NPN-Silizium-Fototransistor Silicon NPN Phototransistor Lead (Pb) Free Product - RoHS Compliant LPT 80 A Wesentliche Merkmale Features * Spektraler Bereich der Fotoempfindlichkeit: 450 nm ...1100 nm * Gehause: Sidelooker, Harz * Besonderheit des Bauteils: hohe Fotoempfindlichkeit * Gehausegleich: IRED IRL 80 A, IRL 81 A * Spectral Range of Sensitivity: 450 nm ...1100 nm * Package: Sidelooker, Epoxy * Feature of the device: high photosensitivity * Package Match: IR emitter IRL 80 A, IRL 81 A Anwendungen Applications * Fertigungs- und Kontrollanwendungen der Industrie * Lichtschranken * A variety of manufacturing and monitoring applications * Photointerrupters Typ Type Bestellnummer Ordering Code Fotostrom, Ee= 0.5mW/cm2, = 950nm, VCE = 5 V Photocurrent Ipce (mA) LPT 80 A Q68000A7852 0.25 2008-08-14 1 LPT 80 A Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Betriebs- und Lagertemperatur Operating and storage temperature range Top; Tstg - 40 ...+ 100 C Kollektor-Emitterspannung Collector-emitter voltage VCE 30 V Kollektorstrom Collector current IC 50 mA Kollektorspitzenstrom, = 10 s Collector surge current ICS 100 mA Emitter-Kollektorspannung Emitter-collector voltage VEC 7 V Verlustleistung, TA = 25 C Total power dissipation Ptot 100 mW Warmewiderstand Thermal resistance RthJA 750 K/W 2008-08-14 2 LPT 80 A Kennwerte (TA = 25 C, = 950 nm) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Wellenlange der max. Fotoempfindlichkeit Wavelength of max. sensitivity S max 880 nm Spektraler Bereich der Fotoempfindlichkeit S = 10% von Smax Spectral range of sensitivity S = 10% of Smax 450 ...1100 nm Bestrahlungsempfindliche Flache Radiant sensitive area A 0.11 0.11 Abmessung der Chipflache Dimensions of chip area Lx B Lx W 0.5 x 0.5 0.5 x 0.5 Halbwinkel Half angle 35 Grad deg. Kapaziat, VCE = 0 V, f = 1 MHz, E = 0 Capacitance CCE 7.5 pF Dunkelstrom, VCE = 20 V Dark current ICEO 1 (< 50) nA IPCE IPCE > 0.25 3.2 mA mA Anstiegs- und Abfallzeit Rise and fall time RL = 1 k, V = 5 V, = 950 nm, IC = 1 mA tr , tf 10 s Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage (threefold saturated) VCEsat 150 mV Fotostrom Photocurrent Ee= 0.5mW/cm2, = 950nm, VCE = 5 V, Ev = 1000 lx, Normlicht/standard light A, VCE = 5 V 2008-08-14 3 LPT 80 A Relative Spectral Sensitivity Srel = f () Total Power Dissipation Ptot = f (TA) 125 100 OHR01425 10 % F mA nA 90 S rel Dark Current ICE0 = f (VCE), E = 0 100 80 I CEO 70 1 60 75 50 40 50 0.1 30 20 25 10 0 400 500 600 700 800 900 nm 1100 1000 0.01 0 5 10 15 20 lambda Photocurrent IPCE/IPCE25 = f (TA), VCE = 5 V PCE 25 0 30 V 35 Dark Current ICE0 = f (TA), VCE = 5 V, E = 0 8 7 CCE 6 I CEO 100 1.0 5 4 10 0.8 3 0.6 1 2 0.4 0.1 1 0.2 0 -25 C 100 pF 1000 1.2 80 Capacitance nA 1.4 60 CCE = f (VCE), f = 1 MHz, E = 0 10000 PCE 25 40 TA OHF01524 1.6 20 0 V CE 0 1E-03 0.01 0 25 50 75 C 100 TA -25 0 25 50 75 TA C 100 1E-02 1E-01 1E+00 1E+01 VCE 1E+02 V Directional Characteristics Srel = f () 40 30 20 10 0 OHF00345 1.0 50 0.8 60 0.6 70 0.4 80 0.2 0 90 100 2008-08-14 1.0 0.8 4 0.6 0.4 0 20 40 60 80 100 120 LPT 80 A 1.52 (0.060) Plastic marking 2.08 (0.082) 0.46 (0.018) 0.64 (0.025) 0.46 (0.018) Collector 1.52 (0.060) 0.64 (0.025) 2.54 (0.100) spacing 1.52 (0.060) 5.84 (0.230) 5.59 (0.220) 1.29 (0.051) 1.14 (0.045) 2.34 (0.092) 16.51 (0.650) 16.00 (0.630) 4.57 (0.180) 4.32 (0.170) Mazeichnung Package Outlines 2.54 (0.100) 2.03 (0.080) 1.70 (0.067) 1.45 (0.057) R = 0.76 (0.030) Approx. weight 0.2 g GEOY6391 Mae in mm (inch) / Dimensions in mm (inch). 4.8 (0.189) Empfohlenes LotpaddesignWellenloten (TTW) Recommended Solder Pad TTW Soldering 4 (0.157) OHLPY985 Mae in mm (inch) / Dimensions in mm (inch). 2008-08-14 5 LPT 80 A Lotbedingungen Soldering Condition Wellenloten (TTW) TTW Soldering (nach CECC 00802) (acc. to CECC 00802 OHLY0598 300 C T 10 s 250 Normalkurve standard curve 235 C ... 260 C Grenzkurven limit curves 2. Welle 2. wave 200 1. Welle 1. wave 150 ca 200 K/s 2 K/s 5 K/s 100 C ... 130 C 100 2 K/s 50 Zwangskuhlung forced cooling 0 0 50 100 150 200 s 250 t Published by OSRAM Opto Semiconductors GmbH Wernerwerkstrasse 2, D-93049 Regensburg www.osram-os.com (c) All Rights Reserved. The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. Due to technical requirements components may contain dangerous substances. For information on the types in question please contact our Sales Organization. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS. 1 A critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2 Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain human life. If they fail, it is reasonable to assume that the health of the user may be endangered. 2008-08-14 6