©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3,
HGT1S12N60B3S
27A, 600V, UFS Series N-Channel IGBTs
This family of MOS gated high voltage switching devices
combine the best features of MOSFETs and bipolar
transist ors. These devices have the high input impedance o f
a M OS FET and t he low on-state conduction loss of a bi polar
transistor. The much lower on-state voltage drop varies only
mode rately between 25oC and 150oC.
The IGBT is i deal for many high voltage switchi ng
appli cati ons operating at mode rate freq uencies where low
conducti on losses are essenti al, such as: AC and DC motor
controls, power supplies and drivers f or solenoids, relays
and contactors.
Formerly developme ntal type TA49 171.
Symbol
Features
• 27A, 600V, TC = 25oC
• 600V Switching SOA Capability
• Typic al F all Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC
• Shor t Circuit Rating
• Low Co n du ction Los s
Packaging
JEDEC TO-220AB (ALTE RNATE VERSION)
JEDEC TO-2 63AB
JEDEC STYLE TO-247
Ordering Information
PART NUMBER PACKAGE BRAND
HGTP12N60B3 TO-220AB G12N60B3
HGTG12N60B3 TO-247 G12N60B3
HGT1S12N60B3S TO-263AB G12N60B3
NO TE: Whe n ord er ing, us e the ent ire part n umber. A dd the suff ix 9A
to obtain the TO-263AB variant in tape and reel, i.e.
HGT1S12N60B3S9A.
C
E
G
C
E
G
COLLECTOR
(FLANGE)
G COLLECTOR
(FLANGE)
E
COLLECTOR
(BOTTOM SIDE METAL)
C
E
G
FAIRCHILD CORPORATION IGBT P R ODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713
4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027
Data S heet April 2002
©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
Absolute Maxim um Ratings TC = 25oC, Unless Otherwise Specified HGTG12N60B3, HGTP12N60B3,
HGT1S12N60B3S UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 27 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 12 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 110 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 96A at 600V
Maximum Pow er Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD104 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83 W/oC
Rev erse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 15 0 oC
Maximum Temp erature fo r S old ering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body f or 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg 300
260
oC
oC
Short Circuit Withstand Time (Not e 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 5µs
Short Circuit Withstand Time (Not e 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 10 µs
CAUT ION: St ress es above those list ed in “Abs olute Maximum Rati ngs” may cause per mane nt d amage to the device. This i s a str ess only rating and operation of the
device at these or any other c onditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Speci fications TC = 25oC, Unless O therw ise Spec ified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V
Collector to Emitter Leakage Current ICES VCE = 600V TC = 25oC--250µA
TC = 150oC--2.0mA
Collector to Emitter Saturation Voltage VCE(SAT) IC = 12A
VGE = 15V TC = 25oC-1.62.1V
TC = 150oC-1.72.5V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, VCE = VGE 4.5 4.9 6.0 V
Ga te t o Emitter Le ak ag e C urr e nt IGES VGE = ±20V - - ±250 nA
Swit ching SOA SSOA TJ = 15 0 oC, RG = 25Ω, VGE = 15V
L = 100µH, VCE = 600V 96 - - A
Gate to Emitter Plateau Voltage VGEP IC = 12A, VCE = 0.5 BVCES -7.3 - V
On-State Gate Charge Qg(ON) IC = 12A
VCE = 300V VGE = 15V - 51 60 nC
VGE = 20V - 68 78 nC
Curren t Turn-On Delay Time td(ON)I IG BT an d D io de at TJ = 25oC
ICE = 12A
VCE = 480V
VGE = 15V
RG = 25 Ω
L = 1mH
Test Circuit (Figure 17)
-26- ns
Curre nt Rise T ime trI -23- ns
Curren t Turn-Off Delay Time td(OFF)I -150 - ns
Cu rre nt Fal l Tim e tfI -62- ns
Turn-On Energy (Note 4) EON1 -150 - µJ
Turn-On Energy (Note 4) EON2 - 304 350 µJ
Turn-Off Energy (Note 3) EOFF - 250 350 µJ
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
Curren t Turn-On Delay Time td(ON)I IG BT an d D io de at TJ = 150oC
ICE = 12A
VCE = 480V
VGE = 15V
RG = 25 Ω
L = 1mH
Test Circuit (Figure 17)
-22- ns
Curre nt Rise T ime trI -23- ns
Curren t Turn-Off Delay Time td(OFF)I - 280 295 ns
Cu rre nt Fal l Tim e tfI - 112 175 ns
Turn-On Energy (Note 4) EON1 -165 - µJ
Turn-On Energy (Note 4) EON2 - 500 525 µJ
Turn-Off Energy (Note 3) EOFF - 660 800 µJ
Thermal Resistance Junction To Case RθJC --1.2
oC/W
NOTES:
3. Turn-Off Energy Loss (EOFF) is define d as the int egr al o f the insta ntaneo us power loss start ing at th e trail ing ed ge of the i nput pul se and en ding
at the point where the collector current equals zero (ICE = 0A ). A ll d ev ic es we r e tes t ed per J E DEC S t anda r d No . 2 4-1 Met h od fo r Meas ur eme nt
of Power Device Turn-Off Switc hing Loss. This test method produces the true total Turn-Off Energy Loss.
