P6SMB300CA/51 - Vishay Presicion Group

P6SMB Series

Vishay Semiconductors

for merly General Semiconductor

Document Number 88370 www.vishay.com

18-Jul-02 1

Surface Mount TRANSZORB®

Transient Voltage Suppressors V(BR) Unidirectional

6.8 to 540V

V(BR) Bidirectional

6.8 to 220V

Peak Pulse Power 600W

0.180 (4.57)

0.160 (4.06) 0.012 (0.305)

0.006 (0.152)

0.008

(0.203)

Max.

0.220 (5.59)

0.205 (5.21)

0.060 (1.52)

0.030 (0.76)

0.155 (3.94)

0.130 (3.30)

0.086 (2.20)

0.077 (1.95)

0.096 (2.44)

0.084 (2.13)

Cathode Band

Dimensions in inches

and (millimeters)

DO-214AA

(SMB J-Bend)

Features

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• Low profile package with built-in strain relief for

surface mounted applications

• Glass passivated junction

• Low incremental surge resistance

• 600W peak pulse power capability with a 10/1000µs

wavefor m, repetition rate (duty cycle): 0.01%

• Excellent clamping capability

• Very fast response time

*Voltages above 220V available Q3-2002

Mechanical Data

Case: JEDEC DO-214AA (SMB) molded plastic over

passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

Method 2026. High temperature soldering guaranteed:

250°C/10 seconds at terminals.

Polarity: For uni-directional types the band denotes the

cathode, which is positive with respect to the anode

under normal TVS operation.

Standard Packaging: 12mm tape (EIA STD RS-481)

Weight: 0.003oz., 0.093g

Packaging Codes – Options (Antistatic):

51 – 2K per Bulk box, 20K/carton

52 – 750 per 7”plastic Reel (12mm tape), 15K/car ton

5B – 3.2K per 13”plastic Reel (12mm tape), 32K/carton

0.106 MAX

(2.69 MAX)

0.050 MIN

(1.27 MIN) 0.220 REF

0.083 MIN

(2.10 MIN)

Mounting Pad Layout

Devices for Bidirectional Applications

For bi-directional devices, use suffix CA (e.g. P6SMB10CA). Electrical characteristics apply in both directions.

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter Symbol Value Unit

Peak power dissipation with a 10/1000µs waveform(1)(2)(Fig. 1) PPPM Minimum 600 W

Peak pulse current with a 10/1000µs waveform(1) IPPM See Next Table A

Power dissipation on infinite heatsink, TA= 50°CP

M(AV) 5.0 W

Peak forward surge current 8.3ms single half sine-wave IFSM 100 A

uni-directional only(2)

Operating junction and storage temperature range TJ, TSTG –65 to +150 °C

Thermal resistance junction to ambient air(3) RθJA 100 °C/W

Thermal resistance junction to leads RθJL 20 °C/W

Operating junction and storage temperature range TJ, TSTG –65 to +150 °C

Notes: (1) Non-repetitive current pulse, per Fig.3 and derated above TA = 25°C per Fig. 2.

(2) Mounted on 0.2 x 0.2”(5.0 x 5.0mm) copper pads to each terminal

(3) Mounted on minimum recommended pad layout

Extended

Voltage Range*

P6SMB Series

Vishay Semiconductors

for merly General Semiconductor

www.vishay.com Document Number 88370

218-Jul-02

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.VF= 3.5V at IF= 50A (uni-directional only)

Breakdown Voltage Maximum Maximum Maximum Maximum

General Device Marking V(BR) at IT(1) Test Stand-off Reverse Peak Pulse Clamping Temp.

Semiconductor Code (V) Current Voltage Leakage Current Voltage at Coefficient

Part Number ITVWM at VWM IPPM(2) IPPM of V(BR)

UNI BI Min Max (mA) (V) ID(3) (µA) (A) VC(V) (%/°C)

