Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
●IC ................................................................ 1600A
●VCES ....................................................... 1700V
●Insulated Type
●1-element in a Pack
●AISiC Baseplate
●Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
CM1600HC-34H
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
C
G
E
CC
EE
C
E
C
E
CM
E
C
G
20
114
130
16.5
2.5
18.5
18
61.5
14.5
11
35
5
30
140
5
31.5
4 - M8 NUTS
3 - M4 NUTS
124
±0.25
57
±0.25
57
±0.25
6 - φ 7 MOUNTING HOLES
LABEL
CIRCUIT DIAGRAM
screwing depth
min. 7.7
screwing depth
min. 11.7
38
+1
0
28
+1
0
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MAXIMUM RATINGS
Collector-emitter voltage
Gate-emitter voltage
Maximum power dissipation
Junction temperature
Operating temperature
Storage temperature
Isolation voltage
Maximum short circuit pulse
width
VGE = 0V, Tj = 25°C
VCE = 0V, Tj = 25°C
TC = 80°C
Pulse (Note 1)
Pulse (Note 1)
TC = 25°C, IGBT part
RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1150V, VCES ≤ 1700V, VGE = 15V
Tj = 125°C
Collector current
Emitter current
1700
±20
1600
3200
1600
3200
12500
–40 ~ +150
–40 ~ +125
–40 ~ +125
4000
10
Symbol Item Conditions UnitRatings
V
V
A
A
A
A
W
°C
°C
°C
V
µs
VCES
VGES
IC
ICM
IE
(Note 2)
IEM
(Note 2)
PC
(Note 3)
Tj
Top
Tstg
Viso
tpsc
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
VCE = VCES, VGE = 0V, Tj = 25°C
VGE = VGES, VCE = 0V, Tj = 25°C
IC = 1600A, VGE = 15V, Tj = 25°C (Note 4)
IC = 1600A, VGE = 15V, Tj = 125°C (Note 4)
VCC = 850V, IC = 1600A, VGE = 15V, Tj = 25°C
IE = 1600A, VGE = 0V, Tj = 25°C (Note 4)
IE = 1600A, VGE = 0V, Tj = 125°C (Note 4)
VCC = 850V, IC = 1600A, VGE = ±15V
RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1600A, VGE = ±15V
RG(off) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
VCC = 850V, IC = 1600A, VGE = ±15V
RG(on) = 1.6Ω, Tj = 125°C, Ls = 100nH
Inductive load
V
V
Min Typ Max
24
0.5
3.30
—
—
—
—
—
3.00
—
1.60
1.30
—
2.70
0.80
—
2.70
—
—
mA
µA
nF
nF
nF
µC
V
µs
µs
mJ/pulse
µs
µs
mJ/pulse
µs
µC
mJ/pulse
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
ICES
IGES
Cies
Coes
Cres
Qg
VEC
(Note 2)
td(on)
tr
Eon
td(off)
tf
Eoff
trr
(Note 2)
Qrr
(Note 2)
Erec
(Note 2)
Symbol Item Conditions
VGE(th)
VCE(sat)
Limits Unit
4.5
Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C).
