M38510/10108 - Department of Defense

INCH-POUND

MIL-M-38510/101J

07 February 2003

SUPERSEDING

MIL-M-38510/101H

30 October 2001

MILITARY SPECIFICATION

MICROCIRCUITS, LINEAR, OPERATIONAL AMPLIFIER, MONOLITHIC SILICON

This specification is approved for use by all Departments and Agencies of the Department of Defense.

Inactive for new design after 13 July 1995.

1. SCOPE

1.1 Scope. This specification covers the detail requirements for monolithic silicon, operational amplifiers. Two product

assurance classes and a choice of case outlines and lead finish are provided for each type and are reflected in the complete

part number. For this product, the requirements of MIL-M-38510 have been superseded by MIL-PRF-38535, (see 6.3).

1.2 Part number. The complete part number shall be in accordance with MIL-PRF-38535, and as specified herein..

1.2.1 Device types. The device types shall be as shown in the following:

Device type Circuit

01 Single operational amplifier - internally compensated

02 Dual operational amplifier - internally compensated

03 Single operational amplifier - externally compensated

04 Single operational amplifier - externally compensated

05 Dual operational amplifier - externally compensated 1/

06 Dual operational amplifier - externally compensated 1/

07 Single operational amplifier, high speed

08 Dual operational amplifier - internally compensated

1.2.2 Device class. The device class shall be the product assurance level as defined in MIL-PRF-38535.

______

1

/ Device types 05 and 06 may be monolithic, or they may consist of two separate, independent die.

Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be use

in improving this document should be addressed to: Commander, Defense Supply Center Columbus,

ATTN: DSCC-VAS, 3990 East Broad St., Columbus, OH 43216-5000, by using the Standardization

Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

AMSC N/A FSC 5962

DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.

MIL-M-38510/101J

1.2.3 Case outlines. The case outlines shall be designated in MIL-STD-1835 and as follows:

Outline letter Descriptive designator Terminals Package style

A 2/ GDFP5-F14 or CDFP6-F14 14 Flat pack

B 2/ GDFP4-14 14 Flat pack

C GDIP1-T14 or CDIP2-T14 14 Dual-in-line

D GDFP1-F14 or CDFP2-F14 14 Flat pack

E GDIP1-T16 or CDIP2-T16 16 Dual-in-line

F GDFP2-F16 or CDFP3-F16 16 Flat pack

G MACY1-X8 8 Can

H GDFP1-F10 or CDFP2-F10 10 Flat pack

I MACY1-X10 10 Can

P GDIP1-T8 or CDIP2-T8 8 Dual-in-line

Z GDFP1-G10 10 Flat pack with gullwing leads

2 CQCC1-N 20 20 Square leadless chip carrier

1.3 Absolute maximum ratings.

Supply voltage range (VCC).............................................................................±22 V dc 3/

Input voltage range .........................................................................................±20 V dc 4/

Differential input voltage range .......................................................................±30 V dc 5/

Input current range .........................................................................................-0.1 mA to +10 mA

Storage temperature range .............................................................................-65 °C to +150°C

Output short-circuit duration ............................................................................Unlim ited 6/

Lead temperature (soldering, 60 seco nds) .....................................................+300°C

Junction temperature (TJ) ............................................................................... +175°C 7/

1.4 Recommended operating conditions.

Supply voltage (VCC) ...................................................................................... ±5 V dc to ±20 V dc

Ambient temperature range (TA) ....................................................................-55°C to +125°C

______

2/ Inactive package case outline.

3

/ Voltages in excess of these may be applied for short-term tests if voltage difference does not exceed 44 volts.

4

/ For supply voltages less than ±20 V dc, the absolute maximum input voltage is equal to the supply voltage.

5

/ For device types 04, 06, and 07 only, this rating is ±1.0 V unless resistances of 2 kΩ or greater are inserted in

series with the inputs to limit current in the input shunt diodes to the maximum allowable value.

6

/ Short circuit may be to ground or either supply. Rating applies to +125°C case temperature or +75°C

ambient temperature.

7

/ For short term test (in the specific burn-in and life test configuration when required and up to 168 hours

maximum) TJ = +275°C.

2

MIL-M-38510/101J

1.5 Power and thermal characteristics.

Case outlines Maximum allowable power

dissipation Maximum

θJC Maximum

θJA

A,B,D 350 mW at TA = +125°C 60°C/W 140°C/W

C,E,P 400 mW at TA = +125°C 35°C/W 120°C/W

G 330 mW at TA = +125°C 40°C/W 150°C/W

I 350 mW at TA = +125°C 40°C/W 140°C/W

H 330 mW at TA = +125°C 60°C/W 150°C/W

F 400 mW at TA = +125°C 35°C/W 120°C/W

Z 330 mW at TA = +125°C 21°C/W 225°C/W still air

142°C/ W 500 LFPM

2 8/ at TA = +125°C 60°C/W 120°C/W

2. APPLICABLE DOCUMENTS

2.1 Government documents.

2.1.1 Specifications, standards, and handbooks. The following specifications and standards form a part of this

specification to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the

solicitation or contract.

DEPARTMENT OF DEFENSE SPECIFICATIONS

MIL-PRF-38535 - Integrated Circuits (Microcircuits) Manufacturing, General Specification for.

DEPARTMENT OF DEFENSE STANDARDS

MIL-STD-883 - Test Method Standard for Microelectronics.

MIL-STD-1835 - Interface Standard Electronic Component Outlines.

(Copies of these documents are available from the Standardization Document Order Desk, 700 Robbins Avenue, Building

4D, Philadelphia, PA 19111-5094 or http://astimage.daps.dla.mil/quicksearch/ or www.dodssp.daps.mil.)

2.2 Order of precedence. In the event of a conflict between the text of this specification and the references cited herein

the text of this document shall takes precedence. Nothing in this document, however, supersedes applicable laws and

regulations unless a specific exemption has been obtained.

______

8

/ PD = 102 mW for device type 01. PD = 75 mW for device type 03. PD = 149 mW for device type 04.

3

MIL-M-38510/101J

3. REQUIREMENTS

3.1 Qualification. Microcircuits furnished under this specification shall be products that are manufactured by a

manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturers list before contract

award (see 4.3 and 6.4).

3.2 Item requirements. The individual item requirements shall be in accordance with MIL-PRF-38535 and as specified

herein or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan shall

not affect the form, fit, or function as described herein.

3.3 Design, construction, and physical dimensions. The design, construction, and physical dimensions shall be as

specified in MIL-PRF-38535 and herein.

3.3.1 Terminal connections. The terminal connections shall be as specified on figure 1.

3.3.2 Schematic circuits. The schematic circu its sh all be ma intai ned by the manufa cturer and made available to the

qualifying activity and the preparing activity (DSCC-VAS) upon request.

3.3.3 Case outlines. The case outlines shall be as specified in 1.2.3.

3.4 Lead material and finish. Lead material and finish shall be in accordance with MIL-PRF-38535 (see 6.6).

3.5 Electrical performance characteristics. The following electrical performance characteristics apply over the full

operating ambient temperature range of -55°C to +125°C and for supply voltages ±5 V dc to ±20 V dc, unless otherwise

specified (see table I).

3.5.1 Offset null circuits. Each amplifier having nulling inputs (device types 01, 02, 03, 05, and 07) shall be capable of

being nulled 1 mV beyond the specified offset voltage limits for -55°C ≤ TA ≤ +125°C using the circuits of figure 2.

