
Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR 2N5401
(9AW)
TO-92
CBE
MARKING: CD
5401
Hi
h Volta
e PNP Transistor For General Pur
ose And Tele
hon
A
lications.
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION SYMBOL VALUE UNIT
Collector -Emitter Voltage VCEO 150 V
Collector -Base Voltage VCBO 160 V
Emitter -Base Voltage VEBO 5.0 V
Collector Current Continuous IC 600 mA
Power Dissipation @Ta=25 degC PD 625 mW
Derate Above 25 deg C 5.0 mw/deg C
Power Dissipation @Tc=25 degC PD 1.5 W
Derate Above 25 deg C 12 mw/deg C
Junction Temperature Tj 150 deg C
Storage Temperature Tstg -55 to +150 deg C
THERMAL RESISTANCE
Junction to Case Rth(j-c) 83.3 deg C/W
Junction to Ambient Rth(j-a) 200 deg C/W
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector -Emitter Voltage VCEO* IC=1uA,IB=0 150 - - V
Collector -Base Voltage VCBO IC=100uA.IE=0 160 - - V
Emitter -Base Voltage VEBO IE=10uA, IC=-0 5.0 - - V
Collector-Cut off Current ICBO VCB=160V, IE=0 - - 50 nA
Ta=100 deg C
VCB=160V, IE=0 - - 50 uA
ICEO VCE=150V, IB=0 1.0 uA
Emitter-Cut off Current IEBO VEB=4V, IC=0 - - 50 nA
DC Current Gain hFE* IC=1mA,VCE=5V 50 - -
IC=10mA,VCE=5V 80 - 320
IC=50mA,VCE=5V 50 - -
IS/ISO 9002
Lic# QSC/L- 000019.2
IS / IEC QC 700000
IS / IEC QC 750100
Continental Device India Limited Data Sheet Page 1 of 3