PolarHVTM HiPerFET Power MOSFET IXFN 44N80P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M 800 800 V V VGS VGSM Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, pulse width limited by TJM 39 100 A A IAR EAR EAS TC = 25C TC = 25C TC = 25C 22 80 3.4 A mJ J dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 10 V/ns PD TC = 25C 694 W -55 ... +150 150 -55 ... +150 C C C 300 C 2500 3000 V~ V~ TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s VISOL 50/60 Hz, RMS, 1 minute IISOL < 1 mA, 10 seconds Md Mounting torque Terminal torque 1.13/10 Nm/lb.in. 1.13/10 Nm/lb.in. Weight 30 Symbol Test Conditions (TJ = 25C unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 800 A 800 VGS(th) VDS = VGS, ID = 8 mA 3.0 IGSS VGS = 30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) g V 5.0 V 200 nA 50 1.5 A mA 190 m TJ = 125C VGS = 10 V, ID = 0.5 ITD25, Note 1 = 800 V = 39 A 190 m 250 ns miniBLOC, SOT-227 B (IXFN) E153432 S G S G = Gate S = Source D D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features * International standard package * Encapsulating epoxy meets UL 94 V-0, flammability classification * miniBLOC with Aluminium nitride isolation * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance * Fast intrinsic Rectifier Applications * DC-DC converters * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * Temperature and lighting controls * Low voltage relays Advantages * Easy to mount * Space savings * High power density DS99503E(06/06) (c) 2006 IXYS All rights reserved http://store.iiic.cc/ IXFN 44N80P Symbol gfs Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. VDS= 20 V; ID = 0.5 ID25, Note 1 27 Ciss 43 S 12 nF 910 pF Crss 30 pF td(on) 28 ns Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 1 (External) 75 ns 27 ns 200 nC 67 nC 65 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd SOT-227B (IXFN) Outline (M4 screws (4x) supplied) 0.18 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 44 A ISM Repetitive 100 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr IF = 22 A, -di/dt = 100 A/s 250 ns QRM VR = 100 V, VGS = 0 V IRM 0.8 C 8.0 A Notes: 1. Pulse test, t 300 s, duty cycle d 2% IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2 IXFN 44N80P Fig. 1. Output Characte r is tics Fig. 2. Exte nde d Output Characte ris tics @ 25 C @ 25 C 100 45 V GS = 10V 40 7V 80 35 70 6V 30 I D - Amperes I D - Amperes V GS = 10V 90 7V 25 20 15 5V 60 6V 50 40 30 10 20 5 10 5V 0 0 0 1 2 3 4 5 6 7 0 8 3 6 9 V D S - V olts 15 18 21 24 27 30 V D S - V olts Fig. 3. Output Characte r is tics Fig. 4. RDS(on ) Nor m alize d to ID = 22A V alue vs . Junction Te m pe rature @ 125 C 2.6 45 V GS = 10V 40 2.4 V GS = 10V 7V R D S ( o n ) - Normalized 35 6V I D - Amperes 12 30 25 20 5V 15 10 5 2.2 2.0 1.8 I D = 44A 1.6 I D = 22A 1.4 1.2 1.0 0.8 0.6 0 0 2 4 6 8 10 12 14 -50 16 -25 V D S - V olts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Nor m alize d to ID = 22A V alue vs . Drain Curr e nt Fig . 6. Dr ain Cu r r e n t vs . Cas e T e m p e r atu r e 44 2.4 V GS = 10V 2.2 40 TJ = 125 C 32 I D - Amperes R D S ( o n ) - Normalized 36 2 1.8 1.6 1.4 28 24 20 16 12 1.2 TJ = 25 C 8 1 4 0 0.8 0 10 20 30 40 50 60 70 80 90 100 -50 -25 0 25 50 75 100 TC - Degrees Centigrade I D - A mperes (c) 2006 IXYS All rights reserved http://store.iiic.cc/ 125 150 IXFN 44N80P Fig. 8. Trans conductance Fig. 7. Input Adm ittance 90 70 80 60 TJ = - 40 C 70 40 25 C 20 125 C 50 40 fs - 40 C 30 25 C 60 - Siemens TJ = 125 C 30 g I D - Amperes 50 20 10 10 0 0 3.5 4 4.5 5 5.5 6 0 6.5 10 20 30 V G S - V olts Fig. 9. Sour ce Cur re nt vs . Sour ce -To-Drain V oltage 50 60 70 80 150 175 200 Fig. 10. Gate Charge 10 140 9 V DS = 400V 8 I D = 22A 7 I G = 10m A 120 V G S - Volts 100 I S - Amperes 40 I D - A mperes 80 60 40 6 5 4 3 TJ = 125 C 2 TJ = 25 C 20 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 0 V S D - V olts 25 50 75 Q G 100 125 - NanoCoulombs Fig . 12. M axim u m T r an s ie n t T h e r m al Re s is tan ce Fig. 11. Capacitance 1. 00 100000 f = 1MH z 10000 R( t h ) J C - C / W Capacitance - PicoFarads C is s C os s 1000 100 0. 10 C rss 10 0. 01 0 5 10 15 20 25 30 35 40 0. 001 0. 01 0.1 Puls e Width - Sec onds V DS - V olts IXYS reserves the right to change limits, test conditions, and dimensions. http://store.iiic.cc/ 1 10