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DATA SH EET

Product speciﬁcation

Supersedes data of September 1992 2001 May 23

DISCRETE SEMICONDUCTORS

BLF147

VHF power MOS transistor

2001 May 23 2

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

FEATURES

•High power gain

•Low intermodulation distortion

•Easy power control

•Good thermal stability

•Withstands full load mismatch.

DESCRIPTION

Silicon N-channel enhancement

mode vertical D-MOS transistor

designed for industrial and military

applicationsintheHF/VHFfrequency

range.

The transistor is encapsulated in a

4-lead,SOT121flangeenvelope,with

a ceramic cap. All leads are isolated

from the flange.

Amarkingcode,showinggate-source

voltage (VGS) information is provided

for matched pair applications. Refer

to 'General' section for further

information.

PINNING - SOT121

PIN DESCRIPTION

1 drain

2 source

3 gate

4 source

PIN CONFIGURATION

CAUTION

The device is supplied in an antistatic package. The gate-source input must

be protected against static charge during transport and handling.

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided

that the BeO disc is not damaged. All persons who handle, use or dispose of

this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to

the regulations applying at the location of the user. It must never be thrown

out with the general or domestic waste.

Fig.1 Simplified outline and symbol.

ok, halfpage

MLA876

MBB072

QUICK REFERENCE DATA

RF performance at Th = 25 °C in a common source test circuit.

MODE OF

OPERATION f

(MHz) VDS

(V) PL

(W) Gp

(dB) ηD

(%) d3

(dB) d5

(dB)

SSB, class-AB 28 28 150 (PEP) >17 >35 <−30 <−30

CW, class-B 108 28 150 typ. 14 typ. 70 −−

2001 May 23 3

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VDS drain-source voltage −65 V

±VGS gate-source voltage −20 V

IDDC drain current −25 A

Ptot total power dissipation up to Tmb = 25 °C−220 W

Tstg storage temperature −65 150 °C

Tjjunction temperature −200 °C

SYMBOL PARAMETER THERMAL RESISTANCE

Rth j-mb thermal resistance from junction to mounting base 0.8 K/W

Rth mb-h thermal resistance from mounting base to heatsink 0.2 K/W

Fig.2 DC SOAR.

(1) Current is this area may be limited by RDS(on).

(2) Tmb = 25 °C.

handbook, halfpage

102

110

DS (V)

(A)

102

(1)

MRA904

(2)

Fig.3 Power/temperature derating curves.

(1) Short-time operation during mismatch.

(2) Continuous operation.

handbook, halfpage

300

200

100

050 100 150

MGP049

Ptot

(W)

Th (°C)

(1)

(2)

2001 May 23 4

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)DSS drain-source breakdown voltage ID = 100 mA; VGS = 0 65 −−V

DSS drain-source leakage current VGS = 0; VDS = 28 V −−5mA

GSS gate-source leakage current ±VGS = 20 V; VDS = 0 −−1µA

GS(th) gate-source threshold voltage ID = 200 mA; VDS = 10 V 2 −4.5 V

∆VGS gate-source voltage difference of

matched pairs ID = 100 mA; VDS = 10 V −−100 mV

gfs forward transconductance ID = 8 A; VDS = 10 V 5 7.5 −S

RDS(on) drain-source on-state resistance ID = 8 A; VGS = 10 V −0.1 0.15 Ω

IDSX on-state drain current VGS = 10 V; VDS = 10 V −37 −A

Cis input capacitance VGS = 0; VDS = 28 V; f = 1 MHz −450 −pF

Cos output capacitance VGS = 0; VDS = 28 V; f = 1 MHz −360 −pF

Crs feedback capacitance VGS = 0; VDS = 28 V; f = 1 MHz −55 −pF

Fig.4 Temperature coefficient of gate-source

voltageasa functionofdraincurrent,typical

values.

VDS = 28 V; valid for Th = 25 to 70 °C.

handbook, halfpage

−5

MGP050

10−111010−2

−4

−3

−2

−1

T.C.

(mV/K)

ID (A)

Fig.5 Drain current as a function of gate-source

voltage, typical values.

VDS = 10 V.

handbook, halfpage

0510 2015

MGP051

VGS (V)

(A)

2001 May 23 5

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

Fig.6 Drain-source on-state resistance as a

function of junction temperature, typical

values.

ID= 8 A; VGS =10V.

handbook, halfpage

0 50 100 150

170

150

110

130

MGP052

RDS (on)

(mΩ)

Tj (°C)

Fig.7 Input and output capacitance as functions

of drain-source voltage, typical values.

VGS = 0; f = 1 MHz.

handbook, halfpage

400

800

1200

1400

01020 V

DS (V)

(pF)

Cis

Cos

30 40

MRA903

Fig.8 Feedback capacitance as a function of

drain-source voltage, typical values.

VGS = 0; f = 1 MHz.

handbook, halfpage

100

200

300

400

500

01020

(pF)

30 VDS (V) 40

MRA902

2001 May 23 6

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 9.8 Ω; unless otherwise speciﬁed.

RF performance in SSB operation in a common source class-AB circuit.

f1 = 28.000 MHz; f2 = 28.001 MHz.

