BC848W
NPN General Purpose Transistor
FEATURES
•
Ideally suited for automatic insertion
•
For Switching and AF Amplifier Applications
MECHANICAL DATA
•
Case: SOT-323 Plastic
•
Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
•
Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings
@ T
A
= 25℃
Characteristic Symbol
Value
Unit
Collector-Base Voltage V
CBO
30 V
Collector-Emitter Voltage V
CEO
30 V
Emitter-Base Voltage V
EBO
5 V
Collector Current -Continuous I
C
100 mA
Collector Power Dissipation P
C
150 mW
Junction Temperature T
J
150 ℃
Storage Temperature Range T
STG
-55~+150 ℃
Electrical Characteristics
@
T
A
= 25℃ unless otherwise specified
Characteristic Test Condition Symbol
Min. Typ. Max.
Unit
Collector-base breakdown voltage I
C
=10µA,I
E
=0 V
CBO
30 V
Collector-emitter breakdown voltage
I
C
=10mA,I
B
=0 V
CEO
30 V
Emitter-base breakdown voltage I
E
=1µA,I
C
=0 V
EBO
5 V
Collector-base cut-off current V
CB
=30V I
CBO
15 nA
V
CE
=5V,I
C
=10uA
AW
BW
CW
h
FE1
90
150
270
DC current gain
V
CE
=5V,I
C
=2mA
AW
BW
CW
h
FE2
110
200
420
220
450
800
Collector-emitter saturation voltage I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA V
CE
(sat)
0.25
0.6 V
Base-emitter saturation voltage I
C
=10mA,I
B
=0.5mA
I
C
=100mA,I
B
=5mA V
BE
(sat)
0.7
0.9 V
Base-emitter voltage I
C
=2mA,V
CE
=5V
I
C
=10mA,V
CE
=5V V
BE
580
660
700
770 mV
Transition frequency V
CE
=5V,I
C
=10mA,
f=100MHz f
T
100 MHz
Collector output capacitance V
CB
=10V,f=1MHz C
ob
4.5 pF
Noise figure
VCE=5V,Ic=0.2mA,
f=1KHz,RS=2KΩ
Bandwidth=200Hz
BW
CW
NF 10
4 dB
REV. 2, Jun-2012, KSNR09