1
1.0
10.0
100.0
0.1 1 10 100
VDS (Volts)
ID (Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
1
m
1ms
1
s
10s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
VDS=15V
ID=6.9A
Single Pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=62.5°C/W
T
on
T
PD
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TJ(Max)=150°C
TA=25°C
Alpha & Omega Semiconductor, Ltd. www.aosmd.com