P6SMB6.8A 6V8A 6V8C 6.45 7.14 10 5.80 1000 57.1 10.5 0.057

P6SMB7.5A 7V5A 7V5C 7.13 7.88 10 6.40 500 53.1 11.3 0.061

P6SMB8.2A 8V2A 8V2C 7.79 8.61 10 7.02 200 49.6 12.1 0.065

P6SMB9.1A 9V1A 9V1C 8.65 9.55 1.0 7.78 50 44.8 13.4 0.068

P6SMB10A 10A 10C 9.50 10.5 1.0 8.55 10 41.4 14.5 0.073

P6SMB11A 11A 11C 10.5 11.6 1.0 9.40 5.0 38.5 15.6 0.075

P6SMB12A 12A 12C 11.4 12.6 1.0 10.2 5.0 35.9 16.7 0.078

P6SMB13A 13A 13C 12.4 13.7 1.0 11.1 5.0 33.0 18.2 0.081

P6SMB15A 15A 15C 14.3 15.8 1.0 12.8 1.0 28.3 21.2 0.084

P6SMB16A 16A 16C 15.2 16.8 1.0 13.6 1.0 26.7 22.5 0.086

P6SMB18A 18A 18C 17.1 18.9 1.0 15.3 1.0 23.8 25.2 0.088

P6SMB20A 20A 20C 19.0 21.0 1.0 17.1 1.0 21.7 27.7 0.090

P6SMB22A 22A 22C 20.9 23.1 1.0 18.8 1.0 19.6 30.6 0.092

P6SMB24A 24A 24C 22.8 25.2 1.0 20.5 1.0 18.1 33.2 0.094

P6SMB27A 27A 27C 25.7 28.4 1.0 23.1 1.0 16.0 37.5 0.096

P6SMB30A 30A 30C 28.5 31.5 1.0 25.6 1.0 14.5 41.4 0.097

P6SMB33A 33A 33C 31.4 34.7 1.0 28.2 1.0 13.1 45.7 0.098

P6SMB36A 36A 36C 34.2 37.8 1.0 30.8 1.0 12.0 49.9 0.099

P6SMB39A 39A 39C 37.1 41.0 1.0 33.3 1.0 11.1 53.9 0.100

P6SMB43A 43A 43C 40.9 45.2 1.0 36.8 1.0 10.1 59.3 0.101

P6SMB47A 47A 47C 44.7 49.4 1.0 40.2 1.0 9.3 64.8 0.101

P6SMB51A 51A 51C 48.5 53.6 1.0 43.6 1.0 8.6 70.1 0.102

P6SMB56A 56A 56C 53.2 58.8 1.0 47.8 1.0 7.8 77.0 0.103

P6SMB62A 62A 62C 58.9 65.1 1.0 53.0 1.0 7.1 85.0 0.104

P6SMB68A 68A 68C 64.6 71.4 1.0 58.1 1.0 6.5 92.0 0.104

P6SMB75A 75A 75C 71.3 78.8 1.0 64.1 1.0 5.8 103 0.105

P6SMB82A 82A 82C 77.9 86.1 1.0 70.1 1.0 5.3 113 0.105

P6SMB91A 91A 91C 86.5 95.5 1.0 77.8 1.0 4.8 125 0.106

P6SMB100A 100A 100C 95.0 105 1.0 85.5 1.0 4.4 137 0.106

P6SMB110A 110A 110C 105 116 1.0 94.0 1.0 3.9 152 0.107

P6SMB120A 120A 120C 114 126 1.0 102 1.0 3.6 165 0.107

P6SMB130A 130A 130C 124 137 1.0 111 1.0 3.4 179 0.107

P6SMB150A 150A 150C 143 158 1.0 128 1.0 2.9 207 0.108

P6SMB160A 160A 160C 152 168 1.0 136 1.0 2.7 219 0.108

P6SMB170A 170A 170C 162 179 1.0 145 1.0 2.6 234 0.108

P6SMB180A 180A 180C 171 189 1.0 154 1.0 2.4 246 0.108

P6SMB200A 200A 200C 190 210 1.0 171 1.0 2.2 274 0.108

P6SMB220A 220A 220C 209 231 1.0 185 1.0 1.8 328 0.108

P6SMB250A 250A —237 263 1.0 214 1.0 1.74 344 0.110

P6SMB300A 300A —285 315 1.0 256 1.0 1.45 414 0.110

P6SMB350A 350A —333 368 1.0 300 1.0 1.24 482 0.110

P6SMB400A 400A —380 420 1.0 342 1.0 1.10 548 0.110

P6SMB440A 440A —418 462 1.0 376 1.0 1.00 602 0.110

P6SMB480A 480A —456 504 1.0 408 1.0 0.91 658 0.110

P6SMB510A 510A —485 535 1.0 434 1.0 0.86 698 0.110

P6SMB540A 540A —513 567 1.0 459 1.0 0.81 740 0.110

Notes: (1) Pulse test: tp ≤50ms

(2) Surge current waveform per Fig. 3 and derate per Fig. 2

(3) For bidirectional types with VWM of 10 volts and less, the IDlimit is doubled

(4) All terms and symbols are consistent with ANSI/IEEE C62.35

P6SMB Series

Vishay Semiconductors

for merly General Semiconductor

Document Number 88370 www.vishay.com

18-Jul-02 3

Ratings and

Characteristic Curves(TA= 25°C unless otherwise noted)

100

07525 50 100 125 150 175 200

Peak Pulse Power (PPP) or Current (IPP)

Derating in Percentage, %

TA — Ambient Temperature (°C)

Fig. 2 – Pulse Derating Curve

PPPM — Peak Pulse Power (kW)

Fig. 1 – P eak Pulse P o wer Rating Curve

0.1

100

0.1µs 1.0µs10µs

td — Pulse Width (sec.)

100µs 1.0ms 10ms

0.2 x 0.2" (0.5 x 0.5mm)

Copper Pad Areas

Fig. 6 – Maximum Non-Repetitive Peak

Forward Surge Current

Number of Cycles at 60HZ

200

100

110

100

8.3ms Single Half Sine-Wave

(JEDEC Method)

Unidirectional Only

IFSM — Peak Forward Surge Current (A)

tp — Pulse Duration (sec)

Transient Thermal Impedance (°C/W)

Fig. 5 – Typical Transient Thermal

Impedance

0.1

1.0

100

0.001 0.01 0.1 1 10 100 1000

100

150

IPPM — Peak Pulse Current, % IRSM

Fig. 3 – Pulse W avef orm

TJ = 25°C

Pulse Width (td)

is defined as the point

where the peak current

decays to 50% of IPPM

tr = 10µsec.

Peak Value

IPPM

Half Value — IPP

IPPM 2

10/1000µsec. Waveform

as defined by R.E.A.

01.0 2.0 3.0 4.0

t — Time (ms)

CJ — Junction Capacitance (pF)

Fig. 4 – Typical Junction Capacitance

100

1,000

6,000

101 100 200

VWM — Reverse Stand-Off Voltage (V)

TJ = 25°C

f = 1.0MHz

Vsig = 50mVp-p

VR, Measured at

Stand-Off

Voltage, VWM

Measured at

Zero Bias

Uni-Directional

Bi-Directional