BLF147 VHF power MOS transistor Rev. 06 -- 5 December 2006 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors NXP Semiconductors Product specification VHF power MOS transistor BLF147 FEATURES PINNING - SOT121B * High power gain PIN DESCRIPTION * Low intermodulation distortion 1 drain * Easy power control 2 source * Good thermal stability 3 gate * Withstands full load mismatch. 4 source APPLICATIONS * Industrial and military applications in the HF/VHF frequency range. handbook, halfpage 1 DESCRIPTION 4 Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the "General" section of the handbook for further information. d g 2 3 MAM267 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) D (%) d3 (dB) d5 (dB) SSB, class-AB 28 28 150 (PEP) >17 >35 <-30 <-30 CW, class-B 108 28 150 typ. 14 typ. 70 - - MODE OF OPERATION WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. Rev. 06 - 5 December 2006 2 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage - 65 V VGS gate-source voltage - 20 V ID drain current (DC) Ptot total power dissipation Tstg Tj - 25 A - 220 W storage temperature -65 150 C junction temperature - 200 C Tmb 25 C THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 0.8 K/W Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W MRA904 102 handbook, halfpage MGP049 300 handbook, halfpage Ptot ID (A) (W) (1) 200 (1) (2) (2) 10 100 1 1 10 VDS (V) (1) Current is this area may be limited by RDSon. (2) Tmb = 25 C. 102 0 0 50 100 Th (C) 150 (1) Short-time operation during mismatch. (2) Continuous operation. Fig.2 DC SOAR. Fig.3 Power derating curves. Rev. 06 - 5 December 2006 3 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage ID = 100 mA; VGS = 0 65 - - V IDSS drain-source leakage current VGS = 0; VDS = 28 V - - 5 mA IGSS gate-source leakage current VGS = 20 V; VDS = 0 - - 1 A VGSth gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 - 4.5 V VGS gate-source voltage difference of matched pairs ID = 100 mA; VDS = 10 V - - 100 mV gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 - S RDSon drain-source on-state resistance ID = 8 A; VGS = 10 V - 0.1 0.15 IDSX on-state drain current VGS = 10 V; VDS = 10 V - 37 - A Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 450 - pF Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 360 - pF Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz - 55 - pF VGS group indicator LIMITS (V) GROUP LIMITS (V) GROUP MIN. MAX. MIN. MAX. A 2.0 2.1 O 3.3 3.4 B 2.1 2.2 P 3.4 3.5 C D 2.2 2.3 Q 3.5 3.6 2.3 2.4 R 3.6 3.7 E 2.4 2.5 S 3.7 3.8 F 2.5 2.6 T 3.8 3.9 G 2.6 2.7 U 3.9 4.0 H 2.7 2.8 V 4.0 4.1 J 2.8 2.9 W 4.1 4.2 K 2.9 3.0 X 4.2 4.3 L 3.0 3.1 Y 4.3 4.4 M 3.1 3.2 Z 4.4 4.5 N 3.2 3.3 Rev. 06 - 5 December 2006 4 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 MGP050 0 MGP051 60 handbook, halfpage handbook, halfpage T.C. (mV/K) ID (A) -1 40 -2 -3 20 -4 -5 10-2 0 10-1 1 ID (A) 0 10 5 10 15 VGS (V) 20 VDS = 28 V; valid for Th = 25 to 70 C. VDS = 10 V. Fig.4 Temperature coefficient of gate-source voltage as a function of drain current; typical values. MGP052 170 Fig.5 Drain current as a function of gate-source voltage; typical values. MRA903 1400 handbook, halfpage handbook, halfpage C (pF) RDSon (m) 150 1200 130 800 110 400 Cis 0 90 0 50 100 Tj ( C) 0 150 ID = 8 A; VGS = 10 V. Fig.6 Cos 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Drain-source on-state resistance as a function of junction temperature; typical values. Fig.7 Rev. 06 - 5 December 2006 Input and output capacitance as functions of drain-source voltage; typical values. 