Notes

1. Optimum load impedance: 2.1 + j0 Ω.

2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

(W) f

(MHz) VDS

(V) IDQ

(A) Gp

(dB) ηD

(%)

(dB)

(note 2)

(dB)

(note 2)

20 to 150 (PEP) 28 28 1 > 17

typ. 19 > 35

typ. 40 <−30

typ. −34 <−30

typ. −40

Ruggedness in class-AB operation

The BLF147 is capable of withstanding a load mismatch

correspondingtoVSWR= 50 through all phases under the

following conditions:

VDS = 28 V; f = 28 MHz at rated load power.

Fig.9 Gain as a function of load power, typical

values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

0 200

MGP053

100 PL (W) PEP

(dB)

Fig.10 Efficiency as a function of load power,

typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

0100 200

MGP054

ηD

(%)

PL (W) PEP

2001 May 23 7

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

Fig.11 Third order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω;f

1= 28.000 MHz; f2= 28.001 MHz.

handbook, halfpage

−20

−30

−40

−50

−60 100 200

MGP055

(dB)

PL (W) PEP

Fig.12 Fifth order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 9.8 Ω;f

1= 28.000 MHz; f2= 28.001 MHz.

handbook, halfpage

−20

−30

−40

−60

−50

100 200

MGP056

(dB)

PL (W) PEP

Fig.13 Test circuit for class-AB operation.

f = 28 MHz.

handbook, full pagewidth

MGP057

input

50 Ω

L1 L2 D.U.T. L3 L7

R2R1

R3R4

+VG

C13

C11

C10 C12

C15

+VD

C14

L6L5

R5 C6

output

50 Ω

2001 May 23 8

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

List of components (class-AB test circuit)

Notes

1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality.

2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (εr = 2.2),

thickness 1.6 mm.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C3, C13, C14 ﬁlm dielectric trimmer 7 to 100 pF 2222 809 07015

C2, C8, C9 multilayer ceramic chip capacitor

(note 1) 75 pF

C4, C5 multilayer ceramic chip capacitor 100 nF 2222 852 47104

C6 multilayer ceramic chip capacitors in

parallel 3×100 nF 2222 852 47104

C7 electrolytic capacitor 2.2 µF, 63 V

C10 multilayer ceramic chip capacitor

(note 1) 100 pF

C11, C12 multilayer ceramic chip capacitor

(note 1) 150 nF

C15 multilayer ceramic chip capacitor

(note 1) 240 pF

L1 6 turns enamelled 0.7 mm copper

wire 145 nH length 5 mm;

int. dia. 6 mm;

leads 2 ×5 mm

L2, L3 stripline (note 2) 41.1 Ωlength 13 ×6 mm

L4 4 turns enamelled 1.5 mm copper

wire 148 nH length 8 mm;

int. dia. 10 mm;

leads 2 ×5 mm

L5, L6 grade 3B Ferroxcube wideband HF

choke 4312 020 36642

L7 3 turns enamelled 2.2 mm copper

wire 79 nH length 8 mm;

int. dia. 8 mm;

leads 2 ×5 mm

R1, R2 1 W metal ﬁlm resistor 19.6 Ω2322 153 51969

R3 0.4 W metal ﬁlm resistor 10 kΩ2322 151 71003

R4 0.4 W metal ﬁlm resistor 1 MΩ2322 151 71005

R5 1 W metal ﬁlm resistor 10 Ω2322 153 51009

2001 May 23 9

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

Fig.14 Gain as a function of frequency, typical

values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.

handbook, halfpage

010 20 30

MGP058

(dB)

f (MHz)

Fig.15 Input impedance as a function of frequency

(series components), typical values.

Class-AB operation; VDS = 28 V; IDQ = 1 A;

RGS = 6.25 Ω; PL = 150 W (PEP); RL = 2.1 Ω.

handbook, halfpage

−510 20

MGP059

(Ω)

f (MHz)

Fig.16 Input impedance as a function of frequency

(series components), typical values.

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

RGS = 15 Ω; PL = 150 W.

handbook, halfpage

0 50 100 200

−2

−4

150

MGP061

(Ω)

f (MHz)

Fig.17 Load impedance as a function of frequency

(series components), typical values.

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

RGS = 15 Ω; PL = 150 W.

handbook, halfpage

0 50 100 200

−1

150

MGP062

(Ω)

f (MHz)

2001 May 23 10

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

Fig.18 Power gain as a function of frequency,

typical values.

Class-B operation; VDS = 28 V; IDQ = 0.2 A;

RGS = 15 Ω; PL = 150 W.

handbook, halfpage

050 100 200150

MGP060

f (MHz)

(dB)

2001 May 23 11

Philips Semiconductors Product speciﬁcation

VHF power MOS transistor BLF147

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT121B 99-03-29

0 5 10 mm

scale

Flanged ceramic package; 2 mounting holes; 4 leads SOT121B

MMM

0.25

UNIT A

5.82

5.56 0.16

0.10 12.86

12.59 12.83

12.57 28.45

25.52 3.30

3.05 6.48

6.22

7.27

6.17

cD1U3

12.32

12.06 0.51

w1w2

45°

αU1

24.90

24.63

4.45

3.91

18.42

2.67

2.41

0.01

inches 0.229

0.219 0.006

0.004 0.506

0.496 0.505

0.495 1.120

1.005 0.130

0.120 0.255

0.245

0.286

0.243 0.485

0.475 0.02

0.98

0.97

0.175

0.154 0.725

0.105

0.095

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

2001 72

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Printed in The Netherlands 613524/03/pp12 Date of release: 2001 May 23 Document order number: 9397 750 08411