2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
3. Junction temperature (Tj) should not exceed Tjmax rating (150°C).
4. Pulse width and repetition rate should be such as to cause negligible temperature rise.
ELECTRICAL CHARACTERISTICS
Collector cut-off current
Gate-emitter
threshold voltage
Gate leakage current
Collector-emitter
saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Emitter-collector voltage
Turn-on delay time
Turn-on rise time
Turn-on switching energy
Turn-off delay time
Turn-off fall time
Turn-off switching energy
Reverse recovery time
Reverse recovery charge
Reverse recovery energy
IC = 160mA, VCE = 10V, Tj = 25°C
VCE = 10V, f = 100kHz
VGE = 0V, Tj = 25°C
—
—
2.60
3.10
140
20.0
7.6
13.2
2.30
1.85
—
—
540
—
—
580
—
420
220
5.5 6.5
Jul. 2005
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
Junction to Case, IGBT part
Junction to Case, FWDi part
Case to Fin, λgrease = 1W/m·K
K/kW
K/kW
K/kW
Thermal resistance
Contact thermal resistance
Min Typ Max
10.0
17.0
—
—
—
8.0
—
—
—
THERMAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
M
—
CTI
d
a
d
s
L
C-E(int)
M8 : Main terminals screw
M6 : Mounting screw
M4 : Auxiliary terminals screw
IGBT part
N·m
kg
—
mm
mm
nH
Mounting torque
Mass
Comparative tracking index
Clearance distance in air
Creepage distance along surface
Internal inductance
Min Typ Max
13.0
6.0
2.0
—
—
—
—
—
—
—
—
1.0
—
—
—
18
7.0
3.0
1.0
—
600
10.0
15.0
—
MECHANICAL CHARACTERISTICS
Symbol Item Conditions Limits Unit
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
EMITTER-COLLECTOR VOLTAGE (V)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
2000
2400
2800
3200
1600
1200
800
400
03421056
2000
2400
2800
3200
1600
1200
800
400
0684201012
5
4
3
2
1
0240016008000 3200
5
4
3
2
1
0240016008000 3200
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
V
CE
= 10V
T
j
= 25°C V
GE
= 15V
V
GE
= 10V
V
GE
= 8V
V
GE
= 12V
V
GE
= 20V
V
GE
= 15V
Jul. 2005
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
CAPACITANCE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
CAPACITANCE (nF)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
GATE CHARGE (µC)
GATE-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
GATE RESISTANCE (Ω)
SWITCHING ENERGIES (mJ/pulse)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
20
16
12
8
4
08 1240 16 20
2000
1600
1200
800
400
0240016008000 3200
2000
2400
1600
1200
800
400
06 8420 10 12
10
2
10
3
10
1
10
0
10
0
10
-1
23 57
10
1
10
2
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
E
on
E
off
E
rec
E
off
C
ies
C
oes
C
res
V
CC
= 850V, I
C
= 1600A
V
GE
= ±15V
T
j
= 125°C, Inductive load
V
CC
= 850V, V
GE
= ±15V
R
G(on)
= R
G(off)
= 1.6Ω
T
j
= 125°C, Inductive load
E
on
V
GE
= 0V, T
j
= 25°C
f = 100kHz
V
CC
= 850V, I
C
= 1600A
T
j
= 25°C
E
rec
Jul. 2005
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
COLLECTOR CURRENT (A)
SWITCHING TIMES (µs)
REVERSE RECOVERY CURRENT (A)
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
EMITTER CURRENT (A)
REVERSE RECOVERY TIME (µs)
FREE-WHEEL DIODE
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER VOLTAGE (V)
COLLECTOR CURRENT (A)
REVERSE BIAS SAFE OPERATING AREA
(RBSOA)
5000
4000
3000
2000
1000
0150010005000 2000
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
10
0
10
1
10
-1
10
-2
10
2
10
1
23 57 10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
10
3
10
4
10
2
10
1
10
1
10
2
10
0
10
-1
10
2
10
1
23 57 10
3
10
4
23 57 23 57
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
23 57
1.2
1.0
0.8
0.6
0.4
0
10
-2
10
-1
10
-3
10
0
10
1
0.2
23 57 23 57 23 57
VCC ≤ 1150V, VGE = +/-15V
Tj = 125°C, RG(off) ≥ 1.6Ω
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 1.6Ω
Tj = 125°C, Inductive load
VCC = 850V, VGE = ±15V
RG(on) = RG(off) = 1.6Ω
Tj = 125°C, Inductive load
lrr
trr
td(off)
td(on)
tf
tr
Single Pulse, TC = 25°C
Rth(j–c)Q = 10K/kW
Rth(j–c)R = 17K/kW
