G E SOLID STATE ~ ov de 3875081 oo17i2ze Y 9 z-27-2, High-Speed Power Transistors File Number 216 2N4036, 2N4037, 2N4314 Medium-Power Silicon P-N-P Planar Transistors General-Purpose Types for Industrial and TERMINAL DESIGNATIONS Commerical Applications 8 Features: = = Gain-bandwidth product (fr) = 60 MHz min. = High breakdown voltages E (CASE) s Planar construction provides low noise and iow leakage = Low saturation voltages eocs-27512 a High pulsed beta at high collector current JEDEC TO-205AD The 2N4036, 2N4037, and 2N4314 are doubled-diffused, epitaxial-planar, silicon p-n-p transistors; they differ in breakdown-voltage ratings, leakage-current, and saturation characteristics, They are supplied in the JEDEC TO-205AD hermetic package. These transistors are intended for a wide variety of small- signal medium-power applications. With a minimum gain- bandwidth product (fr) of 60 MHz, these devices provide useful gain at high frequencies. In addition, the 2N4036 is useful in high-speed saturated switching applications. MAXIMUM RATINGS, Absolute-Maximum Values: 2N4036 2N4037 2N4314 "VOB cece t eee c cece ence nena nee e tren e eset en ease ees en sane see rn ee teres -90 -60 -90 v Veev(sus) Var HE tUSV cc ccser cence cece tet eee cence enn ee rere tan cette eee neetad -85 -60 -85 Vv Veen(sus) Ree = 2000....... pee b cece eden etn betwee renee teen een e a eee ee eee 85 -60 -85 Vv *Vceo(sus) aes 65 -40 -65 Vv *Veso - wee 7 7 7 Vv *lasees see -1.0 -1.0 -1.0 A Wace ce reece neon een e eee e ene e ene ene E eee e EES EEE ETERS CREE TEETER EGS -0.5 05 -0.5 A *Pr Te S 25C 7 7 7 Ww _ 1 - Ww To, Ta > 25C SeeFig. 2 _____ C Pulsed . See Fig. 1. -_______ C Taig: Ta enc ec ene ne ne nee en ene ree eee eerste aE EA Eee TE ETT TEE TEES -65 to 200 C *TL (During soldering): At distance > 1/16 in. (1.58 mm) from seating plane for 10S Max... .cereeeersereeer errr ec ecc ees 230 C _ * In accordance with JEDEC registration data format (JS-6 RDF-1 2N4036; JS-9 RDF-2 2N4037, 2N4314). 115 iG E SOLID STATE 01 DEP ss7s08h Oo17113 6 ff + Z7-Z) High-Speed Power transistors 2N4036, 2N4037, 2N4314 ELECTRICAL CHARACTERISTICS, at Case Temperature (Te) = 25C unless otherwise specified TEST CONDITIONS LIMITS VOLTAGE CHARACTERISTIC Vde mA dc 2N4036 2N4037 2N4314 'cBo ie =0 tego V(BR)CBO =0 (BRIEBO Ig = -0.1mA CE Vv Ree < 200 2 Vee Vv hee Ihge! f = 20 MHz Cop ip =0,f = 1 MHz ; & uf ton Resc 25 Rosa 165 165 * "QN"-types in accordance with JEDEC registration data format (JS-6 RDF-1 2N4026; JS-9 RDF-2 2N4037, 2N4314). Vee Pulsed, pulse duration = 300 ps, duty factor < 2%. CAUTION: The sustaining voltages Vcgglsus). VceR tous, and Vegyisus) MUST NOT be measured on a curve tracer. They should be measured by the pulse method (Note a'}. co 116 0656 E-07G E SOLID STATE A Nn eT ACE Ol DE OC FORWARO-CURRENT TRANSFER RATIO ~Ot Fig. 3 - Typical de beta characteristics for ail types. COLLECTOR CURRENT {ig)-A CASE TEMPERATURE (Toh 25C (CURVES MUST BE DERATEO LINEARLY WITH INCREASE IN JEMPERATURE} NORMALIZED) Pow! MULTIPLIER toy vp 1g MAK. (CONTINUCUS) |_| i N CN Ap 70 s/-] | SA ILD |} 4 oN a5 0 % ,e 4 eo \ ay AF 0, z | 20] N 08 to] j___|_-_1 1. ceo max =4ov_ |__| (2N9037} . T Yeeo MAK = 65 4 ' 4 tT (24036 & 2NA314) # FOR SINGLE 2 NONREPETITIVE __] PULSE 008 | | | <I 4 8p z 00 COLLECTOR -TO-EMITTER VOLTAGE (Veg }- 9208-17443 Fig. 1 - Maximum operating areas for 2N4036, 2N4314. HEA i ie EE Sree 6 4 Bg oH ae HS Het os5F Ba od sre ms wo Fy ge be e Seer ki Ro ee a a 2N4037, and So 75.