3.5.2 Frequency compensation. Device types 01, 02, 07, and 08 shall be free of oscillation when operated in a unity gain

non-inverting mode with no external compensation and a source resistance of ≤ 10 kΩ, and when operated in any test

condition specified herein. Device types 03, 04, 05, and 06 shall be free from oscillation when compensated with a 30 pF

capacitor for all gain configurations or a 3 pF capacitor when used with a gain of 10.

3.6 Rebonding. Rebonding shall be in accordance with MIL-PRF-38535.

3.7 Electrical test requirements. Electrical test requirements for each device class shall be the subgroups specified in

table II. The electrical tests for each subgroup are described in table III.

3.8 Marking. Marking shall be in accordance with MIL-PRF-38535.

3.9 Microcircuit group assignment. The devices covered by this specification shall be in microcircuit group number 49

(see MIL-PRF-38535, appendix A).

4

MIL-M-38510/101J

TABLE I. Electrical performance characteristics. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Input offset voltage

VIO R

S = 50 Ω 2/ 1 01,02,

08 -3 +3 mV

03,05 -2 +2

04,06 -0.5 +0.5

07 -4 +4

2,3 01,02,

08 -4 +4

03,05 -3 +3

04,06 -1 +1

07 -6 +6

Input offset voltage

temperature sensitivity ∆VIO /

∆T

2 01,02,

08 -15 +15

µV/°C

03,05 -18 +18

04,06 -5 +5

07 -50 +50

3 01,02,

03,05 -15 +15

04,06 -5 +5

07 -50 +50

08 -20 20

See footnotes at end of table.

5

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Input offset current

IIO 2/ 1 01,02,

08 -30 +30 nA

03,05 -10 +10

04,06 -0.2 +0.2

07 -40 +40

2,3 01,02,

08 -70 +70

03,05 -20 +20

04,06 -0.4 +0.4

07 -80 +80

Input offset current

temperature sensitivity ∆IIO /

∆T

2 01,02,

08 -500 +500

pA/°C

03,05 -200 +200

04,06 -2.5 +2.5

07 -1000 +1000

3 01,02,

08 -200 +200

03,05 -100 +100

04,06 -2.5 +2.5

07 -1000 +1000

See footnotes at end of table.

6

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Input bias current

+IIB 2/ 1,2 01,02,

08 -0.1 +110 nA

03,05 -0.1 +75

07 -0.1 +250

1 04,06 -0.1 +2.0

2 -1.0 +2.0

3 01,02,

08 -0.1 +265

03,05 -0.1 +100

04,06 -0.1 +3.0

07 -0.1 +400

-IIB 1,2 01,02,

08 -0.1 +110

03,05 -0.1 +75

07 -0.1 +250

1 04,06 -0.1 +2.0

2 -1.0 +2.0

3 01,02,

08 -0.1 +265

03,05 -0.1 +100

04,06 -0.1 +3.0

07 -0.1 +400

See footnotes at end of table. 7

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Power supply rejection

ratio +PSRR +VCC = 10 V, RS = 50 Ω, 1 01,02,

03,05,

08

-50 +50

µV/V

-VCC = -20 V 04,06 -16 +16

07 -100 +100

2,3 01,02,

03,05,

08

-100 +100

04,06 -16 +16

07 -150 +150

-PSRR +VCC = 20 V, RS = 50 Ω, 1 01,02,

03,05,

08

-50 +50

-VCC = -10 V 04,06 -16 +16

07 -100 +100

2,3 01,02,

03,05,

08

-100 +100

04,06 -16 +16

07 -150 +150

Input voltage common

mode rejection CMR ±VCC = 20 V, VIN = ±15 V,

RS = 50 Ω

1,2,3 01,02,

03,05,

07,08

80 dB

04,06 96

See footnotes at end of table.

8

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherwise sp eci fied Min Max

Adjustment for input 3/

offset voltage VIO

ADJ(+) ±VCC = 20 V 1,2,3 01,02,

08 +5 mV

03,05 +4

04,06 No

external

ADJ

07 +7

Adjustment for input 3/

offset voltage VIO

ADJ(-) ±VCC = 20 V 1,2,3 01,02,

08 -5 mV

03,05 -4

04,06 No

extern

al ADJ

07 -7

Output short-circuit

current (for positive IOS(+) ±VCC = 15 V, t ≤ 25 ms 4/ 1,2,3 01,02,

03,05,

08

-60 mA

output)

04,06 -15

07 -65

Output short-circuit

current (for negative IOS(-) ±VCC = 15 V, t ≤ 25 ms 4/ 1,2,3 01,02,

03,05,

08

+60 mA

output)

04,06 +15

1,2 07 +65

3 +80

See footnotes at end of table.

9

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Supply current

ICC ±VCC = ±15 V 5/ 1 01,02,

08 +3.8 mA

03,05 +3

04,06 +0.6

07 +8

2 01,02,

08 +3.4

03,05 +2.5

04,06 +0.6

07 +7

3 01,02,

08 +4.2

03,05 +3.5

04,06 +0.8

07 +9

Output voltage swing

(maximum) VOP ±VCC = 20 V, RL = 10 kΩ 4,5,6 01-06,

08 ±16 V

07

±17

±VCC = 20 V, RL = 2 kΩ 01,02,

03,05,

08

±15

04,06 Not

speci-

fied

07

±16

See footnotes at end of table.

10

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Open loop voltage gain 6/

(single ended) AVS(±) ±VCC = 20 V, 7/

RL = 2 kΩ, 10 kΩ

4 01,02,

03,05,

07,08

50 V/mV

VOUT = ±15 V 04,06 80

5,6 01,02,

03,05,

08

25

04,06 40

07 32

Open loop voltage gain 6/

(single ended) AVS ±VCC = 5 V, 7/

RL = 2 kΩ, 10 kΩ

4,5,6 01,02,

03,05,

07,08

10 V/mV

VOUT = ±2 V 04,06 20

Transient response rise

time TR(tr) See figure 4 8/ 7,8A,8B 01,02,

03,05,

08

+800 ns

04,06 +1000

07 +40

Transient response

overshoot TR(OS) See figure 4 8/ 7,8A,8B 01,02,

03,05,

08

+25 %

04,06,

07 +50

Slew rate 9/

SR(+) VIN = ±5 V, AV = 1, 7,8B 01,02,

08 +0.3

V/µs

see figure 4 03,05 10/

04,06 +0.05

07 +40

See footnotes at end of table.

11

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Slew rate 9/

SR(+) VIN = ±5 V, AV = 1, 8A 01,02,

03,05,

08

+0.3

V/µs

see figure 4 04,06 +0.05

07 +30

Slew rate 9/

SR(-) VIN = ±5 V, AV = 1, 7,8B 01,02,

08 +0.3

V/µs

see figure 4 03,05 10/

04,06 +0.05

07 +40

8A 01,02,

03,05,

08

+0.3

04,06 +0.05

07 +30

Settling time 11/

tS(+) See figure 4 12 07 800 ns

13A,13B 1200

tS(-) 12 800

13A,13B 1200

Channel separation

CS ±VCC = ±20 V,

see figure 5,

TA = +25°C

7 02,05,

06,08 80 dB

See footnotes at end of table.

