TB6674FG(O,EL) - TOSHIBA

TB6674PG/FG/FAG

Ver.3 2010-07-07

TOSHIBA BiCD Integrated Circuit Silicon Monolithic

TB6674PG, TB6674FG, TB6674FAG

Stepping Motor Driver IC

TB6674PG, TB6674FG, and TB6674FAG are stepping motor

driver ICs with MOS output transistors.

The ICs can control two-phase stepping motor forward and

reverse by bipolar driving. They have a power-saving circuit and

a standby circuit.

Features

z They are similar substituting products of TA7774PG,

TA7774FG, and TA7774FAG. Both products have same

packages and same pin assignments.

z One-chip two-phase bipolar stepping motor driver (including

two bridge drivers)

z Power saving operation is available.

z Standby operation is available.

Current consumption ≤ 20 μA (typ.)

z Built-in punch-through current restriction circuit for system

reliability and noise suppression.

z TTL-compatible inputs INA, INB, PS, and Vs2B terminals

z ON resistance PS = L : 2.9 Ω (Typ.)

PS = H: 7.9 Ω (Typ.)

z High driving ability.

: IO (START) 350 mA (MAX.) : VS1 ENABLE

: IO (HOLD) 100 mA (MAX.) : VS2 ENABLE

: IO (START) 100 mA (MAX.) : VS1 ENABLE

: IO (HOLD) 50 mA (MAX.) : VS2 ENABLE

z Typical PKG DIP16 pin, HSOP16 pin, SSOP16 pin

z GND terminal = HEAT SINK

z Process :BiCD0.6 (30 V)

z Over current shutdown circuit (ISD).

z Thermal shutdown circuit (TSD).

z Undervoltage lockout circuit (UVLO).

z Pull-down resistance for input terminal (250 kΩ).

TB6674PG

TB6674FG

TB6674FAG

Weight

DIP16-P-300-2.54A: 1.11 g (typ.)

HSOP16-P-300-1.00: 0.50 g (typ.)

SSOP16-P-225-1.00A: 0.14 g (typ.)

The following conditions apply to solderability:

About solderability, following conditions were confirmed

(1)Use of Sn-37Pb solder Bath

·solder bath temperature: 230℃

·dipping time: 5 seconds

·the number of times: once

·use of R-Type flux

(2)Use of Sn-3.0Ag-0.5Cu solder Bath

·solder bath temperature: 245℃

·dipping time: 5 seconds

·the number of times: once

·use of R-t

e flux

TB6674PG/FG/FAG

Ver.3 2010-07-07

Block Diagram

Note: TB6674FG: Terminals 2, 7, 12, and 13 are NC.

TB6674FG: The heat fin is connected to GND.

Pin Description

Pin No. Symbol Functional Description

1 / (1) VS2 A Low-voltage power supply terminal

2 / (3) VCC Power voltage supply terminal for control

3 / (4) IN A A-ch forward rotation / reverse rotation signal input

terminal, Truth Table 1

4 / (F) GND GND terminal

5 / (F) GND GND terminal

6 / (5) IN B B-ch forward rotation / reverse rotation signal input

terminal, Truth Table 1

7 / (6) PS Power saving signal input terminal

8 / (8) VS2 B Standby signal input terminal, Truth Table 2

9 / (9) VS1 B High-voltage power supply terminal

10 / (10) φB Output B

11 / (11) ΦB Output B

12 / (F) GND GND terminal

13 / (F) GND GND terminal

14 / (14) ΦA Output Α

15 / (15) φA Output A

16 / (16) VS1 A High-voltage power supply terminal.

Pin No. of ( ) :TB6674FG

TB6674PG/FAG

TB6674FG

Bridge

driver Bridge

driver

TB6674PG/FG/FAG

Ver.3 2010-07-07

Truth Table 1.

Input Output

PS IN φ Φ

L L L H ENABLE VS1

L H H L ENABLE VS1

H L L H ENABLE VS2 (Power saving)

H H H L ENABLE VS2 (Power saving)

Truth Table 2.

VS2B

L POWER OFF (Standby mode)

H OPERATION

Note: Apply 5 V to VS2A as a supply terminal.

Input terminal

(INA, INB, PS, and Vs2B)

The diagram is partly-provided and omitted or simplified for explanatory purposes.