~100 25 SOE CASE TEMPERATURE (To) C rt EEE eee Lettre +" 92L$-1469Rt Fig. 2 - Dissipation derating curve for 2N4036, 2N4037, and 2N43174. -1 -10 COLLECTOR CURRENT {I) -l0o mA DC FORWARO-CURRENT TRANSFER RATIO (hee) -600 -oOl 92L$1765R2 COLLECTOR-TO-EMITTER VOLTAGE {vc_}* ~10V c ~-LO -10 100 CGOLLESTOR CURRENT (Ip }mA -i,00c 92L$~1292 0657 E-08 3875081 QOL?71L4 3 TZ | wer Transistors 2N4036, 2N4037, 2N4314 Fig. 4 - Typical de beta characteristics for 2N4037 and 2N4314, 17 a3875081 G E SOLID STATE G1 DE 3475082 Oo17125 0 ff 7-27-21 ; High-Speed Power Iransistors . 2N4036, 2N4037, 2N4314 AMBIENT TEMPERATURE (Ta } 25C COLLECTOR-TO-EMITTER VOLTAGE (Vcp)-V 921S-t29181 Fig. 5 - Typical large-signal output characteristics for 2N4037 and 2N4314. i AMBIENT TEMPERATURE (Ta }s55*C <4 -8 COLLECTOR-TO-EMITTER VOLTAGE (Vce}- 92L$-1262RL Fig. 7 - Typical output characteristics at Ta=- 85C for 2N4037 and 2N4314. AMBIENT TEMPERATURE (Ta } "25C UNLESS OTHERWISE SPECIFIED =I6. 18 BASE-TO-EMITTER VOLTAGE (Vge)-V P2LS 129582 Fig. 9 - Typical! transfer characteristics for 2N4037 and 2N4314. AMBIENT TEMPERATURE (Ty, ) 25C Fig. COLLECTOR-TO-EMITTER VOLTAGE (c)- 92LS-1287Rt 6 - Typical small-signal output characteristics for 2N4037 and 2N4314, "AMBIENT TEMPERATURE {Ta )* 150C < 4 & e z a & 2 3 6 & o & 3 a 3 3 COLLECTOR-TO-EMITTER VOLTAGE Wee) -v S2LS-12R9Ft Fig. 8 - Typical output characteristics at Ta=160 C Fig. for 2N4097 and 2N4314. COLLECTOR-TO-EMITTER VOLTAGE (VcE}=-10V FREQUENCY (f)=20 MHz AMBIENT TEMPERATURE (T,]=25C a 11 N 'SMALL~ SIGNAL FORWARD-CURRENT TRANSFER RATIO (hyq) > N x N 1 -10 100 1000 COLLECTOR CURRENT (Ic]- mA 9215 -1257R1 10 - Typical small-signal beta characteristic for all types. 118 0658 -093875081 GE SOLID STATE i DE 3475061 OOL?LIb 1 rmyn-epoou + ver Transistors 0659 COLLECTOR~TO-BASE VOLTAGE COLLECTOR CUTOFF CURRENT (iggghHA -100 -50 0 50 soo Isa 200 JUNCTION TEMPERATURE (tye g2ets-222h Fig. 11 - Typical collector cutoff current vs. junction temperature for 2N4036. Ig = 10 Ig, 10 Iga AMBIENT TEMPERATURE (Ta}=25C SWITCHING TIMEns Time ? 2 a6 2 4 e 8 -10 -100 -1,000 COLLECTOR CURRENT (I})-mA 92LS-1267RI Fig. 13 - Typical saturated switching times for type 2N4036. 1 a | _ \ -065 1 1 ! 1 1 1 bv. 1 L \ INPUT-PULSE 1 WAVE FORM i 90% 2N4036, 2N4037, 2N4314 CURRENT re 2 wo = o 10 2.0 -5,0 -6.0 COLLECTOR-TO-EMITTER SATURATION VOLTAGE, Vcg {808} -V 92t$~izearr Fig. 12 - Typical saturation-voltage characteristics for 2N4036. +Vap = 4V AOUUST Ig,*I po -30V OUTPUT TO OSCILLOSCOPE CHANNEL A 2106 Zs10a OUTPUT TO jy 20 9F OSCILLOSCOPE tee 15 08 CHANNEL 8 2108 N Cin" 20 pF ty 1Sa8 300M 1% TYPE INPUT FROM PULSE 1 2014036 GENERATOR PULSE WIOTH=20 us PULSE REP, FREQsIOKHz tr 1Gns OSCILLOSCOPE GROUND > 92ts-1262hi Fig. 14 - Circuit used to measure switching times for type 2N4036. -30vV OUTPUT-PULSE WAVE FORM 10% 1+ | ' t tou torr 92Ls-1264 Fig. 15 - Oscilloscope display for measurement of switching times. 119 E~10 20-2) oe