12

MIL-M-38510/101J

TABLE I. Electrical performance characteristics – Continued. 1/

Test

Symbol

Conditions

-55°C ≤ TA ≤ +125°C

see figure 3

Group A

subgroups

Device

type

Limits Unit

unless otherw ise sp eci f ied Min Max

Noise (referred to input)

broadband NI(BB) ±VCC = 20 V, TA = +25°C,

bandwidth = 5 kHz

7 01-06,

08 15

µVrms

07 25

Noise (referred to input)

popcorn NI(PC) ±VCC = 20 V, TA = +25°C,

bandwidth = 5 kHz

7 01,02,

04,06,

08

40

µVpk

03,05,

07 80

1/ For devices marked with the “Q” certification mark, the parameters listed herein maybe guaranteed if not tested

to the limits specified herein in accordance with the manufacturer’s QM plan.

2/ Tests at common mode VCM = 0 V, VCM = -15 V, and VCM = +15 V.

3/ VIO(ADJ) is not performed on device type 02, case I only, or on device type 08 for either case G or P.

4/ Continuous short circuit limits will be considerably less than the indicated test limits. Continuous IOS at TA ≤ +75°C

will cause TJ to exceed the maximum of +175°C. For dual devices, IOS is measured one ch annel at a time.

5/ Value shown is for single devices (01, 03, 04) only. For dual devices (02, 05, 06, and 08) this limit is for single

devices.

6/ Note that gain is not specified at VIO(ADJ) extremes. Some gain reduction is usually seen at VIO(ADJ) extremes.

For closed loop applications (closed loop gain less than 1,000), the open loop tests (AVS) prescribed herein should

guarantee a positive, reasonably linear, transfer characteristic. They do not, however, guarantee that the open

loop gain is linear, or even positive, over the operating range. If either of these requirements exist (positive open

loop gain or open loop gain linearity), they should be specified in the individual procurement document as

additional requirements.

7/ RL = 10 kΩ only for device types 04 and 06.

8/ For transient response tests, CF = 10 pF for device types 01, 02, 03, 04, 05, 06, and 08. Device type 07,

C

F = 47 pF. CF includes the effects of stray capacitance.

9/ Minimum limit for device 08 is 0.4 V/µs at all temperatures.

10/ Minimum limits for device types 03 and 05 are 0.2 V/µs at -55°C and 0.3 V/µs at both +25°C and +125°C.

11/ Settling time is waived for method 5004, MIL-STD-883 except for device type 07.

13

MIL-M-38510/101J

TABLE II. Electrical test requirements.

MIL-PRF-38535

test requirements Subgroups (see table III)

Class S

devices Class B

devices

Interim electrical parameters

1 1

Final electrical test parameters 1/

1,2,3,4 1,2,3,4

Group A test requirements

1,2,3,4,5,6,

7,8A,8B,12,

13A,13B

1,2,3,4,5,6,7

Group C end point electrical

parameters

1,2,3, and

table IV delta

limits

1 and table IV

delta limits

Additional electrical subgroups

For group C periodic inspections Not applicable 8A,8B,12,

13A,13B

Group D end point electrical

parameters 1,2,3 1

1

/ PDA applies to subgroup 1.

4. VERIFICATION.

4.1 Sampling and inspection. Sampling and inspection procedures shall be in accordance with MIL-PRF-38535 or as

modified in the device manufacturer’s Quality Management (QM) plan. The modification in the QM plan shall not affect the

form, fit, or function as function as described herein.

4.2 Screening. Screening shall be in accordance with MIL-PRF-38535, and shall be conducted on all devices prior to

qualification and quality conformance inspection. The following additional criteria shall apply:

a. The burn-in test duration, test condition, and test temperature, or approved alternatives shall be as specified in the

device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained

under document control by the device manufacturer's Technology Review Board (TRB) in accordance with

MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit

shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent

specified in test method 1015 of MIL-STD-883.

b. Interim and final electrical test parameters shall be as specified in table II, except interim electrical parameters test

prior to burn-in is optional at the discretion of the manufacturer.

c. Additional screening for space level product shall be as specified in MIL-PRF-38535.

14

MIL-M-38510/101J

Device type

01

Case ou tlines

A,B,C,D G and P H 2

Terminal

number Terminal sy mbo l

1

NC OFFSET NULL NC NC

2

NC -INPUT OFFSET NULL OFFSET

NULL (-)

3

OFFSET NULL +INPUT -INPUT NC

4

-INPUT -VCC +INPUT NC

5

+INPUT OFFSET NULL -VCC -INPUT

6

-VCC OUTPUT OFFSET NULL NC

7

NC +VCC OUTPUT +INPUT

8

NC NC

+VCC NC

9

OFFSET NULL --- NC NC

10

OUTPUT --- NC -VCC

11

+VCC --- --- NC

12

NC --- --- OFFSET

NULL (+)

13

NC --- --- NC

14

NC --- --- NC

15

--- --- --- OUTPUT

16

--- --- --- NC

17

--- --- ---

+VCC

18

--- --- --- NC

19

--- --- --- NC

20

--- --- --- NC

NC = No connection

FIGURE 1. Terminal connections.

15

MIL-M-38510/101J

Device type

02 03

Case ou tlines

A,B,C,D I C G and P H

Terminal

number Terminal sy mbo l

1

-INPUT A OUTPUT A NC OFFSET NULL /

COMP NC

2

+INPUT A +VCC (A)

SEE NOTE 2 NC -INPUT OFFSET NULL /

COMP

3

OFFSET NULL A -INPUT A OFFSET NULL /

COMP +INPUT -INPUT

4

-VCC +INPUT A -INPUT -VCC +INPUT

5

OFFSET NULL B -VCC +INPUT OFFSET NULL -VCC

6

+INPUT B +INPUT B -VCC OUTPUT OFFSET NULL

7

-INPUT B -INPUT B NC +VCC OUTPUT

8

OFFSET NULL B +VCC (B)

SEE NOTE 2 NC COMP

+VCC

9

+VCC (B)

SEE NOTE 2 OUTPUT B OFFSET NULL --- COMP

10

OUTPUT B NC OUTPUT --- NC

11

NC ---

+VCC --- ---

12

OUTPUT A --- COMP --- ---

13

+VCC (A)

SEE NOTE 2 --- NC --- ---

14

OFFSET NULL A --- NC --- ---

15

--- --- --- --- ---

16

--- --- --- --- ---

17

--- --- --- --- ---

18

--- --- --- --- ---

19

--- --- --- --- ---

20

--- --- --- --- ---

NC = No connection

FIGURE 1. Terminal connections – Continue d.

16

MIL-M-38510/101J

Device type

03 04

Case ou tlines

2 C G and P H 2

Terminal

number Terminal sy mbo l

1

NC NC INPUT COMP NC NC

2

OFFSET

NULL (-) INPUT COMP -INPUT GUARD INPUT COMP

3

NC GUARD +INPUT -INPUT NC

4

NC -INPUT

-VCC +INPUT NC

5

-INPUT +INPUT NC GUARD -INPUT

6

NC GUARD OUTPUT

-VCC NC

7

+INPUT -VCC +VCC OUTPUT +INPUT

8

NC NC OUTPUT

COMP +VCC NC

9

NC NC --- OUTPUT

COMP NC

10

-VCC OUTPUT --- INPUT COMP

-VCC

11

NC +VCC --- --- NC

12

OFFSET

NULL (+) OUTPUT

COMP --- --- NC

13

NC NC --- --- NC

14

NC NC --- --- NC

15

OUTPUT --- --- --- OUTPUT

16

NC --- --- --- NC

17

+VCC --- --- ---

+VCC

18

NC --- --- --- NC

19

NC --- --- --- NC

20

FREQ COMP --- --- --- OUTPUT

COMP

NC = No connection

FIGURE 1. Terminal connections – Continue d.

