MPS6520
MPS6521
SILICON
NPN TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPS6520 and
MPS6521 are silicon NPN epitaxial transistors designed
for complementary amplifier applications requiring
low noise and high DC current gains. The PNP
complementary devices are MPS6522 and MPS6523
respectively.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 4.0 V
Continuous Collector Current IC 100 mA
Power Dissipation PD 625 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
ICBO V
CB=30V 50 nA
ICBO V
CB=30V, TA=60°C 1.0 μA
BVCEO I
C=500μA 25 V
BVEBO I
E=10μA 4.0 V
VCE(SAT) I
C=50mA, IB=5.0mA 0.5 V
fT V
CE=10V, IC=2.0mA 300 MHz
fT V
CE=10V, IC=10mA 400 MHz
Cob V
CB=10V, IE=0, f=100kHz 3.5 pF
NF VCE=5.0V, IC=10μA,
R
S=10KΩ, BW=15.7kHz,
3.0dB points @ 10Hz and 10kHz 3.0 dB
MPS6520 MPS6521
SYMBOL TEST CONDITIONS MIN MAX MIN MAX
hFE VCE=10V, IC=100μA 100 - 150 -
hFE V
CE=10V, IC=2.0mA 200 400 300 600
R1 (11-November 2014)
www.centralsemi.com
MPS6520
MPS6521
SILICON
NPN TRANSISTORS
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
TO-92 CASE - MECHANICAL OUTLINE
www.centralsemi.com
R1 (11-November 2014)
For the latest version of Central Semiconductor’s LIMITATIONS AND DAMAGES DISCLAIMER,
which is part of Central’s Standard Terms and Conditions of sale, visit: www.centralsemi.com/terms
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(001)
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