4. Values for two Turn-On lo ss condi tions are shown for th e convenience of the circuit de signer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typi cal diode is used in the test c ircuit and the diode is at the sa me TJ as the IGBT. The diode type is specified in
Figure 17.
Typical Performance Curves Unless Otherwise Specified
FIGURE 1. DC COLLECT OR CURRENT vs CASE
TEMPERATURE FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
Electrical Speci fications TC = 25oC, Unless O therw ise Spec ified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
T
C
, CASE TEMPE RATURE (
o
C)
I
CE
, DC CO L LECT OR CURRENT (A)
50
5
0
20
10
15
25
30 V
GE
= 15V
25 75 100 125 150
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
50
700
30
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
10
20
300 400200100 500 600
40
0
60
70
80
90
100
T
J
= 150
o
C, R
G
= 25
Ω
, V
GE
= 15V, L = 100
µ
H
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
FIGURE 3. OPERATING FREQUENCY vs COLLECT OR T O
EMITTER CURRENT FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
FIGURE 5. COLLECTOR T O EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTO R TO EMITTER ON-STATE VOLTAGE
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS v s COLLECT OR T O
EMITTER CURRENT
Typical Performance Curves Unless Otherwise Specified (Continued)
T
C
V
GE
110
o
C10V
15V
15V
75
o
C
110
o
C
f
MAX
, OPERATING FREQUENCY (kHz)
2
I
CE
, COLLECTOR T O EMITTER CURRENT (A)
10
3
1
100
30
T
J
= 150
o
C, R
G
= 25
Ω
, L = 1mH, V
CE
= 480V
10 20
300
75
o
C10V
f
MAX1
= 0.05 / (t
d(OFF)I
+ t
d(ON)I
)
R
ØJC
= 1.2
o
C/W, SEE NOTES
P
C
= CONDUCTION DISSIPATION
(DUT Y FACT O R = 50%)
f
MAX2
= (P
D
- P
C
) / (E
ON2
+ E
OFF
)
V
GE
, G ATE TO EMITTER VO LTAGE ( V)
I
SC
, PEAK SHORT CIRCUIT CURRENT (A)
t
SC
, SHORT CIRCUIT WITHSTAND TIME (
µ
s)
10 11 12 13 14 15
2
4
6
8
12
16
10
30
40
50
60
70
80
100
t
SC
I
SC
V
CE
= 36 0V, R
G
= 25
Ω
, T
J
= 125
o
C
14 90
024
V
CE
, COL LEC TOR T O EMITTE R VOLTA GE (V )
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
0
10
20
30
6810
60
50
40
T
C
= -55
o
C
T
C
= 150
o
C
PULSE DURATION = 250
µ
s
DUTY CYCLE <0.5%, V
GE
= 10 V
T
C
= 25
o
C
70
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
V
CE
, COLLECTOR T O EMITTER VOLTA GE (V)
100
120
140
160
180
024
0
40
80
6810
60
20
DUTY CYCLE <0.5%, V
GE
= 15V
PULSE DURATION = 250
µ
s
T
C
= 150
o
C
T
C
= -55
o
C
T
C
= 25
o
C
E
ON
, TURN-ON ENERGY LOSS (mJ)
2.5
1.5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
2.0
1.0
0.5
2010
R
G
= 25
Ω
, L = 1mH, V
CE
= 480V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 150
o
C, V
GE
= 15V
3025155
3.0
0
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
OFF
, TURN-OFF ENERGY LOSS (mJ)
0
0.5
251510 20 305
1.0
2.5 R
G
= 25
Ω
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C; V
GE
= 10V OR 15V
T
J
= 25
o
C; V
GE
= 10V OR 15V
2.0
1.5
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT FIGURE 10. TURN-ON RI SE TIME vs COLLECT OR T O
EMITTER CURRENT
FIGURE 11 . TURN-OFF DELAY TI ME vs COLLECT OR T O
EMITTER CURRENT FIGURE 12 . FALL TIME vs COLLECT OR T O EMITTER
CURRENT
FIGURE 13. TRANSFER CHARACTE RISTIC FIGURE 14. GATE CHARGE WAVEFORM