17

MIL-M-38510/101J

Device type

05 06 07

Case ou tlines

E and F E and F C G and P

Terminal

number Terminal sy mbo l

1

+VCC (A)

SEE NOTE 5 +VCC (A)

SEE NOTE 5 NC COMP A /

OFFSET

NULL

2

COMP A OUTPUT

COMP A NC -INPUT

3

OFFSET NULL /

COMP INPUT

COMP A CO MP A /

OFFSET NULL +INPUT

4

-INPUT A -INPUT A -INPUT -VCC

5

+INPUT A +INPUT A +INPUT COMP B /

OFFSET

NULL

6

-VCC -VCC -VCC OUTPUT

7

OFFSET

NULL B NC NC

+VCC

8

OUTPUT B OUTPUT B NC COMP C

9

+VCC (B)

SEE NOTE 5 +VCC (B)

SEE NOTE 5 COMP B /

OFFSET NULL ---

10

COMP B OUTP UT

COMP B OUTPUT ---

11

OFFSET NULL /

COMP B INPUT

COMP B +VCC ---

12

-INPUT B -INPUT B COMP C ---

13

+INPUT B +INPUT B NC ---

14

OFFSET

NULL A NC NC ---

15

NC NC --- ---

16

OUTPUT A OUTPUT A --- ---

NC = No connection

FIGURE 1. Terminal connections – Continue d.

18

MIL-M-38510/101J

Device types

07 08

Case ou tlines

H G and P

Terminal

number Terminal symbol

1

NC OUTPUT A

2

COMP A /

OFFSET NULL -INPUT A

3

-INPUT +INPUT A

4

+INPUT -VCC

5

-VCC +INPUT B

6

COMP B /

OFFSET NULL -INPUT B

7

OUTPUT OUTPUT B

8

+VCC +VCC

9

COMP C ---

10

NC ---

NC = No connection

NOTES:

1. -VCC shall be connected to case of metal packages.

2. For device type 02 only, +VCC (A) and +VCC (B) shall be internally connected.

3. +Input is non-inverting input.

4. -Input is inverting input.

5. For device types 05 and 06 only, +VCC (A) and +VCC (B) shall not be internally connected.

(External connection to the same supply voltage recommended).

FIGURE 1. Terminal connections – Continue d.

19

MIL-M-38510/101J

FIGURE 2. Offset null circuits.

20

MIL-M-38510/101J

Device type 07

FIGURE 2. Offset null circuits - Continued.

21

MIL-M-38510/101J

FIGURE 3. Test circuit for static and dynamic tests.

22

MIL-M-38510/101J

Units

mV

nA

µV/V

dB

mV

Measured parameter 20/

Equation

VIO = E1, E2, E3, E4

IIO = ((E1 - E5) X 106) / RS, ((E2 - E6) X 106) / RS, 13/

((E3 - E7) X 106) / RS, ((E4 - E8) X 106) / RS

+IIB = ((E1 - E9) X 106) / RS, ((E2 – E10) X 106) / RS, 13/

((E3 - E11) X 106) / RS, ((E4 - E12) X 106) / RS

-IIB = ((E13 - E1) X 106) / RS, ((E14 - E2) X 106) / RS, 13/

((E15 - E31) X 106) / RS, ((E16 - E4) X 106) / RS

+PSRR = (E3 - E18) X 102

-PSRR = (E3 - E19) X 102

CMR = 20 LOG |(30 X 103) / (E1 - E2)|

VIO ADJ (+) = (E3 - E20)

VIO ADJ (-) = (E3 - E21)

VIO ADJ (+) = (E3 - E22)

VIO ADJ (-) = (E3 - E23)

VIO ADJ (+) = (E3 - E34)

VIO ADJ (-) = (E3 - E35)

Units

V

Measure

Value

E1

E2

E3

E4

E5

E6

E7

E8

E9

E10

E11

E12

E13

E14

E15

E16

E18 1/

E19 1/

E1 1/

E2 1/

E20

E21

E22

E23

E34

E35

S6

1

S5

1

S4

1

2

3

4

5

6

7

S3

1

2

1

2

1

S2

1

2

1

Switch position

S1

1

V

-15

15

0

-15

15

0

-15

15

0

-15

15

0

5

-5

-15

+15

0

-VCC

-5

-35

-20

-

5

-5

-35

-20

-5

-35

-20

-5

-35

-20

-5

-20

-10

-5

-35

-20

Apply (in volts)

+VCC

35

5

20

5

35

5

20

5

35

5

20

5

35

5

20

5

10

20

35

5

20

Parameter

VIO

IIO

+IIB

-IIB

+PSRR

-PSRR

CMR

VIO 7/

ADJ(+)

VIO 7/

ADJ(-)

VIO 6/

ADJ(+)

VIO 6/

ADJ(-)

VIO 15/

ADJ(+)

VIO 15/

ADJ(-)

FIGURE 3. Test circuit for static and dynamic tests- Continued.

23

MIL-M-38510/101J

Units

mA

V

V/mV

Measured parameter 20/

Equation

+IOS -= IOS1

-IOS = IOS2

ICC = ICC

+VOP = (E0)1

-VOP = (E0)2

+VOP = (E0)3

-VOP = (E0)4

+AVS = 15 / (E3 - E24)

-AVS = 15 / (E25 - E3)

AVS = 4 / (E27 - E26)

+AVS = 15 / (E3 - E30)

-AVS = 15 / (E31 - E3)

AVS = 4 / (E33 - E32)

CMR = 20 log |(30 x 103) / (E28 - E29)|

Units

mA

V

Measure

Value

IOS1

IOS2

ICC

(E0)1

(E0)2

(E0)3

(E0)4

E24

E25

E26

E27

E30

E31

E32

E33

E28 1/

E29 1/

S6

2

1

S5

1

2

3

2

1

S4

1

S3

1

S2

1

Switch position

S1

1

2

V

-15

+15

0

-20

+20

-20

+20

-15

+15

-2

+2

-15

+15

-2

+2

+15

-15

-VCC

-15

-20

-5

-20

-5

-20

Apply (in volts)

+VCC

15

20

5

20

5

20

Parameter

+IOS

(output)

-IOS

(output)

ICC

+VOP

RL = 10 kΩ

-VOP

RL = 10 kΩ

+VOP

RL = 2 kΩ

-VOP

RL = 2 kΩ

+AVS 16/

RL = 2 kΩ

-AVS 16/

RL = 2 kΩ

AVS 16/

RL = 2 kΩ

+AVS 16/

RL = 10 kΩ

-AVS 16/

RL = 10 kΩ

AVS 16/

RL = 10 kΩ

CMR 3/

FIGURE 3. Test circuit for static and dynamic tests- Continued.

24

MIL-M-38510/101J

NOTES:

1/ These voltages in mV shall be measured to four place accuracy to provide required resolution in PSRR and CMR.

2/ Precautions shall be taken to prevent damage to the device under test during insertion into socket and change

of switch positions (example, disable voltage supplies, current limit ±VCC, etc.).

3/ If this alternate CMR test is used, these resistors shall be of .01 percent tolerances matched to .001 percent.

4/ Device types 02, 05, and 06 only, test both halves for all tests. The idle half of the dual amplifiers shall be

maintained in this configuration where V1 is midway between +VCC and -VCC, or the manufacturer has the

option to connect the idle half in a VIO configuration such that the inputs are maintained at the same common

mode voltage as the device under test.