5 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 MRA902 500 handbook, halfpage Crs (pF) 400 300 200 100 0 0 10 20 30 40 VDS (V) VGS = 0; f = 1 MHz. Fig.8 Feedback capacitance as a function of drain-source voltage; typical values. APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz; unless otherwise specified. PL (W) 20 to 150 (PEP) f (MHz) VDS (V) IDQ (A) Gp (dB) D (%) d3 (dB) (note 2) d5 (dB) (note 2) 28 28 1 >17 typ. 19 >35 typ. 40 <-30 typ. -34 <-30 typ. -40 Notes 1. Optimum load impedance: 2.1 + j0 . 2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 28 V; f = 28 MHz at rated load power. Rev. 06 - 5 December 2006 6 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 MGP053 30 MGP054 60 handbook, halfpage handbook, halfpage D (%) Gp (dB) 40 20 20 0 10 100 0 PL (W) PEP 0 200 100 PL (W) PEP 200 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.9 Fig.10 Efficiency as a function of load power; typical values. Power gain as a function of load power; typical values. MGP055 -20 MGP056 -20 handbook, halfpage handbook, halfpage d3 (dB) d5 (dB) -30 -30 -40 -40 -50 -50 -60 -60 0 100 PL (W) PEP 200 0 100 PL (W) PEP 200 Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz. Fig.11 Third order intermodulation distortion as a function of load power; typical values. Fig.12 Fifth order intermodulation distortion as a function of load power; typical values. Rev. 06 - 5 December 2006 7 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 handbook, full pagewidth C8 C1 D.U.T. C2 C10 L7 C9 C3 C12 C14 L2 L1 input 50 L3 R1 R2 C11 L4 C15 C13 C4 C5 output 50 R5 C6 R3 R4 L5 +VG L6 C7 +VD MGP057 f = 28 MHz. Fig.13 Test circuit for class-AB operation. Rev. 06 - 5 December 2006 8 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 List of components (see Fig 13). COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO. C1, C3, C13, C14 film dielectric trimmer 7 to 100 pF C2, C8, C9 multilayer ceramic chip capacitor; note 1 75 pF 2222 809 07015 C4, C5 multilayer ceramic chip capacitor 100 nF C6 multilayer ceramic chip capacitors in 3 x 100 nF parallel C7 electrolytic capacitor 2.2 F, 63 V C10 multilayer ceramic chip capacitor; note 1 100 pF C11, C12 multilayer ceramic chip capacitor; note 1 150 pF C15 multilayer ceramic chip capacitor; note 1 240 pF L1 6 turns enamelled 0.7 mm copper wire 145 nH length 5 mm; int. dia. 6 mm; leads 2 x 5 mm L2, L3 stripline; note 2 41.1 length 13 x 6 mm L4 4 turns enamelled 1.5 mm copper wire 148 nH length 8 mm; int. dia. 10 mm; leads 2 x 5 mm L5, L6 grade 3B Ferroxcube wideband HF choke L7 3 turns enamelled 2.2 mm copper wire 79 nH R1, R2 1 W metal film resistor 19.6 2322 153 51969 R3 0.4 W metal film resistor 10 k 2322 151 71003 R4 0.4 W metal film resistor 1 M 2322 151 71005 R5 1 W metal film resistor 10 2322 153 51009 2222 852 47104 2222 852 47104 4312 020 36642 length 8 mm; int. dia. 8 mm; leads 2 x 5 mm Notes 1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm. Rev. 06 - 5 December 2006 9 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 MGP058 30 handbook, halfpage MGP059 10 handbook, halfpage GP (dB) Zi () 20 5 ri 10 0 xi -5 0 0 10 20 30 f (MHz) 0 10 20 30 f (MHz) Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 . Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 . Fig.14 Power gain as a function of frequency; typical values. Fig.15 Input impedance as a function of frequency (series components); typical values. MGP061 4 MGP062 3 handbook, halfpage handbook, halfpage Zi () ZL () 2 2 ri RL 0 1 xi -2 -4 XL 0 0 50 100 150 f (MHz) 200 -1 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W. Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W. Fig.16 Input impedance as a function of frequency (series components); typical values. Fig.17 Load impedance as a function of frequency (series components); typical values. Rev. 06 - 5 December 2006 10 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 MGP060 30 handbook, halfpage Gp (dB) 20 10 0 0 50 100 150 f (MHz) 200 Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W. Fig.18 Power gain as a function of frequency; typical values. Rev. 06 - 5 December 2006 11 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 BLF147 scattering parameters VDS = 28 V; ID = 1000 mA; note 1 s11 f (MHz) s21 s12 s22 |s11| |s21| |s12| |s22| 5 0.91 -170.00 23.90 93.40 0.01 5.80 0.88 -171.20 10 0.91 -174.60 12.25 89.40 0.01 3.60 0.89 -177.20 20 0.92 -177.40 5.94 81.00 0.01 5.40 0.83 -179.60 30 0.92 -178.40 3.87 79.10 0.01 8.90 0.86 -178.90 40 0.92 -178.80 2.84 75.70 0.01 12.00 0.85 -178.60 50 0.92 -178.80 2.26 73.30 0.01 16.90 0.87 -176.90 60 0.92 -179.00 1.88 69.80 0.01 20.30 0.90 -177.30 70 0.93 -179.20 1.58 66.20 0.01 24.00 0.90 -178.10 80 0.93 -179.60 1.36 63.20 0.01 28.80 0.90 -178.40 90 0.93 -179.70 1.19 60.40 0.01 34.20 0.90 -178.60 100 0.94 -179.70 1.05 57.00 0.01 39.30 0.90 -179.40 125 0.95 179.50 0.77 49.30 0.01 52.30 0.88 179.20 150 0.95 179.00 0.60 45.80 0.01 64.90 0.91 -179.50 175 0.96 178.10 0.49 41.50 0.02 72.40 0.95 179.80 200 0.96 177.50 0.40 36.80 0.02 75.80 0.94 177.70 250 0.97 175.80 0.28 33.20 0.03 82.30 0.95 176.20 300 0.98 174.20 0.22 30.10 0.03 83.00 0.96 173.60 350 0.98 172.70 0.17 31.00 0.04 85.00 0.97 171.90 400 0.98 171.10 0.14 32.40 0.05 84.90 0.97 169.50 450 0.98 169.50 0.12 36.10 0.05 85.90 0.97 167.70 500 0.98 167.90 0.11 39.90 0.06 84.30 0.98 165.50 600 0.98 164.80 0.10 50.20 0.07 83.20 0.97 161.50 700 0.98 161.60 0.10 57.90 0.09 81.70 0.97 157.50 800 0.98 158.20 0.11 63.70 0.10 81.00 0.97 153.50 900 0.97 154.60 0.13 67.20 0.12 79.50 0.97 149.30 1000 0.97 151.10 0.14 70.20 0.14 78.80 0.96 144.90 Note 1. For more extensive S-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast. Rev. 06 - 5 December 2006 12 of 15 NXP Semiconductors Product specification VHF power MOS transistor BLF147 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads SOT121B D A F D1 q C B U1 c H b 4 w2 M C M 3 A U3 U2 p w1 M A M B M 1 2 H Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 7.27 6.17 5.82 5.56 0.16 0.10 inches 0.286 0.243 0.229 0.006 0.219 0.004 OUTLINE VERSION F H p Q q U1 U2 U3 w1 w2 2.67 2.41 28.45 25.52 3.30 3.05 4.45 3.91 18.42 24.90 24.63 6.48 6.22 12.32 12.06 0.25 0.51 0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005 0.130 0.120 0.175 0.725 0.154 0.98 0.97 0.255 0.245 0.485 0.475 0.01 0.02 D D1 12.86 12.83 12.59 12.57 45 REFERENCES IEC JEDEC EIAJ SOT121B EUROPEAN PROJECTION ISSUE DATE 99-03-29 Rev. 06 - 5 December 2006 13 of 15 BLF147 NXP Semiconductors VHF power MOS transistor Legal information Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. Definitions Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. 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Contact information For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com Rev. 06 - 5 December 2006 14 of 15 BLF147 NXP Semiconductors VHF power MOS transistor Revision history Revision history Document ID Release date Data sheet status Change notice Supersedes BLF147_6 20061205 Product data sheet - BLF147_5 Modifications: * Correction made to page 9 "List of components" BLF147_5 20061108 Product data sheet - BLF147_4 BLF147_4 (9397 750 11593) 20030901 Product specification - BLF147_3 BLF147_3 (9397 750 08411) 20010523 Product specification - BLF147_CNV_2 BLF147_CNV_2 (9397 750 xxxxx) 19971215 Product specification - - Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 December 2006 Document identifier: BLF147_6 Rev. 06 - 5 December 2006 15 of 15