Vcc

250 kΩ

15 kΩ

TB6674PG/FG/FAG

Ver.3 2010-07-07

Absolute Maximum Ratings (Ta = 25°C)

Characteristic Symbol Rating Unit

VCC 6.0

VS1 24.0

Supply voltage

VS2 Up to VCC

IO (PEAK) ±400

IO (START) ±350

TB6674PG

TB6674FG

IO (HOLD) ±100

IO (PEAK) ±200

IO (START) ±100

Output current

TB6674FAG

IO (HOLD) ±50

Input voltage VIN Up to VCC V

1.4 (Note 1)

TB6674PG

2.7 (Note 2)

0.9 (Note 3)

TB6674FG

1.4 (Note 4)

Power

dissipation

TB6674FAG

0.78 (Note 5)

Operating temperature Topr －30 to 75 °C

Storage temperature Tstg －55 to 150 °C

Note 1: IC only

Note 2: This value is obtained if mounting is on a 50 mm × 50 mm × 0.8 mm PCB, 60 % or more of which is occupied

by copper.

Note 3: IC only

Note 4: This value is obtained if mounting is on a 60 mm × 30 mm × 1.6 mm PCB, 50 % or more of which is occupied

by copper.

Note 5: This value is obtained if mounting is on a 50 mm × 50 mm × 1.6 mm PCB, 40 % or more of which is occupied

by copper.

Operating Conditions (Ta = 25°C)

Characteristic Symbol Min. Typ. Max. Unit

VCC 4.5 － 5.5

VS1 8.0 － 22.0

Supply voltage

VS2A 2.7 － 5.5

TB6674PG

TB6674FG IO －－ ±350

Output current

TB6674FAG IO －－ ±100

Input voltage VIN 0 － VCC V

Maximum frequency of input pulse fIN －－ 25 kHz

Minimum resolution of input pulse tw 20 －－ μs

Value of ON resistance tends to increase when the difference between Vs1 and Vs2A becomes 5 V or less.

TB6674PG/FG/FAG

Ver.3 2010-07-07

Electrical Characteristics (Unless otherwise specified, Ta = 25°C, VCC = 5 V, VS1 = 12 V,

and VS2A = 5 V)

* ： Toshiba does not implement testing before shipping.

Characteristic Symbol

Test

Cir−

cuit

Test Condition Min Typ. Max Unit

ICC1 PS: H, VS2B: H ― 3 5

ICC2 PS: L, VS2B: H ― 3 5

Supply current

ICC3

VS2B: L ― 1 20 μA

High VIN H 2.0 ― Vcc

Input voltage

Low VIN L

―

－0.2 ― 0.8

Input hysteresis voltage* VINhys 1

INA, INB, PS, Vs2B

⎯ 90 ⎯ mV

IIN (H)

INA, INB, PS, Vs2B

VIN = 5.0 V

Built in pull-down resistance.

5 20 38

μA

Input current

IIN (L)

VIN = 0 V ⎯ ⎯ 1 μA

Ron 1H 2 PS: L, VS2B: H IOUT = 400 mA ― 2 5

Ron 2H 3 PS: H, VS2B: H IOUT = 100 mA ― 7 16

TB6674PG

TB6674FG

Ron L 2 VS2B: H IOUT = 400 mA ― 0.9 3.5

Ron 1H 2 PS: L, VS2B: H IOUT = 200 mA ― 2 5

Ron 2H 3 PS: H, VS2B: H IOUT = 50 mA ― 7 16

Output ON

resistance

(Note)

TB6674FAG

Ron L 2 VS2B: H IOUT = 200 mA ― 0.9 3.5

Ω

VF U ― 1.2 2.5

Diode forward voltage

VF L

4 IF = 350 mA, PS = L

― 1.0 2.2

tpLH ― 0.5 ―

Delay time

tpHL

― IN − φ

― 0.5 ―

μs

Thermal shutdown circuit* TSD ― (Design target only) ― 160 ― °C

TSD hysteresis * TSDhys ― (Design target only) ― 20 ― °C

TB6674PG/FG/FAG

Ver.3 2010-07-07

Undervoltage Lockout Circuit（UVLO）

The TB6674 incorporates an under voltage lockout circuit.

Outputs are turned off (Hi-Z) under the conditions as follows;

VCC ≤ 4.0 V (Design target) or

VS1A ≤ 6.0 V (Design target) and VS1B ≤ 6.0 V (Design target) or

VS2A ≤ 2.2 V (Design target)

The UVLO circuit has a hysteresis and the function recovers under the conditions as follows;

VCC = 4.1 V (Design target), VS1A/ VS1B = 6.5 V (Design target), VS2A = 2.3 V (Design target)

4.1 V (design target only)

Vcc voltage

UVLO internal signal

4.0 V (design target only)

Output pin

Normal operation OFF（Hi-Z）

UVLO operation

OFF（Hi-Z）

6.5 V (design target only)

Vs1

, Vs1B voltage

6.0 V (design target only)

Output pin

Normal operation

UVLO internal signal

TB6674PG/FG/FAG

Ver.3 2010-07-07

2.3 V (design target only)

Vs2A voltage

2.2 V (design target only)

OFF（Hi-Z）

Output pin

Normal operation

UVLO operation

UVLO internal signal

TB6674PG/FG/FAG

Ver.3 2010-07-07

Over Current Protection (ISD) Circuit

The IC incorporates the over current protection circuit that monitors the current flowing through each

output power transistor. If a current, which is out of the detecting current, is sensed at any one of these

transistors, all output transistors are turned off (Hi-Z). (However, ISD is not incorporated in upper

PchDMOS when PS is high level (Vs2A is 5 V usage) because ON resistance is large.