5/ Compensation: for device types 03, 04, 05, and 06 only, equals 30 pF; for device type 07 only, equals

330 pF (optional).

6/ Device types 01, all case types, and device type 02, case outlines A, B, C, and D only.

7/ Device types 03 and 05 only.

8/ See figure 6. Noise test circuit.

9/ As required, if needed to prevent oscillation. Also, proper wiring procedures shall be followed to prevent oscillation.

Loop response and settling time shall be consistent with the test rate such that any value has settled for at least

five loop time constants before the value is measured.

10/ Adequate settling time shall be allowed such that each parameter has settled to within five percent of its final value.

11/ The nulling amplifier is an M38510/10101XXX. Saturation of the nulling amplifier is not allowed on test where

the "E" value is measured.

12/ All resistors 0.1 percent tolerance except as noted (note 3).

13/ For device types 01, 02, 07, and 08: RS = 20 kΩ. For device types 03 and 05: RS = 100 kΩ.

For device types 04 and 06: RS = 5.0 MΩ.

14/ Device type 07 only, this capacitor = 1,000 pF maximum to prevent oscillations.

15/ Device type 07 only.

16/ To minimize thermal drift, the reference voltages for gain measurements (E3 and E4) shall be taken immediately

prior to or after the reading corresponding to device gain (E24, E25, E26, E27, E30, E31, E32, and E33).

The gain at RL = 10 kΩ is essentially the gain at RL = 2 kΩ is influenced by thermal gradients on the die resulting

from power dissipation in the output stage. Hence, it is not linear and may not even be a true approximation of the

gain between other than the specified operation points.

17/ Any oscillation greater that 300 mV in amplitude (pk - pk) shall be cause for device failure.

18/ Although sw itches are depicte d as toggle switches, any switching mechanism may be used provided the switching

action is achieved without adversely affecting the measurement.

19/ The load resistors (2,050 Ω and 11.1 kΩ) yield effective load resistances of 2 kΩ and 10 kΩ, respectively.

20/ The equations take into account both the loop gain of 1,000 and the scale factor multiplier, so that the calculated value

is in table III units. Therefore, use measured value / units in the equations, example E1 (volts).

FIGURE 3. Test circuit for static and dynamic tests- Continued.

25

MIL-M-38510/101J

See notes on page 29

Parameter

Pulse generator Measure Equation Units

Rise time (tr)

AV = 1 +50 mV amplitude t (µs),

see waveform 1 tr = t µs

Overshoot (OS)

AV = 1 +50 mV amplitude ∆V (mV),

see waveform 1 OS = (∆V / 50) x 100 %

Bandwidth (BW)

AV = 1 +50 mV amplitude Calculate BW = 0.35 / tr (µs) MHz

Slew rate (+SR)

AV = 1 -5 V to +5 V step ∆VO (volts),

∆t (µs)

see waveform 2

+SR = |∆VO(+) / ∆t(+)| V/µs

Slew rate (-SR)

AV = 1 +5 V to -5 V step ∆VO (volts),

∆t (µs)

see waveform 3

-SR = |∆VO(-) / ∆t(-)| V/µs

FIGURE 4. Transient response test circuit.

26

MIL-M-38510/101J

See notes on page 30

Parameter

Pulse generator Measure Equation Units

Rise time (tr)

+50 mV amplitude t (ns),

see waveform 1 tr = t ns

Overshoot (OS)

+50 mV amplitude ∆V (mV),

see waveform 1 OS = (∆V / 50) x 100 %

Bandwidth (BW)

+50 mV amplitude Calculate BW = (0.35 x 103) / tr (ns) MHz

Slew rate (+SR)

-5 V to +5 V step ∆VO (+) (volts),

∆t (+) (ns)

see waveform 2

+SR = |∆VO(+) / ∆t(+) x 10-3| V/µs

Slew rate (-SR)

+5 V to -5 V step ∆VO (-) (volts),

∆t (-) (ns)

see waveform 3

-SR = |∆VO(-) / ∆t(-) x 10-3| V/µs

Settling time tS(+) 5/

-5 V to +5 V step tS(+),

see waveform 2 tS(+) = tS(+) ns

Settling time tS(-) 5/

+5 V to -5 V step tS(-),

see waveform 3 tS(-) = tS(-) ns

FIGURE 4. Transient response test circuit - Continued.

27

MIL-M-38510/101J

(Alternate) device type 07

NOTES:

1. K1 is closed fo r small tests (Tr and P.O.) and is open for large signal tests ( ±slew rate, ±Ts).

2. Input signal is a -50 mV to 0 mV pulse train for small signal tests and -5 V to +5 V pulse train for large

signal tests.

3. Tr of the input signal is < 10 ns for the small signal tests.

FIGURE 4. Transient response test circuit - Continued.

28

MIL-M-38510/101J

NOTES:

1. Idle half of dual amplifier sha ll be conne cte d dur ing tes t of other half.

2. All resistor tolerances are 1 percent, capacitor tolerances are 10 percent and ±VCC = ±20 V.

3. This compensation capacitor is used for device types 03, 04, 05, and 06.

4. For device types 01, 02, 03, 05, and 08, RL = 2 kΩ; for device types 04 and 06, RL = 10 kΩ.

5. Settling time is the interval from the beginning of the output response to the point where the output remains

within the error band, in this case ±2 percent.

6. CF = 10 pF ±10 percent includ es stray capac itan ce.

7. R1 may be added to the circuit. When R1 is added, its value shall be 10 kΩ. When using R1, the unity gain

will increase to 2. To accommodate this change in gain, the pulse generator input shall be halved.

8. C1 may be added to the circuit. When added, it shall be within the range of 0 pF to 2 pF.

9. CL capacitance specified includes stray, jig, and probe capacitance.

FIGURE 4. Transient response test circuit - Continued.

29

MIL-M-38510/101J

Device types 02, 05, 06, and 08 only.

NOTES:

1. ±VCC = 20 V.

2. Measure: V02 (volts, p-p) at 1 kHz to accuracy of 0.1 mV or better.

3. Channel separation (dB) referred to input of second channel = 20 log [V01 / (0.1 x V02) ].

4. All resistor tolerances ≤ 1 percent.

5. A 30 pF compensation capacitor is required for device types 05 and 06.

FIGURE 5. Test circuit for channel separation.

30

MIL-M-38510/101J

Noise

Symbol S1 Measure Measured

equation Parameter

units

(Referred to

input) Value Units

Broadband

N1(BB) Closed E0 mV rms E0 / 1000 µV rms

Popcorn

N1(PC) Open E0 mV pk E0 / 1000 µV pk

NOTES:

1. RS = 20 kΩ for device types 01, 02, 07, and 08; RS = 100 kΩ for device types 03, 04, 05, and 06.

2. E0 is measured using an RMS voltmeter with a bandwidth of 10 Hz to 5 kHz and a peak detector

simultaneously. Monitor the peak test for a minimum of 15 seconds. The loop bandwidth shall be

at least 5 kHz.

FIGURE 6. Noise test circuit.

31

MIL-M-38510/101J

TABLE III. Group A inspection.

