BAT720,215 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 1999 May 26 2003 Mar 25

DISCRETE SEMICONDUCTORS

BAT720

Schottky barrier diode

fpa

M3D08

2003 Mar 25 2

NXP Semiconductors Product data sheet

Schottky barrier diode BAT720

FEATURES

•Ultra high switching speed

•Low forward vo lta ge

•Guard ring protected

•Small plastic SMD package.

APPLICATIONS

•Ultra high-speed switching

•Voltage clamping

•Protection circuits.

DESCRIPTION

Planar Schottky barrier diode with an

integrated guard ring for stress

protection in a small SOT23 plastic

SMD package.

PINNING

PIN DESCRIPTION

1anode

2not connected

3cathode

Fig.1 Simplified outline (SOT23 ) and symbo l .

handbook, halfpage

MAM394

n.c.

Top view

MARKING

Note

1. ∗ = p : Made in Hong Kong.

∗ = t : Made in Malaysia.

∗ = W : Made in China.

TYPE NUMBER MARKING

CODE(1)

BAT720 L6*

LIMITING VALUES

In accordance with the A bsolute Maxi mum Rating Sys tem (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VRcontinuous revers e voltage −40 V

IFcontinuous forward current −500 mA

IFSM non-repetitive peak forward current tp < 10 ms −2 A

Tstg storage temperature −65 +150 °C

Tjjunction temperature −125 °C

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier diode BAT720

ELECTRICAL CHARACTERISTIC S

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTE RISTICS

Note

1. Refer to SOT23 standard mountin g conditions.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VFforward voltage IF = 500 mA; see Fig.2 −550 mV

IRreverse current VR = 35 V; see Fig.3 −100 μA

VR = 35 V; Tj = 100 °C; see Fig.3 −10 mA

Cddiode capacit an ce f = 1 MHz; VR = 0; see Fig.4 60 90 pF

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-a thermal resistance from junction to ambient note 1 500 K/W

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier diode BAT720

GRAPHICAL DATA

Fig.2 Forward current as a function of forward

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

VF (mV)

(mA)

150 250 350 450 550

103

102

10−1

MBK578

(1)

(2)

(3)

Fig.3 Reverse curren t as a function of reverse

voltage; typical values.

(1) Tamb = 125 °C.

(2) Tamb = 85 °C.

(3) Tamb = 25 °C.

handbook, halfpage

4030 VR (V)

(mA)

0 10 20

−1

−2

−3

MBK579

(1)

(2)

(3)

Fig.4 Diode capacitance as a function of reverse

voltage; typical values.

f = 1 MHz; Tj = 25 °C.

handbook, halfpage

4030 V

(V)

(pF)

01020

MBK577

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier diode BAT720

PACKAGE OUTLINE

UNIT A1

max. bpcDE e1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

97-02-28

99-09-13

IEC JEDEC EIAJ

mm 0.1 0.48

0.38 0.15

0.09 3.0

2.8 1.4

1.2 0.95

1.9 2.5

2.1 0.55

0.45 0.1

0.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT23 TO-236AB

detail X

vMA

0 1 2 mm

scale

1.1

0.9

Plastic surface mounted package; 3 leads SOT2

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NXP Semiconductors Pr oduct dat a shee t

Schottky barrier diode BAT720

DATA SHEET STATUS

Notes

1. Please consult the most recently issued docu ment before initiating or completing a des ign.

2. The prod uct status of device(s) described in this document may have changed since this document was publishe d

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the product specification.

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reserves the right to make changes to informa tion

published in this doc ument, including without limitation

specifications and product descriptions, at any time and

without notice. This document supersedes and replaces all

information supplied prior to the publication hereo f.

Suitability for use ⎯ NXP Semiconductors products are

not designed, au thorized or warran ted to be suitable for

use in medical, military, aircraft, space or life support

equipment, nor in applications where failure or malfunction

of an NXP Semiconductors product can reason ably be

expected to result in pe rs onal injury, death or severe

property or environmental damage. NXP Semiconductors

accepts no liability for inclusion and/or use of NXP

Semiconductors products in such equipment or

applications and therefor e s uc h inclusion and/or use is at

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Applications ⎯ Applications that are described herein for

any of these products are for illustrative purposes only.

NXP Semiconductors makes no representation or

warranty that such applications will be suitable for the

specified use witho ut fu rth e r testing or modificat ion .

Limiting values ⎯ Stress abov e on e or more limit ing

values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

the device. Limiting values a re s t ress ratings only and

operation of the device at these or an y other conditions

above those given in the Characteristics sections of this

document is not implied. Exposure to limiting values for

extended periods may affect device reliability.

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products are sold subject to the general terms and

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Quick refer ence data ⎯ The Quick reference data is an

extract of th e product data given in the Limiting values and

Characteristics sections of this document, and as such is

not complete, exhaus tive or legally binding.

NXP Semiconductors

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Customer notification

This data sheet was changed to reflect the new company name NXP Semicon ductors. No change s were

made to the content, except for the legal definitions and disclaimer s.

Printed in The Netherlands 613514/03/pp7 Date of release: 2003 Mar 25 Docum ent order numbe r: 9397 750 10964