Masking time is 20 μs. The operation does not recover automatically (latch method). There are two

recovery methods written below.

(1) Power monitor turns on when any of the power supply decreases and reaches the specified voltage.

(2) Vs2B is set low level for 20 μs or more and then set high. The operation recovers in 10 μs.

Reference design target of detecting current is as follows;

PS = L, VS1A (12 V) :PchDMOS = 1.1 A

PS = H/PS = L in common :Lower NchDMOS = 1.4 A

Please reduce the external noise to prevent malfunction for ISD.

ISD internal signal

Normal operation OFF（Hi-Z）

ISD detecting value

20 μs

(Design target)

Output current

OFF time

UVLO (Power monitor)

Power monitoring: OFF Power monitoring: ON

Output terminal

Vs2B

20 μs 10 μs

(Design target) (Design target)

Operation recovers by

one of two cases.

Power monitoring: ON

TB6674PG/FG/FAG

Ver.3 2010-07-07

Thermal Shutdown Circuit (TSD)

The TB6674 incorporates a thermal shutdown circuit. If the junction temperature (Tj) exceeds 160°C

(design target only), all the outputs are tuned off（Hi-Z）.

It recovers automatically at 140℃. It has a hysteresis width of 20℃.

TSD = 160°C (design target only)

160°C (typ.)

Chip temperature

Internal TSD signal

< TSD operation >

Output terminal

Normal operation OFF（Hi-Z）

TSD operation

140°C (typ.)

TB6674PG/FG/FAG

2010-08-25

Test Circuit 1. ICC1, ICC2, ICC3, IIN A, IIN B, and IPS

Item SW1 SW2 SW3 SW4

ICC1 b b a a

ICC2 b b b a

ICC3 b b ― b

IIN A a ― ― a

IIN B ― a ― a

IPS ― ― a a

All terminals of INA, INB, and PS should output low or be connected to the ground terminal in measuring ICC3.

TB6674PG,

FG/FAG

TB6674PG/FAG

TB6674FG

TB6674PG/FG/FAG

2010-08-25

Test Circuit 2. Ron 1H1, Ron 1H2, Ron L2, and Ron L3

*: Adjust RL to correspond to IL.

Item SW1 SW2 SW3 SW4 SW5 IL (mA)

a ― a

b ― b

― a d

VSAT 1H1

― b

a 100

a ― a

b ― b

― a d

VSAT 1H2

― b

a 400

a ― b

b ― a

― a c

VSAT L2

― b

―

b 100

a ― b

b ― a

― a c

VSAT L3

― b

b 400

TB6674PG,

FG/FAG

TB6674PG/FG/FAG

2010-08-25

Test Circuit 3. Ron 2H1, Ron 2H2, and Ron L1

*: Adjust RL to correspond to IL.

Item SW1 SW2 SW3 SW4 SW5 IL (mA)

a ― a

b ― b

― a c

VSAT 2H1

― b

a 20

a ― a

b ― b

― a c

VSAT 2H2

― b

a 100

a ― b

b ― a

― a c

VSAT L1

― b

b 20

TB6674PG,

FG/FAG

TB6674PG/FG/FAG

2010-08-25

Test Circuit 4. VF U, and VF L

Item SW1 SW2

VF U

VF L e

Timing Chart (two-phase excitation)

Measuring Method

TB6674PG,

FG/FAG

TB6674PG/FG/FAG

2010-08-25

Thermal Performance Characteristics

Application Circuit

Note 1: Connect the VS2A terminal to the lower supply voltage (5 V).

Note 2: Supply smoothing capacitor* should be connected between each supply terminal (Vcc, VS2A, and VS1A/B)

and GND terminal. *: (Ex.): Capacitors of tens of μF and 0.1 μF which are connected in parallel.