Unit

mV

"

nA

"

nA

"

nA

"

µV/V

dB

mV

Max

+4.0

"

+40

"

250

"

250

"

+100

-7

07 1/

Limits

Min

-4.0

"

-40

"

-0.1

"

-0.1

"

-100

80

+7

Max

+0.5

"

+0.2

"

+2.0

"

+2.0

"

+16

04, 06 1/

Limits

Min

-0.5

"

-0.2

"

-0.1

"

-0.1

"

-16

96

Max

+2.0

"

+10

"

75

"

75

"

+50

-4

03, 05 1/

Limits

Min

-2.0

"

-10

"

-0.1

"

-0.1

"

-50

80

+4

Max

+3.0

"

+30

"

110

"

110

"

+50

-5

01, 02, 08 1/

Limits

Min

-3.0

"

-30

"

-0.1

"

-0.1

"

-50

80

+5

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

+VCC = 10 V, -VCC = -20 V

+VCC = 20 V, -VCC = -10 V

VCM = +15 V

3/

Test

no.

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

19

20

21

MIL-STD

-883

method

4001

4003

Symbol

VIO

IIO

+IIB

-IIB

+PSRR

-PSRR

CMR

V

IO ADJ (+)

VIO ADJ (-)

Subgroup

1

TA =

+25°C

32

MIL-M-38510/101J

TABLE III. Group A inspection - Continued.

Unit

mA

mV

"

µV/°C

nA

"

pA/°C

nA

"

“

nA

"

“

Max

+65

8

+6.0

"

+50

+80

"

+1,000

250

"

250

"

07 1/

Limits

Min

-65

-6.0

"

-50

-80

"

-1,000

-0.1

"

-0.1

"

Max

+15

0.6

+1.0

"

+5.0

+0.4

"

+2.5

+2.0

"

+2.0

"

04, 06 1/

Limits

Min

-15

-1.0

"

-5.0

-0.4

"

-2.5

-1.0

"

-1.0

"

Max

+60

3.0

+3.0

"

+15

+10

"

+100

75

"

75

"

03, 05 1/

Limits

Min

-60

-3.0

"

-15

-10

"

-100

-0.1

"

-0.1

"

Max

+60

3.8

+4.0

"

+15

+30

"

+200

110

"

110

"

01, 02, 08 1/

Limits

Min

-60

-4.0

"

-15

-30

"

-200

-0.1

"

-0.1

"

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

±VCC = ±15 V, t ≤ 25 ms

±VCC = ±15 V 5/

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

∆VIO / ∆T = [VIO (test 27) - VIO (test 3)] x 10

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

∆IIO / ∆T = [IIO (test 32) - IIO (test 7)] x 10

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

Test

no.

22

23

24

25

26

27

28

29

30

31

32

33

34

35

36

37

38

39

40

41

42

MIL-STD

-883

method

3011

4005

4001

Symbol

IOS (+) 4/

IOS (-) 4/

ICC

VIO

∆VIO / 6/

∆T

IIO

∆IIO /

∆T

+IIB

-IIB

Subgroup

1

TA =

+25°C

2

TA =

+125°C

See footnotes at end of table III. 33

MIL-M-38510/101J

TABLE III. Group A inspection - Continued.

Unit

mA

µV /V

dB

mV

"

µV /°C

nA

"

pA/°C

Max

+60

3.4

+100"

-5

+4.0

"

“

+20

+70

"

“

+500

08 1/

Limits

Min

-60

-100

"

80

+5

-4.0

"

-20

-70

"

-500

Max

+65

7

+150

"

-7

+6.0

"

+50

+80

"

+1,000

07 1/

Limits

Min

-65

-150

"

80

+7

-6.0

"

-50

-80

"

-1,000

Max

+15

0.6

+16

"

+1.0

"

+5.0

+0.4

"

+2.5

04, 06 1/

Limits

Min

-15

-16

"

96

-1.0

"

-5.0

-0.4

"

-2.5

Max

+60

2.5

+100

"

-4

+3.0

"

+18

+20

"

+200

03, 05 1/

Limits

Min

-60

-100

"

80

+4

-3.0

"

-18

-20

"

-200

Max

+60

3.4

+100

"

-5

+4.0

"

+15

+70

"

+500

01, 02 1/

Limits

Min

-60

-100

"

80

+5

-4.0

"

-15

-70

"

-500

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

±VCC = ±15 V, t ≤ 25 ms

±VCC = ±15 V

+VCC = 10 V, -VCC = -20 V

+VCC = 20 V, -VCC = -10 V

VCM = ±15 V

3/

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

∆VIO / ∆T = [VIO (test 3) - VIO (test 53)] x 12.5

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

∆IIO / ∆T = [IIO (test 7) - IIO (test 58)] x 12.5

Test

no.

43

44

45

46

47

48

49

50

51

52

53

54

55

56

57

58

59

60

MIL-STD

-883

method

3011

4005

4003

4001

Symbol

IOS (+) 4/

IOS (-) 4/

ICC

+PSRR

-PSRR

CMR

VIO ADJ(+)

VIO ADJ(-)

VIO

∆VIO / 6/

∆T

IIO

∆IIO / 6/

∆T

Subgroup

2

TA =

+125°C

3

TA =

-55°C

See footnotes at end of table III.

34

MIL-M-38510/101J

TABLE III. Group A inspection - Continued.

Unit

nA

"

nA

"

mA

µV/V

dB

mV

V

"

Max

400

"

400

"

80

9

+150

-7

-17

-16

07 1/

Limits

Min

-0.1

"

-0.1

"

-65

-150

80

+7

+17

+16

Max

3.0

"

3.0

"

+15

0.8

+16

-16

04, 06 1/

Limits

Min

-0.1

"

-0.1

"

-15

-16

96

+16

Max

100

"

100

"

+60

3.5

+100

-4

-16

-15

03, 05 1/

Limits

Min

-0.1

"

-0.1

"

-60

-100

80

+4

+16

+15

Max

265

"

265

"

+60

4.2

+100

-5

-16

-15

01, 02, 08 1/

Limits

Min

-0.1

"

-0.1

"

-60

-100

80

+5

+16

+15

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

VCM = -15 V 2/

VCM = +15 V 2/

VCM = 0 V

±VCC = ±5 V, VCM = 0 V

±VCC = ±15 V, t ≤ 25 ms

±VCC = ±15 V 5/

+VCC = 10 V, -VCC = -20 V

+VCC = 20 V, -VCC = -10 V

VCM = ±15 V

3/

RL = 10 kΩ

RL = 2 kΩ

Test

no.

61

62

63

64

65

66

67

68

69

70

71

72

73

74

75

76

77

78

79

80

MIL-STD

-883

method

4001

3011

4005

4003

4004

Symbol

+IIB

-IIB

IOS (+) 4/

IOS (-) 4/

ICC

+PSRR

-PSRR

CMR

VIO ADJ(+)

VIO ADJ(-)

+VOP

-VOP

+VOP

-VOP

Subgroup

3

TA =

-55°C

4

TA =

+25°C

See footnotes at end of table III. 35

MIL-M-38510/101J

TABLE III. Group A inspection - Continued.

Unit

V/mV

"

V

"

V/mV

"

V

"

Max

-17

-16

-17

-16

07 1/

Limits

Min

50

10

+17

+16

32

10

+17

+16

Max

-16

04, 06 1/

Limits

Min

80

20

+16

40

20

+16

Max

-16

-15

-16

-15

03, 05 1/

Limits

Min

50

10

+16

+15

25

10

+16

+15

Max

-16

-15

-16

-15

01, 02, 08 1/

Limits

Min

50

10

+16

+15

25

10

+16

+15

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

RL = 2 kΩ, VOUT = +15 V

RL = 2 kΩ, VOUT = -15 V

RL = 10 kΩ, VOUT = +15 V

RL = 10 kΩ, VOUT = -15 V

RL = 2 kΩ, ±VCC = ±5 V, VOUT = ±2 V

RL = 10 kΩ, ±VCC = ±5 V, VOUT = ±2 V

RL = 10 kΩ

RL = 2 kΩ

RL = 2 kΩ, VOUT = +15 V

RL = 2 kΩ, VOUT = -15 V

RL = 10 kΩ, VOUT = +15 V

RL = 10 kΩ, VOUT = -15 V

RL = 2 kΩ, ±VCC = ±5 V, VOUT = ±2 V

RL = 10 kΩ, ±VCC = ±5 V, VOUT = ±2 V

RL = 10 kΩ

RL = 2 kΩ

Test

no.