Typical Performance Curves Unless Otherwise Specified (Continued)
ICE, COLLECTOR TO EMITTER CURRENT (A)
tdI, TURN-ON DELAY TIME (ns)
20 1510 20 305
25
30
35
40
45
50
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150 oC, VGE = 10V
TJ = 25oC, TJ = 150oC, VGE = 15V
25
55
ICE, COLLECTOR TO EMITTER CURRENT (A)
trI, RI SE TIM E (ns )
10
25
0
50
75
125
100
305
150
252015
RG = 25Ω, L = 1mH, VCE = 480V
TJ = 25oC and TJ = 150oC, VGE = 15V
TJ = 25oC, TJ = 150oC, VGE = 10V
10 15 305
125
250
300
2520
100
200
150
175
225
275
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d(OFF)I
, TURN-OFF DELAY TIME (ns)
R
G
= 25
Ω
, L = 1mH, V
CE
= 480V
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
I
CE
, COLLECTOR T O EMITTER CURRENT (A)
t
fI
, FALL TIME (ns)
10 15 305
60
80
100
120
140
2520
70
90
110
130
T
J
= 150
o
C, V
GE
= 10V, V
GE
= 15V
R
G
= 25
Ω
, L = 1 m H , V
CE
= 480V
T
J
= 25
o
C, V
GE
= 10V OR 15V
I
CE
, COLLECTOR T O EMITTER CURRENT (A)
0
20
40
60
80
100
5789106
V
GE
, GATE TO EMITTER VOLTAGE (V)
T
C
= 150
o
C
PULSE DURATION = 250
µ
s
11 12 13 14 15
120
T
C
= -55
o
C
140
160
180
4
DUTY CYCLE <0.5%, V
CE
= 10V
T
C
= 25
o
C
Q
g
, GATE CHARGE (nC)
20
0
12
15
9
6
3
010515 30
V
GE
, GAT E TO EMITTER VO LTAGE (V)
I
g (R EF)
= 1mA, R
L
= 25
Ω
, T
C
= 25
o
C
V
CE
= 200V
V
CE
= 400V
V
CE
= 600V
35 40 45 5025
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
FIGURE 16 . NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUI T FIGURE 18. S WITCHING TEST WAVEFORMS
Typical Performance Curves Unless Otherwise Specified (Continued)
V
CE
, COLL ECTO R T O EM ITTER VOLTAGE (V)
0 5 10 15 20 25
0
C, CAPACITANCE (nF)
0.50
1.00
1.50
2.00
2.50
C
IES
C
OES
C
RES
FREQ UE NCY = 1MHz
t
1
, RECTANGULAR PULSE DURATI ON (s)
10
-5
10
-3
10
0
10
1
10
-4
10
-1
10
-2
10
0
Z
θ
JC
, NORMA LIZE D THE RMA L RESPONS E
10
-1
10
-2
DUTY FACTOR, D = t
1
/ t
2
PE AK T
J
= P
D
x Z
θ
JC
x R
θ
JC
+ T
C
t
1
t
2
P
D
SINGLE PULSE
0.5
0.2
0.1
0.05
0.02
0.01
RG = 25Ω
L = 1mH
VDD = 480V
+
-
HGTP12N60B3D
tfI
td(OFF)I trI
td(ON)I
10%
90%
10%
90%
VCE
ICE
VGE
EOFF
EON2
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
©2002 Fairchild Semiconductor Corporation HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S Rev. C
HGTG12N60B3, HGTP12N60B3, HGT1S12N60B3S
Handling Precautions for IGBTs
Insulated Gate Bipolar Tr ansistors are susceptible to
gate-insul ation dama ge by the el ectrostatic di scharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge
built i n the handler’s body capacitance is not discharged
through the device. With pro per handling and applica ti on
procedures, however, IGBTs are currently being extensively
used in pr oduction by numerous equipment manuf acturers in
mili tary, industrial and consumer applications , wi th vi rtual ly
no dam age problems due to electrostatic discharge. IGBTs
can be handled safely if the follo w ing basic pr ecautions are
taken:
1. Prior to assem bly into a circuit , all leads should be ke pt
shorted together either by the use of metal shorting
springs or by the insertion into conducti ve material such
as “ECCOSORBD™ LD26” or equivalent.
