IXFA4N100P IXFP4N100P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 1000V = 4A 3.3 TO-263 AA (IXFA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C, RGS = 1M 1000 V G VGSS Continuous 20 V VGSM Transient 30 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 4 8 A A IA TC = 25C 4 A EAS TC = 25C 200 mJ dv/dt IS IDM, VDD VDSS, TJ 150C 10 V/ns PD TC = 25C 150 W -55 ... +150 C TJ TJM 150 C Tstg -55 ... +150 C 300 260 C C 10.65 / 2.2..14.6 1.13 / 10 Nm/lb.in. Nm/lb.in. 2.5 3.0 g g TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds FC Md Mounting Force (TO-263) Mounting Torque (TO-220) Weight TO-263 TO-220 S D (Tab) TO-220AB (IXFP) G DS G = Gate S = Source D (Tab) D = Drain Tab = Drain Features z z z z z International Standard Packages Low RDS(on) and QG Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier Advantages z Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 1000 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V z VGS = 10V, ID = 0.5 * ID25, Notes 1 High Power Density Easy to Mount Space Savings V 6.0 V 100 nA 10 A 750 A TJ = 125C RDS(on) z 3.3 Applications z z z z z Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS99921A(7/10) (c) 2010 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ IXFA4N100P IXFP4N100P Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs VDS= 20V, ID = 0.5 * ID25, Note 1 1.8 RGi Gate Input Resistance Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 5 (External) Qg(on) Qgs VGS= 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 3.0 S 1.6 1456 pF 90 pF 16 pF 24 ns 36 ns 37 ns 50 ns 26 nC 9 nC 12 nC Pins: 1 - Gate 2 - Drain 0.83 C/W RthJC RthCS TO-220 (IXFP) Outline TO-220 C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS VGS = 0V ISM VSD trr IRM QRM Characteristic Values Min. Typ. Max. 4 A Repetitive, Pulse Width Limited by TJM 16 A IF = IS, VGS = 0V, Note 1 1.3 V 300 ns IF = 2A, VGS = 0V, -di/dt = 100A/s VR = 100V 5.30 A 0.34 C TO-263 (IXFA) Outline Note 1: Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 http://store.iiic.cc/ 6,404,065B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734B2 6,759,692 7,063,975B2 6,771,478B2 7,071,537 7,157,338B2 IXFA4N100P IXFP4N100P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 4 8 VGS = 10V 8V 7V 3.5 3 6 ID - Amperes ID - Amperes VGS = 10V 8V 7 2.5 6V 2 1.5 7V 5 4 6V 3 2 1 5V 0.5 1 5V 0 0 0 1 2 3 4 5 6 7 8 9 10 11 0 12 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125C Fig. 4. RDS(on) Normalized to ID = 2A Value vs. Junction Temperature 35 3.0 4 VGS = 10V 7V 3.6 VGS = 10V 2.6 R DS(on) - Normalized 3.2 ID - Amperes 2.8 6V 2.4 2 1.6 1.2 0.8 5V I D = 4A 2.2 I D = 2A 1.8 1.4 1.0 0.6 0.4 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 -50 -25 0 Fig. 5. RDS(on) Normalized to ID = 2A Value vs. Drain Current 50 75 100 125 150 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 4.5 VGS = 10V 2.4 4 TJ = 125C 2.2 3.5 2.0 3 ID - Amperes R DS(on) - Normalized 25 TJ - Degrees Centigrade VDS - Volts 1.8 1.6 1.4 2.5 2 1.5 1.2 1 TJ = 25C 1.0 0.5 0.8 0 0 1 2 3 4 5 6 7 8 -50 ID - Amperes -25 0 25 50 75 TC - Degrees Centigrade (c) 2010 IXYS CORPORATION, All Rights Reserved http://store.iiic.cc/ 100 IXFA4N100P IXFP4N100P Fig. 7. Input Admittance 5 4.5 4.5 4 4 3.5 3 TJ = - 40C 25C 3.5 TJ = 125C 25C - 40C g f s - Siemens ID - Amperes Fig. 8. Transconductance 5 2.5 2 3 125C 2.5 2 1.5 1.5 1 1 0.5 0.5 0 0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0 7.0 0.5 1 1.5 2 VGS - Volts 2.5 3 3.5 4 4.5 5 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 12 16 VDS = 500V 14 I D = 2A 10 I G = 10mA 12 VGS - Volts IS - Amperes 8 6 4 10 8 6 TJ = 125C 4 TJ = 25C 2 2 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 1.1 5 10 15 VSD - Volts 20 25 30 35 40 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 10,000 1 Ciss 1,000 Z (th)JC - C / W Capacitance - PicoFarads f = 1 MHz Coss 0.1 100 Crss 10 0 5 10 15 20 25 30 35 40 0.01 0.00001 VDS - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: F_4N100P(45-744)10-08-08 http://store.iiic.cc/