81

82

83

84

85

86

87

88

89

90

91

92

93

94

95

96

97

98

99

100

MIL-STD

-883

method

4004

Symbol

+AVS

-AVS

+AVS

-AVS

AVS

+VOP

-VOP

+VOP

-VOP

+AVS

-AVS

+AVS

-AVS

AVS

+VOP

-VOP

+VOP

-VOP

Subgroup

4

TA =

+25°C

5

TA =

+125°C

6

TA =

-55°C

See footnotes at end of table III.

36

MIL-M-38510/101J

TABLE III. Group A inspection - Continued.

Unit

V/mV

"

ns

%

V/µs

dB

µV rms

µV pk

ns

%

V/µs

ns

%

V/µs

Max

40

50

25

80

40

50

40

50

07 1/

Limits

Min

32

10

40

30

40

Max

1,000

50

15

40

1,000

50

1,000

50

04, 06 1/

Limits

Min

40

20

0.05

80

0.05

Max

800

25

15

80

800

25

800

25

03, 05 1/

Limits

Min

25

10

0.3

80

0.3

0.2

Max

800

25

15

40

800

25

800

25

01, 02, 08 1/

Limits

Min

25

10

0.3

80

0.3

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

RL = 2 kΩ, VOUT = +15 V

RL = 2 kΩ, VOUT = -15 V

RL = 10 kΩ, VOUT = +15 V

RL = 10 kΩ, VOUT = -15 V

RL = 2 kΩ, ±VCC = ±5 V, VOUT = ±2 V

RL = 10 kΩ, ±VCC = ±5 V, VOUT = ±2 V

Figure 4

Figure 4, AV = 1, VIN = -5 V to +5 V

Figure 4, AV = 1, VIN = +5 V to -5 V

Figure 5

BW = 5 kHz, figure 6

TA = +125°C, figure 4

TA = +125°C, figure 4, AV = 1, VIN = -5 V to +5 V

TA = +125°C, figure 4, AV = 1, VIN = +5 V to -5 V

TA = -55°C, figure 4

TA = -55°C, figure 4, AV = 1, VIN = -5 V to +5 V

TA = -55°C, figure 4, AV = 1, VIN = +5 V to -5 V

Test

no.

101

102

103

104

105

106

107

108

109

110

111

112

113

114

115

116

117

118

119

120

121

MIL-STD

-883

method

4002

Symbol

+AVS

-AVS

+AVS

-AVS

AVS

TR(tr)

TR(OS)

SR(+)

SR(-)

CS 7/

NI(BB)

NI(PC)

TR(tr)

TR(OS)

SR(+)

SR(-)

TR(tr)

TR(OS)

SR(+)

SR(-)

Subgroup

6

TA =

-55°C

7

TA =

+25°C

8A

TA =

+125°C

8B

TA =

-55°C

See footnotes at end of table III.

37

MIL-M-38510/101J

TABLE III. Group A inspection - Continued.

Unit

ns

Max

800

1,200

07 1/

Limits

Min

Max

04, 06 1/

Limits

Min

Max

03, 05 1/

Limits

Min

Max

01, 02, 08 1/

Limits

Min

Conditions

±VCC = ±20 V dc, figure 3

unless otherwise specified

TA = +25°C, figure 4

TA = +125°C, figure 4

TA = -55°C, figure 4

Test

no.

122

123

124

125

126

127

MIL-STD

-883

method

4002

Symbol

tS(+)

tS(-)

tS(+)

tS(-)

tS(+)

tS(-)

Subgroup

12

TA =+25°C

13A

TA =+125°C

13B

TA =-55°C

1/ For devices marked with the “Q” certification mark, the parameters listed herein may be guaranteed if not tested to the limits specified herein in accordance with the manufacturer’s

QM plan. Limits apply to both halves of dual devices (02, 05, 06, and 08) independently, and slew rate limit for device 08 is 0.4 V/µs at all temperatures (tests 109, 110, 116, 117,

120, 121).

2/ VCM is achieved by algebraically subtracting the common mode voltage from each supply and algebraically adding the common mode voltage to V

(example, for

V

CM = -15 V, +VCC = +35 V, -VCC = -5 V, V = -15 V).

3/ VIO (ADJ) is not performed on device type 02, case I only, or on device types 04, 06, and 08 all case types.

4/ Due to the significant power dissipation and associated device heating, these tests shall always be the last tests performed in any given sequence, followed by operational

verification (example , such tests as VOPP, AVS, TR, SR).

5/ Limit shown applied to single devices (01, 03, and 04) only. The maximum quiescent ICC for dual devices (02, 05, 06, and 08) is twice that shown for single devices.

6/ Tests 29, 34, 55, and 60 which require a read and record measurement plus a calculation, may be omitted except when subgroups 2 and 3 are being accomplished for group A

sampling inspection and group C and D endpoint measurements.

7/ Applies to device types 02, 05, and 06 only.

38

MIL-M-38510/101J

TABLE IV. Group C end point electrical parameters.

(TA = +25°C, VCC = ±20 V, V CM = 0 V)

Table III

test no. Test 01, 02, 08 03, 05 Unit

Limit Delta Limit Delta

Min Max Min Max Min Max Min Max

3

VIO -3.0 +3.0 -0.5 +0.5 -2.0 +2.0 -0.5 +0.5 mV

11

+IIB +1.0 +110 -12 +12 +1.0 +75 -7.5 +7.5 nA

15

-IIB +1.0 +110 -12 +12 +1.0 +75 -7.5 +7.5 nA

Table III

test no. Test 04, 06 07 Unit

Limit Delta Limit Delta

Min Max Min Max Min Max Min Max

3

VIO -0.5 +0.5 -0.25 +0.25 -4.0 +4.0 -1.0 +1.0 mV

11

+IIB -0.1 +2.0 -0.5 +0.5 +1.0 250 -25 +25 nA

15

-IIB -0.1 +2.0 -0.5 +0.5 +1.0 250 -25 +25 nA

39

MIL-M-38510/101J

4.3 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-38535.

4.4 Technology Conformance inspection (TCI). Technology conformance inspection shall be in accordance with MIL-

PRF-38535 and herein for groups A, B, C, and inspections (see 4.4.1 through 4.4.4).

4.4.1 Group A inspection. Group A inspection shall be in accordance wi th table III of MIL-PRF-38535 and as follows:

a. Subgroups 9, 10, and 11 shall be omitted.

b. Tests shall be as specif ied in table II her ein.

c. Subgroups 12 and 13 (for device type 07 on ly) shall be added to table III of MIL-PRF-38535 for class S only.

The class S sample size series for subgroup 12 shall be 5 and for subgroup 13 the class S sample size

series shall be 7.

