2SA1015-O
PNP Silicon
Plastic-Encapsulate
Transistor
Features
• Capable of 0.4Watts of Power Dissipation.
• Collector-current: -0.15A
• Collector-base Voltage: -50V
• Operating and storage junction temperature range: -55OC to +125OC
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
(I
C=-0.1mAdc, IB=0)
-50 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=-100uAdc, IE=0)
-50 --- Vdc
I
CBO Collector Cutoff Current
(VCB= - 50Vdc, IE=0)
--- -0.1 uAdc
IEBO Emitter Cutoff Current
(VEB= - 5.0Vdc, IC=0)
--- -0.1 uAdc
ON CHARACTERISTICS
hFE DC Current Gain
(IC=-2.0mAdc, VCE= - 6.0Vdc)
70 400 ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=-100mAdc, IB=-10mAdc)
--- -0.3 Vdc
VBE(sat) Base-Emitter Saturation Voltage
(I
C=-100mAdc, IB=-10mAdc)
--- -1.1 Vdc
SMALL-SIGNAL CHARACTERISTICS
fTTransistor Frequency
(IC=-1.0mAdc, VCE=-10Vdc, f=30MHz) 80 MHz
CLASSIFICATION OF HFE (1)
Rank O Y GR
Range 70-140 120-240 200-400
---
Revision: I 2013/04/02
omponents
20736 Marilla Street Chatsworth
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MCC TM
Micro Commercial Components
www.mccsemi.com
1 of 3
2SA1015-Y
2SA1015-GR
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
• Marking:A1015
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
V(BR)EBO
Emitter-Base Breakdown Voltage
(I
E=-100uAdc, IC=0)
-5 --- Vdc
COB Collector Output Capacitance
(VCB=-10Vdc, I E=0,f=1MHz)
--- 7.0 pF
NF Noise Figure
(VCE=-6Vdc, IC=-0.1mAdc,f=1KHz,Rg=10K)
--- 6.0 dB
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .175 .185 4.45 4.70
B .175 .185 4.45 4.70
C .500 --- 12.70 ---
D .016 .020 0.41 0.63
E .135 .145 3.43 3.68
.095.1052.422.67 Straight Lead
AE
B
C
D
G
ECB
ECB
BENT LEADSTRAIGHT LEAD
BULK PACK AMMO PACK
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
.173.2204.405.60 Bent Lead
G
TO-92
DIMENSIONS
Halogen free available upon request by adding suffix "-HF"
•