Prelim. 5/98
LAB
SEME
2N2223A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
DU AL NPN TRANSIST OR
IN T O77 HERMETIC PA CKA GE
FEATURES
• Silicon Planar Epitaxial NPN Transistor
• High Rel and Screening Options Available.
VCEO Collector – Emitter Voltage
VCER Collector – Emitter Voltage
VCBO Collector – Base Voltage
VEBO Emitter – Base Voltage
ICCollector Current
TJ, Tstg Operating and Storage Junction Temperature Range
PDTotal Device Dissipation @ TA= 25°C
Derate above 25°C
PDTotal Device Dissipation @ TC= 25°C
Derate above 25°C
60V
80V
100V
7V
500mA
–65 to +200°C
Per Side Total Device
0.5W 0.6W
2.86mW/°C 3.43mW/°C
1.6W 3.0W
9.1mW/°C 11.4mW/°C
MECHANICAL DATA
Dimensions in mm (inches)
TO77 METAL PACKAGE
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
PIN 1 – Collector
PIN 2 – Base
PIN 3 – Emitter
PIN 4 – Emitter
PIN 5 – Base
PIN 6 – Collector
1.02
(0.040)
Max.
12.7 (0.5 0 0 )
Min. 6.10 (0.240)
6.60 (0.260)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100) 0.74 (0.029)
1.14 (0.045)
1
6
4
3
2
45˚ 0.71 (0.028)
0.86 (0.034)
0.41 (0.016)
0.53 (0.021)
5
IC= 100mA RBE
£
10
W
IC= 30mA IB= 0
IC= 100
m
AI
E= 0
IE= 100
m
AI
C= 0
VCB = 80V
IE= 0 TA= 150°C
VBE = 5V IC= 0
IC= 10
m
AV
CE = 5V
IC= 100
m
AV
CE = 5V
IC= 10mA VCE = 5V
IC= 50mA IB= 5mA
IC= 50mA IB= 5mA
IC= 50mA VCE = 10V
f = 20MHz
IE= 0 VCB = 10V
f = 1MHz
IC= 0 VBE = 0.5V
f = 1MHz
IC= 1mA VCB = 5V
f = 1kHz
IC= 1mA VCE = 5V
f = 1kHz
IC= 100
m
AV
CE = 5V
IC= 100
m
AV
CE = 5V
IC= 100
m
AV
CE = 5V
TA= –55 to +125°C
Prelim. 5/98
LAB
SEME
2N2223A
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
ELECTRICAL CHARACTERISTICS (TA= 25°C unless otherwise stated)
VCER(sus)* Collector – Emitter Breakdown Voltage
VCEO(sus)* Collector – Emitter Sustaining Voltage
V(BR)CBO Collector – Base Breakdown Voltage
V(BR)EBO Emitter – Base Breakdown Voltage
ICBO Collector Cut-off Current
IEBO Emitter Cut-off Current
hFE DC Current Gain
VCE(sat) Collector – Emitter Saturation Voltage
VBE(sat) Base – Emitter Saturation Voltage
fTCurrent Gain Bandwidth Product
Cob Output Capacitance
Cib Input Capacitance
hib Input Impedance
hfe Small Signal Current Gain
hoe Output Admittance
hFE1/hFE2 DC Current Gain Ratio 1
½
VBE1-VBE2
½
Base – Emitter Voltage Differential
D(
VBE1-VBE2) Base – Emitter Voltage Differential
D
T Change Due To Temperature
80
60
100
70.01
15
10
15
25 150
50 200
1.2
0.9
50
15
85
20 30
40 200
.05
0.9 1.0
5.0 25
V
V
V
V
m
A
nA
—
V
MHz
pF
pF
W
—
m
mhos
—
mV
m
V/°C
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL SIGNAL CHARACTERISTICS
MATCHING CHARACTERISTICS
* Pulse Test: tp
£
300
m
s,
d£
2%.
1) The lowest hFE reading is taken as hFE1 for this ratio.
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PRODUCT Polarity Package VCEO IC(cont) HFE(min) HFE(max) @ VCE/ICFTPD
2N2223A-JQR-B NPN TO77 80V 0.5A 50 200 5/10m 50MHz 0.6W
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