4.4.2 Group B inspection. Group B inspection shall be in accordance with table II of MIL-PRF-38535.

4.4.3 Group C inspection. Group C inspection shall be in accordance with table IV of MIL-PRF-38535 and as follows:

a. End point electrical parameters shall be as specified in table II herein.

b. Subgroups shall be added to group C inspection and shall consist of subgroups 8, 12, and 13

respectively as specified in table III herein. The sample size series for subgroup 12 shall be 5, and

subgroup 13 shall be 7 for class B devices (see MIL-PRF-38535, Appendix D).

c. The steady-state life test duration, test condition, and test temperature, or approved alternatives shall be as

specified in the device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall

be maintained under document control by the device manufacturer's Technology Review Board (TRB) in

accordance wi th MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request.

The test circuit shall specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with

the intent specified in test method 1005 of MIL-STD-883.

4.4.4 Group D inspection. Group D inspection shall be in accordance with table V of MIL-PRF-38535. End point electrical

parameters shall be as specified in table II herein.

4.5 Methods of inspection. Methods of inspection shall be specified and as follows.

4.5.1 Voltage and current. All voltage values given, except the input offset voltage (or differential voltage) are referenced

to the external zero reference level of the supply voltage. Currents given are conventional current and positive when flowing

into the referenced terminal.

4.5.2 Burn-in and life test cooldown procedure. When devices are measured at +25°C following application of the steady

state life or burn-in condition, they shall be cooled to within 10°C of their power stable condition at room temperature prior to

removal of the bias.

40

MIL-M-38510/101J

5. PACKAGING

5.1 Packaging requirements. For acquisition purposes, the packaging requirements shall be as specified in the contract

or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to

contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are

maintained by the Inventory Control Point's packaging activity within the Military Department of Defense Agency, or within

the Military Department's System Command. Packaging data retrieval is available from the managing Military Department's

or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity.

6. NOTES

(This section contains information of a general or explanatory nature which may be helpful, but is not mandatory.)

6.1 Intended use. Microcircuits conforming to this specification are intended for original equipment design applications

and logistic support of existing equipment.

6.2 Acquisition requirements. Acquisition documents should specify the following:

a. Title, number, and date of the specification.

b. Complete part number (see 1.2).

c. Requirements for delivery of one copy of the quality conformance inspection data pertinent to the device

inspection lot to be supplied with each shipment by the device manufacturer, if applicable.

d. Requirements for certificate of compliance, if applicable.

e. Requirements for notification of change of product or process to acquiring activity in addition to

notification of the qualifying activity, if applicable.

f. Requirements for failure analysis (including required test condition of MIL-STD-883, method 5003),

corrective action and reporting of results, if applicable.

g. Requirements for product assurance options.

h. Requirements for special carriers, lead lengths, or lead forming, if applicable. These requirements shall not

affect the part number. Unless otherwise specified, these requirements will not apply to direct purchase by

or direct shipment to the Government.

j. Requirements for "JAN" marking.

6.3 Superseding information. The requirements of MIL-M-38510 have been superseded to take advantage of the

available Qualified Manufacturer Listing (QML) system provided by MIL-PRF-38535. Previous references to MIL-M-38510

in this document have been replaced by appropriate references to MIL-PRF-38535. All technical requirements now consist

of this specification and MIL-PRF-38535. The MIL-M-38510 specification sheet number and PIN have been retained to

avoid adversely impacting existing government logistics systems and contractor's parts lists.

41

MIL-M-38510/101J

6.4 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the

time of award of contract, qualified for inclusion in Qualified Manufacturers List QML-38535 whether or not such products

have actually been so listed by that date. The attention of the contractors is called to these requirements, and

manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for

qualification in order that they may be eligible to be awarded contracts or purchase orders for the products covered by this

specification. Information pertaining to qualification of products may be obtained from DSCC-VQ, 3990 E. Broad Street,

Columbus, Ohio 43123-1199.

6.5 Abbreviations, symbols, and definitions. The abbreviatio ns, symbols, and definition s used herein are defined in

MIL-PRF-38535 and MIL-HDBK-1331.

6.6 Logistic support. Lead materials and finishes (see 3.4) are interchangeable. Unless otherwise specified,

microcircuits acquired to Government logistic support will be acquired to device class B (see 1.2.2), and lead material and

finish A (see 3.4). Longer length leads and lead forming shall not affect the part number.

6.7 Substitutability. The cross-reference information below is presented for the convenience of users. Microcircuits

covered by this specification will functionally replace the listed generic-industry type. Generic-industry microcircuit types

may not have equivalent operational performance characteristics across military temperature ranges or reliability factors

equivalent to MIL-M-38510 device types and may have slight physical variations in relation to case size. The presence of

this informat ion shall not be de emed as per mitt ing sub sti tuti on of generic-industry types for MIL-M-38510 types or as a

waiver of any of the provisions of MIL-PRF-38535.

Military device type Generic-industry type

01 741A

02

747A (with common +VCC)

03 LM101A

04 LM108A

05 LH2101A

06 LH2108A

07 LM118

08 1558

6.7 Changes from previous issue. Asterisks are not used in this revision to identify changes wi th respect to the previous

issue, due to the extensiveness of the changes.

Custodians: Preparing activity:

Army - CR DLA - CC

Navy - EC

Air Force - 11 Project 5962-1950

NASA - NA

DLA - CC

Review activities:

Army – HD, MI, SM

Navy - AS, CG, MC, SH, TD

Air Force – 03, 19, 99

42

STAND ARDIZATION DOCUMENT IM PROVEMENT PROPOSAL

INSTRUCTIONS

1. The preparing activit y must complet e bl ocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given.

2. The submitter of this form must complete blocks 4, 5, 6, and 7, and send to preparing activity.

3. The preparing activit y must provide a reply withi n 30 days from receipt of the form.

NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarific ation of requirem e nts on current con tracts.

Comments submitt ed on this form do not constit ute or imply authorizat i on to waive any portion of the referenced document(s) or to amend

contract ual requi rements.

I RECOMM E ND A CH ANGE:

1. DOCUMENT NUMBER

MIL-M-38510/101J 2. DOCUMENT DAT E (YYYYMMDD)

2003/02/07

3. DOCUMENT TITLE

MICROCIRCUITS, LINEAR, OPERATIONAL AMPLI FIE RS, MONOLIT HIC SILICON, PART NUMBER M38510/10101 THROUGH M38510/10108

4. NATURE OF CHANGE (Identify paragraph number and inc l ude proposed rewrite, if possible. Attach extra sheets as needed.)

5. REASON FOR RECOMMENDATI O N

6. SUBMITTER

a. NAME (Last, First Middle Initial)

b. ORGANIZATION

c. ADDRESS (Incl ude Zip Code)

d. TELEPHONE (Include Area Code)

(1) Commercial

(2) DSN

(If applicabl e)

7. DATE SUBMITTED

(YYYYMMDD)

8. PREPAR ING ACTIVI TY

a. NAME

Rick Officer

b. TELEPHONE (Include Area Code

(1) Commercial (2) DSN

614-692-0518 850-0518

c. ADDRESS (Incl ude Zip Code)

DSCC-VAS

3990 East Broad Street

Columbus, Ohio 43216-5000

IF YOU DO NOT RECEIVE A REPLY WIT HIN 45 DAYS , CONT ACT:

Defense Standardization Program Office (DLSC-LM)

8725 John J. Ki ngman Road, Suite 2533

Fort Belvoir, Virginia 22060-6221

Telephone (703)767-6888 DSN 427-6888

DD Form 1426, FEB 1999 (EG) PRE VIOUS EDITIONS ARE OBSOLETE.

WHS/DIOR, Feb 99