Note 3: Utmost care is necessary in the design of the output, VCC, VM, and GND lines since the IC may be destroyed

TB6674PG TB6674FG

TB6674FAG

Mounting on a PCB of 50 mm

x 50 mm x 0.8 mm, 60% or

more of which is occupied by

copper

No heat sink

Mounting on a PCB of 60 mm x

30 mm x1.5 mm, 50% or more of

which is occupied by coppe

No heat sink

Thermal resistance

Power Dissipation

Ambient Temperature Ambient Temperature

Ambient Temperature Ta (°C)

Power Dissipation PD (W)

Thermal resistance

Rth(j-a)=160°C/W

Mounting on a PCB of 50 mm

x 50 mm x 1.6 mm, 40% or

more of which is occupied by

copper

TB6674PG/FG/FAG

TA7774PG

FG/FAG

TB6674PG/FAG

TB6674FG

TB6674PG/FG/FAG

2010-08-25

by short-circuiting between outputs, air contamination faults, or faults due to improper grounding, or by

short-circuiting between contiguous terminals.

Note 4: By our short-circuited examination of neighboring terminals, when 9 and 10 terminals or 15 and 16 terminals

are short-circuited, the TB6674PG, TB6674FG, and TB6674FAG in any case might to be destroyed and

cause the trouble of smoking etc. Please use an appropriate fuse to the power supply line.

Note 5: Connect VS1A terminal and VS1B terminal externally.

Note 6: Connect each GND terminal externally.

TB6674PG/FG/FAG

2010-08-25

Package Dimensions

Unit: mm

Weight: 1.11 g (Typ.)

TB6674PG/FG/FAG

2010-08-25

Package Dimensions

Unit: mm

Weight: 0.50 g (Typ.)

TB6674PG/FG/FAG

2010-08-25

Package Dimensions

質量

Unit: mm

Weight: 0.14 g (Typ.)

TB6674PG/FG/FAG

2010-08-25

Notes on Contents

1. Block Diagrams

Some of the functional blocks, circuits, or constants in the block diagram may be omitted or simplified

for explanatory purposes.

2. Equivalent Circuits

The equivalent circuit diagrams may be simplified or some parts of them may be omitted for

explanatory purposes.

3. Timing Charts

Timing charts may be simplified for explanatory purposes.

4. Application Circuits

The application circuits shown in this document are provided for reference purposes only. Thorough

evaluation is required, especially at the mass production design stage.

Toshiba does not grant any license to any industrial property rights by providing these examples of

application circuits.

5. Test Circuits

Components in the test circuits are used only to obtain and confirm the device characteristics. These

components and circuits are not guaranteed to prevent malfunction or failure from occurring in the

application equipment.

IC Usage Considerations

Notes on handling of ICs

[1] The absolute maximum ratings of a semiconductor device are a set of ratings that must not be

exceeded, even for a moment. Do not exceed any of these ratings.

Exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result

injury by explosion or combustion.

[2] Use an appropriate power supply fuse to ensure that a large current does not continuously flow in

case of over current and/or IC failure. The IC will fully break down when used under conditions that

exceed its absolute maximum ratings, when the wiring is routed improperly or when an abnormal

pulse noise occurs from the wiring or load, causing a large current to continuously flow and the

breakdown can lead smoke or ignition. To minimize the effects of the flow of a large current in case

of breakdown, appropriate settings, such as fuse capacity, fusing time and insertion circuit location,

are required.

[3] If your design includes an inductive load such as a motor coil, incorporate a protection circuit into

the design to prevent device malfunction or breakdown caused by the current resulting from the

inrush current at power ON or the negative current resulting from the back electromotive force at

power OFF. IC breakdown may cause injury, smoke or ignition.

Use a stable power supply with ICs with built-in protection functions. If the power supply is

unstable, the protection function may not operate, causing IC breakdown. IC breakdown may cause

injury, smoke or ignition.

[4] Do not insert devices in the wrong orientation or incorrectly.

Make sure that the positive and negative terminals of power supplies are connected properly.

Otherwise, the current or power consumption may exceed the absolute maximum rating, and

exceeding the rating(s) may cause the device breakdown, damage or deterioration, and may result

injury by explosion or combustion.

In addition, do not use any device that is applied the current with inserting in the wrong orientation

or incorrectly even just one time.

TB6674PG/FG/FAG

2010-08-25

Points to remember on handling of ICs

(1) Heat Radiation Design

In using an IC with large current flow such as power amp, regulator or driver, please design the

device so that heat is appropriately radiated, not to exceed the specified junction temperature (Tj) at

any time and condition. These ICs generate heat even during normal use. An inadequate IC heat

radiation design can lead to decrease in IC life, deterioration of IC characteristics or IC breakdown.

In addition, please design the device taking into considerate the effect of IC heat radiation with

peripheral components.

(2) Back-EMF

When a motor rotates in the reverse direction, stops or slows down abruptly, a current flow back to

the motor’s power supply due to the effect of back-EMF. If the current sink capability of the power

supply is small, the device’s motor power supply and output terminals might be exposed to

conditions beyond absolute maximum ratings. To avoid this problem, take the effect of back-EMF

into consideration in system design.

TB6674PG/FG/FAG

2010-08-25

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