2. When de vices are rem ov ed b y hand from thei r carriers ,
the ha nd bei ng used sho ul d be groun ded b y any sui tabl e
mean s - for example, with a metall ic wri stband.
3. Tips of soldering irons should be grounded.
4. Devi ces should ne v er be i nsert ed into or remov ed from
circuits with power on.
5. Gate Voltage Ratin g - Never ex ceed the ga te-v ol tage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate regi on.
6. Ga te Ter m in a tion - The gates o f these devices ar e
essentiall y capacitors . Circuits that lea ve the gate
open-circui ted or floa ti ng should be avoided . These
conditions can result in turn-on of the device due to
volt age buildup on the input capacitor due to leakage
currents or pi cku p.
7. Gate Prot ection - These d evices do not hav e an int ernal
mono li thic Zener di ode from gate to emitter. If gate
prot ection is required an e xte rnal Zener is re commended.
Operating Frequency Information
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimati ng device
performance for a specific appl ication. Other typical
frequency vs collector current (ICE) plots are possible using
the i nf ormation sh own for a t ypical unit in Fig ures 5, 6, 7, 8, 9
and 11. The operati ng frequency plot (Fig ure 3) of a typical
device show s fMAX1 or fMAX2; wh ic hever is sma lle r a t eac h
point. The information is based on measurements of a
typi cal device and is bounded b y the maximum r ated
junction te mpe rature.
fMAX1 is defi ned by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadti me ( the denomi nator ) ha s been arb itr arily hel d t o 10%
of the on- state ti me for a 50% duty fac tor. Oth er definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Devi ce turn-off delay can establish an additional frequency
li miting condi tion for an appli cation othe r than TJM. td(OFF)I
is importan t when controlling output ri pple under a lightly
loaded condition.
fMAX2 is defi ned by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowab le di ssipation (PD) i s define d by PD = (TJM - TC)/RθJC.
The sum of de vi ce s witchi ng an d condu ction losses mu st no t
exceed PD. A 50% duty factor was used (Figure 3) and the
conduction losses (PC) are approximated by
PC=(V
CE xI
CE)/2.
EON2 and EOFF are defined in the swi tching waveforms
shown in Fig ure 18. EON2 is t he integral of th e
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE xV
CE) during turn-off. All tail losses are inclu ded in the
calculati on for EOFF; i.e ., the collector curr ent equals zero
(ICE = 0).
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Formative or
In Design
First Production
Full Production
Not In Production
MICROWIRE
OPTOLOGIC
OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
I2C
ISOPLANAR
LittleFET
MicroFET
MicroPak
Rev. H5
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ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series
SILENT SWITCHER
SMART START
SPM
STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
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STAR*POWER is used under license
UHC
UltraFET
VCX
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