© 2008 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Maximum Ratings
VCES TC = 25°C to 150°C 1700 V
VCGR TJ = 25°C to 150°C, RGE = 1MΩ 1700 V
VGES Continuous ± 20 V
VGEM Transient ± 30 V
IC25 TC = 25°C 40 A
IC90 TC = 90°C 16 A
ICM TC = 25°C, 1ms 120 A
SSOA VGE = 15V, TVJ = 125°C, RG = 22Ω ICM = 40 A
(RBSOA) Clamped inductive load VCES ≤ 1350 V
PCTC = 25°C 250 W
TJ -55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6mm (0.062 in.) from case for 10s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-247) 1.13/10 Nm/lb.in.
Weight TO-247 6 g
TO-268 4 g
DS98657B(10/08)
IXBH16N170
IXBT16N170
G = Gate C = Collector
E = Emitter TAB = Collector
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1700 V
VGE(th) IC = 250μA, VCE = VGE 3.0 5.5 V
ICES VCE = 0.8 • VCES 50 μA
VGE = 0V TJ = 125°C 2 mA
IGES VCE = 0V, VGE = ± 20V ±100 nA
VCE(sat) IC = 16A, VGE = 15V, Note 1 3.3 V
TJ = 125°C 3.2 V
VCES = 1700V
IC90 = 16A
VCE(sat) ≤≤
≤≤
≤ 3.3V
TO-247 (IXBH)
GCEC (TAB)
TO-268 (IXBT)
GE
C (TAB)
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Features
zHigh blocking voltage
zInternational standard packages
zLow conduction losses
Advantages
zLow gate drive requirement
zHigh power density
Applications:
zSwitched-mode and resonant-mode
power supplies
zUninterruptible power supplies (UPS)
zLaser generator
zCapacitor discharge circuit
zAC switches
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IXYS reserves the right to change limits, test conditions and dimensions.
IXBH16N170
IXBT16N170
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfS IC = 16A, VCE = 10V, Note 1 8.5 14 S
Cies 1960 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 85 pF
Cres 24 pF
Qg 72 nC
Qge IC = 16A, VGE = 15V, VCE = 0.5 • VCES 12 nC
Qgc 25 nC
td(on) 38 ns
tr 101 ns
td(off) 125 ns
tf 480 ns
td(on) 37 ns
tr 183 ns
td(off) 235 ns
tf 705 ns
RthJC 0.50 °C/W
RthCS 0.25 °C/W
Note 1: Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-247 (IXBH) Outline
1 2 3
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
Resistive Switching times, TJ = 125°C
IC = 16A, VGE = 15V
VCE = 850V, RG = 22Ω
Resistive Switching times, TJ = 25°C
IC = 16A, VGE = 15V
VCE = 850V, RG = 22Ω
Reverse Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
VF IF = 16A, VGE = 0V 2.6 V
trr 1.32 μs
IRM 26 A
IF = 8A, VGE = 0V, -diF/dt = 100A/μs
VR = 100V, VGE = 0V
TO-268 (IXBT) Outline
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© 2008 IXYS CORPORATION, All rights reserved
IXBH16N170
IXBT16N170
Fig. 1. Output Characteristics
@ 25ºC
0
4
8
12
16
20
24
28
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
Fig. 2. Extended Output Characteristics
@ 25º C
0
20
40
60
80
100
120
140
0 3 6 9 12 15 18 21 24 27 30
V
CE
- Volts
I
C
-
Amperes
V
GE
= 15V
11V
7V
13V
9V
Fig. 3. Output Characteristics
@ 125ºC
0
4
8
12
16
20
24
28
32
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
9V
7V
5V
Fig. 4. Dependence of V
CE(sat)
on
Jun ction Temperatu r e
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
V
GE
= 15V
I
C
= 32A
I
C
= 16A
I
C
= 8A
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to -Emi tter Vo l tag e
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
5 6 7 8 9 101112131415
V
GE
- Volts
V
CE
- Volts
I
C
= 32A
T
J
= 25ºC
8A
16A
Fig. 6. Input Admittance
0
5
10
15
20
25
30
35
40
45
50
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5
V
GE
- Volts
I
C
-
Amperes
T
J
= - 40ºC
25ºC
125ºC
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IXYS reserves the right to change limits, test conditions and dimensions.
IXBH16N170
IXBT16N170
IXYS REF: B_16N170(4A)10-06-08
Fig. 7. Transconductance
0
2
4
6
8
10
12
14
16
18
20
22
24
0 5 10 15 20 25 30 35 40 45 50 55
I
C
- Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Gate Charge
0
2
4
6
8
10
12
14
16
0 1020304050607080
Q
G
- NanoCoulombs
V
GE
- Volts
V
CE
= 850V
I
C
= 16A
I
G
= 10mA
Fig. 11. Reverse-Bias Safe Operating Area
0
5
10
15
20
25
30
35
40
45
200 400 600 800 1000 1200 1400 1600 1800
V
CE
- Volts
I
C
- Amperes
T
J
= 125ºC
R
G
= 22Ω
dV / dt < 10V / ns
Fig. 10. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
CE
- Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
Fig. 12. Maximum Transient Thermal
Impedance
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
Fig. 8. Forward Voltage Drop of
Intrinsic Diode
0
5
10
15
20
25
30
35
40
45
50
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6
V
F
- Volts
I
F
- Amperes
T
J
= 125ºC
T
J
= 25ºC
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© 2008 IXYS CORPORATION, All rights reserved
IXBH16N170
IXBT16N170
IXYS REF: B_16N170(4A)10-06-08
Fi g. 14. R esi stive Tu r n -on
Ri se Time vs. Dr ai n Cu r r ent
0
50
100
150
200
250
300
350
8 101214161820222426283032
I
C
- Amperes
t
r
- Nanoseconds
R
G
= 22Ω
V
GE
= 15V
V
CE
= 850V T
J
= 125ºC
T
J
= 25ºC
Fi g. 15. R esi stive Tu r n -on
Switc h i n g Times vs . Gate R esi s tan ce
0
100
200
300
400
500
600
700
800
20 40 60 80 100 120 140 160
R
G
- Ohms
t
r
- Nanoseconds
20
40
60
80
100
120
140
160
180
t d(on)
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V I
C
= 32A
I
C
= 16A
Fig. 16. Resistive T urn-off
Switching Times vs. Junction T emperature
200
300
400
500
600
700
800
900
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
f
- Nanoseconds
190
200
210
220
230
240
250
260
t d(off)
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 22Ω, V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
Fi g. 17. R esi stive Tu r n -off
Switching Times vs. Drain Current
200
300
400
500
600
700
800
900
1000
1100
1200
8 101214161820222426283032
I
C
- Amperes
t
f
- Nanoseconds
160
180
200
220
240
260
280
300
320
340
360
t d(off)
- Nanoseconds
t
f
t
d(off)
- - -
-
R
G
= 22Ω, V
GE
= 15V
V
CE
= 850V
T
J
= 125ºC
T
J
= 25ºC
Fi g. 13. R esi stive Turn -o n
Ri se Ti me vs. Jun cti o n Temp er atur e
60
100
140
180
220
260
300
340
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanoseconds
R
G
= 22Ω
V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
Fig. 18. Resistive T urn-off
Switchi n g Times vs. Gate Resi stance
300
400
500
600
700
800
900
1000
20 40 60 80 100 120 140 160
R
G
- Ohms
t
f
- Nanoseconds
0
200
400
600
800
1000
1200
1400
t d(off)
- Nanoseconds
t
f
t
d(off
)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 850V
I
C
= 32A
I
C
= 16A
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